Unaxis-balzers Aktiengesellschaft

Oc Oerlikon Balzers Ag

Sulzer Metco Ag

Oerlikon Trading Ag, Trubbach

Tel Solar Ag

Oerlikon Metco Ag, Wohlen

Christoph Hollenstein

Jacques Schmitt

Ulrich Kroll

Markus Poppeller

Juliette Ballutaud

Alan Howling

Jean-Luc Dorier

Gérard Barbezat

Mauro Pedrazzini

Johann Karner

Gerard Barbezat

Malko Gindrat

Arno Refke

Philippe Guittienne

David Franz

Cedric Bucher

Cédric Bucher

Dr Jean-Luc Dorier

The invention relates to a plasma spraying device () for spraying a coating () onto a substrate () by a thermal spray process. Said plasma spraying device () includes a plasma torch () for heating up a plasma gas () in a heating zone (), wherein the plasma torch () includes a nozzle body () for forming a plasma gas stream (), and said plasma torch () has an aperture () running along a central longitudinal axis () through said nozzle body (). The aperture () has an convergent section () with an inlet () for the plasma gas (), a throat section () including a minimum cross-sectional area of the aperture, and a divergent section () with an outlet () for the plasma gas stream (), wherein an introducing duct () is provided for introducing a liquid precursor () into the plasma gas stream (). According to the invention a penetration means () is provided to penetrate the liquid precursor () inside the plasma gas stream (). The invention relates also to a method for introducing a liquid precursor () into a plasma gas stream () as well as to the use of a plasma spraying device () and a method in accordance with the present invention for coating a surface of a substrate ().

Plasma spraying device and a method for introducing a liquid precursor into a plasma gas stream

A semi-conducting device has at least one layer doped with a doping agent and a layer of another type deposited on the doped layer in a single reaction chamber. An operation for avoiding the contamination of the other layer by the doping agent separates the steps of depositing each of the layers.

Method for producing semi-conducting devices and devices obtained with this method

Method for coating workpieces generates a beam of a plasma in an evacuated container. A region of highest plasma density is at the beam axis and workpieces having surfaces to be coated, are radially offset from, and extend along the axis with the surfaces facing the axis and being in the container. Fresh reactive gas is inlet into the container and consumed gas is removed from the container. Coating material is deposited upon the surfaces with a deposition rate of at least 400 nm/min and at a maximum temperature of the surfaces being 550&deg; C.

Coating workpiece method using beam of plasma

Growing community of inventors

Lutry, Switzerland

Christoph Hollenstein