Applied Materials, Inc.

Varian Semiconductor Equipment Associates, Inc.

Christopher Dennis Bencher

Joseph R Johnson

Thomas L Laidig

Christopher S Ngai

Bok Hoen Kim

Huixiong Dai

Yuxiang May Wang

Ian Scot Latchford

Sudha S Rathi

Ludovic Godet

Timothy Weidman

Judy H Huang

Peng Xie

Li Yan Miao

Mehdi Vaez-Iravani

Robert Jan Visser

Wendy H Yeh

Michael Robert Rice

Hichem M'Saad

Kevin P Fairbairn

Vijay Parihar

Bencherki Mebarki

Mario Dave Silvetti

Sang H Ahn

John M White

Li-Qun Xia

Mehul B Naik

Deenesh Padhi

Pramit Manna

Manivannan Thothadri

Daniel Lee Diehl

Joe Feng

Srinivas D Nemani

Ellie Y Yieh

Hou Tee Ng

Wei Liu

Steven Verhaverbeke

Gilad Almogy

Nag B Patibandla

Guoheng Zhao

Jang Fung Chen

David A Markle

Keiji Horioka

Mingwei Zhu

Yong Cao

Roman Gouk

Hwan J Jeong

Mei-Yee Shek

Peter I Porshnev

Martin A Hilkene

Weimin Zeng

Jian Ding

Byung Sung Kwak

Matthew D Scotney-Castle

Tingjun Xu

Melvin Warren Montgomery

Yongmei Chen

Jen Shu

Lisong Xu

Uwe Hollerbach

Michael S Barnes

Joseph C Olson

Thorsten B Lill

Majeed Foad

Mihaela A Balseanu

Young Seen Lee

Benjamin Colombeau

Zhenjiang Cui

Hao Chen

Meihua Shen

Hui W Chen

Michael D Armacost

Arulkumar P Shanmugasundram

Derek R Witty

Hongching Shan

Lee Luo

Jeffrey C Munro

Tristan Yonghui Ma

Claes H Bjorkman

Raymond Hoiman Hung

Wayne McMillan

Yaxin Wang

Christopher G Talbot

Naushad K Variam

Yongan Xu

Kenny Linh Doan

Adam Brand

Ping Xu

Jing Tang

Victor Nguyen

Jingbao Liu

Hongbin Fang

Mandar Balasaheb Pandit

Michael Duane

Timothy B Michaelson

David S L Mui

Albert Sanghyup Lee

Subhash Deshmukh

Kevin Laughton Cunningham

Naamah Argaman

A digital lithography system may adjust a wavelength of the light source to compensate for tilt errors in micromirrors while maintaining a perpendicular direction for the reflected light. Adjacent pixels may have a phase shift that is determined by an optical path difference between their respective light beams. This phase shift may be preselected to be any value by generating a corresponding wavelength at the light source based on the optical path difference. To generate a specific wavelength corresponding to the desired phase shift, the light source may produce multiple light components that have wavelengths that bracket the wavelength of the selected phase shift. The intensities of these components may then be controlled individually to produce an effect that approximates the selected phase shift on the substrate.

Controlling light source wavelengths for selectable phase shifts between pixels in digital lithography systems

A display screen includes a backplane, an array of light-emitting diodes electrically integrated with the backplane, the array of light-emitting diodes configured to emit UV light in a first wavelength range, and a plurality of isolation walls formed on the backplane between adjacent light-emitting diodes of the array of light-emitting diodes with the isolation walls spaced apart from the light-emitting diodes and extending above the light-emitting diodes. The plurality of isolation walls include a core of a first material and a coating covering at least a portion of the core extending above the light-emitting diodes. The coating is an opaque second material having transmittance less than 1% of light in the first wavelength range.

Micro-LED displays to reduce subpixel crosstalk

A method for manufacturing micro-LED displays includes depositing a first material over a substrate having a plurality of micro-LEDs such that the plurality of micro-LEDs are covered by the first material and the first material fills gaps laterally separating the micro-LEDs, removing a portion of the first material from the gaps that laterally separate the plurality of micro-LEDs to form trenches that extend to or below light-emitting layers of the micro-LEDs, depositing a second material over the substrate such that the second material covers the first material and extends into the trenches, and removing a portion of the first and second material over the plurality of micro-LEDs to expose top surfaces of the plurality of micro-LEDs and such that isolation walls positioned in the gaps between the plurality of micro-LEDs extend vertically higher than the top surface of the first material.

Manufacturing micro-LED displays to reduce subpixel crosstalk

The present disclosure provides methods and systems for correcting the shooting of images from a spatial light modulator (SLM) to a substrate, when cross-scan vibrations, including sub-pixel cross-scan vibrations, are present. The methods and systems include shifting a mask pattern on an SLM rotated relative to the in-scan direction of travel on a substrate, shifting along an axis of the SLM to correct for cross-scan vibrations, and either delaying, or accelerating, the shooting of the mask pattern onto the substrate.

Image stabilization for digital lithography

Examples described herein provide a system, a software application, and a method of a lithography process to write multiple tones in a single pass. A system includes a stage and a lithography system. The lithography system includes image projection systems, a controller, and memory. The controller is coupled to the memory, which stores instruction code. Execution of the instruction code by the controller causes the controller to control the stage and the image projection systems to iteratively expose a photoresist supported by the stage and to move the stage relative to the image projection systems a step distance between sequential pairs of the exposures. Each exposure includes using write beam(s) projected from the image projection systems. Each exposure is at a respective one of different dosage amounts. An accumulation of the different dosage amounts is a full tone dosage amount for the photoresist.

Multi-tone scheme for maskless lithography

Embodiments of the present disclosure include a lithography apparatus, patterning system, and method of patterning a layered structure. The patterning system includes an image formation device and a reactive layer. The patterning system allows for creating lithography patterns in a single operation. The lithography apparatus includes the patterning system and an optical system. The lithography apparatus uses a plurality of wavelengths of light, along with the image formation device, to create a plurality of color patterns on the reactive layer. The method of patterning includes exposing the reactive layer to a plurality of wavelengths of light. The light reacts differently with different regions of the reactive layer, depending on the wavelength of light emitted onto the different regions. The method and apparatuses disclosed herein require only one image formation device and one lithography operation.

Lithography apparatus, patterning system, and method of patterning a layered structure

Methods, systems and apparatus for decreasing total distortion of a maskless lithography process are disclosed. Some embodiments provide methods, systems and apparatus for decreasing total distortion without physical modification of the apparatus.

Decreasing distortion by modifying pixel spacing

Methods for patterning a substrate are described. A substrate is scanned using a spatial light modulator with a plurality of exposures timed according to a non-crystalline shot pattern. Lithography systems for performing the substrate patterning method and non-transitory computer-readable medium for executing the patterning method are also described.

Method to achieve non-crystalline evenly distributed shot pattern for digital lithography

The present disclosure generally relates to methods and systems for manufacturing wire grid polarizers (WGP) using Markle-Dyson exposure systems and dual tone development (DTD) frequency doubling. In one embodiment, the method includes depositing a photoresist layer over an aluminum-coated display substrate, patterning the photoresist layer by dual tone development using a Markle-Dyson system to form a photoresist pattern, and transferring the photoresist pattern into the aluminum-coated display substrate to manufacture a WGP having finer pitch, for example less than or equal to about 100 nm, and increased frequency.

Wire grid polarizer manufacturing methods using frequency doubling interference lithography

A method of method of operating a multibeamlet charged particle device is disclosed. In the method, a target attached to a stage is translated, and each step of selecting beamlets, initializing beamlets, and exposing the target is repeated. The step of selecting beamlets includes passing a reconfigurable plurality of selected beamlets through the blanking circuit. The step of initializing beamlets includes pointing each of the selected beamlets in an initial direction. The step of exposing the target includes scanning each of the selected beamlets from the initial direction to a final direction, and irradiating a plurality of regions of the target on the stage with the selected beamlets.

Multibeamlet charged particle device and method

Embodiments of the present disclosure relate to methods for positioning masks in a propagation direction of a light source. The masks correspond to a pattern to be written into a photoresist layer of a substrate. The masks are positioned by stitching a first mask and a second mask. The first mask includes a set of first features having first feature extensions extending therefrom at first feature interfaces. The second mask includes a set of second features having second feature extensions extending therefrom at second feature interfaces. Each first feature extension stitches with each corresponding second feature extension to form each stitched portion of a first stitched portion of the first pair of masks. The stitched portion of the first pair of masks defines a portion of the pattern to be written into the photoresist layer.

System, software application, and method for lithography stitching

Embodiments herein describe a sub-micron 3D diffractive optics element and a method for forming the sub-micron 3D diffractive optics element. In a first embodiment, a method is provided for forming a sub-micron 3D diffractive optics element on a substrate without planarization. The method includes depositing a material stack to be patterned on a substrate, depositing and patterning a thick mask material on a portion of the material stack, etching the material stack down one level, trimming a side portion of the thick mask material, etching the material stack down one more level, repeating trim and etch steps above 'n' times, and stripping the thick mask material from the material stack.

Method of building a 3D functional optical material layer stacking structure

Embodiments of the present disclosure provide improved photolithography systems and methods using a solid state emitter device. The solid state emitter device includes an array of solid state emitters arranged in a plurality of horizontal rows and vertical columns. The variable intensity of each group of solid state emitters, for example an entire row or column of solid state emitters, is controllable for improved field brightness uniformity and stitching. Controlling the variable intensity includes, for example, varying the signal, such as voltage, that is applied to each of the rows of solid state emitters to attenuate the brightness from the middle of the array to the edges of the array to accommodate for overlapping exposures during photolithography processing.

Systems and methods of using solid state emitter arrays

Embodiments described herein provide a system, a software application, and a method of a lithography process, to write full tone portions and grey tone portions in a single pass. One embodiment includes a controller configured to provide mask pattern data to a lithography system. The controller is configured to divide a plurality of spatial light modulator pixels spatially by at least a grey tone group and a full tone group of spatial light modulator pixels. When divided by the controller, the grey tone group of spatial light modulator pixels is operable to project a first number of the multiplicity of shots to the plurality of full tone exposure polygons and the plurality of grey tone exposure polygons, and the full tone group of spatial light modulator pixels is operable to project a second number of the multiplicity of shots to the plurality of full tone exposure polygons.

Half tone scheme for maskless lithography

Growing community of inventors

Cupertino, CA, United States of America

Christopher Dennis Bencher