Xerox Corporation

Unaxis USA Inc.

Sandia Corporation

Christopher Constantine

Russell Westerman

Daniel E Kuhman

Kevin N Beatty

David J Johnson

Randy J Shul

Jason Plumhoff

The present invention provides a method and an apparatus for etching a photolithographic substrate. The photolithographic substrate is placed on a support member in a vacuum chamber. A processing gas for etching a material from the photolithographic substrate is introduced into the vacuum chamber, and a plasma is generated. An RF bias is supplied to the support member in the vacuum chamber through an RF bias frequency generator at or below the ion transit frequency. Exposed material is etched from the photolithographic substrate with improved CD Etch Linearity and CD Etch Bias since the low frequency bias allows the developed charge on the photolithographic substrate, generated by the plasma, to dissipate.

Etching of chromium layers on photomasks utilizing high density plasma and low frequency RF bias

An embedded attenuated phase shift mask (&ldquo;EAPSM&rdquo;) includes an etch stop layer that can be plasma etched in a process that is highly selective to the underlying quartz substrate. Selectivity to the underlying quartz maintains a desired 180 degree phase shift uniformly across the active mask area. Conventional plasma etching techniques can be utilized without damage to the underlying quartz substrate. Alternatively, the etch stop layer comprises a transparent material that can remain intact in the mask structure.

Embedded attenuated phase shift mask and method of making embedded attenuated phase shift mask

A thermal ink jet printhead contains, on a front face, a remote plasma deposited fluoropolymer film. The fluoropolymer film has a high fluorine to carbon ratio. The film also possesses excellent mechanical durability. The film may be prepared by forming a remote plasma from precursor gases containing flurocarbons and depositing from the remote plasma onto a front face of a thermal ink jet printhead

Method for remote plasma deposition of fluoropolymer films

A thermal ink jet printhead contains, on a front face, a remote plasma deposited fluoropolymer film. The fluoropolymer film has a high fluorine to carbon ratio. The film also possesses excellent mechanical durability. The film may be prepared by forming a remote plasma from precursor gases containing fluorocarbons and depositing from the remote plasma onto a front face of a thermal ink jet printhead.

High density remote plasma deposited fluoropolymer films

A dry etching method. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators.

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Safety Harbor, FL, United States of America

Christopher Constantine