L'air Liquide,societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude

Safran Ceramics

Christian Dussarrat

Jean-Marc Girard

Venkateswara R Pallem

Masahiro Suzuki

Nicolas Blasco

Julien Gatineau

Satoko Gatineau

Kazutaka Yanagita

Glenn Kuchenbeiser

Audrey Pinchart

Christophe Lachaud

Mikiko Kimura

Stefan Wiese

Sunao Kamimura

Antoine Bruneau

Sanghoon Kim

Keishi Yamamoto

Masato Hirai

Vincent Duplan

Yumi Ikeda

Tomohiro Seki

Grigory Nikiforov

A genus of rare earth containing chemicals is disclosed. These rare earth containing chemicals are suitable for use in sequential vapor deposition processes to form rare earth fluoride or rare earth oxyfluoride films. Such films may be used to protect materials and devices from corrosive chemicals.

Devices having a rare earth (oxy) fluoride coating for improved resistance to corrosive chemical environments and methods for making and using these devices

This invention provides a novel solution to form an artificial interphase on the electrode to protect it from fast declining electrochemical behaviors, by depositing Metal Oxides Layer, by ALD or CVD. Metals discussed here are IVA-VIA elements (Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W). The film needs to be thin, possibly discontinuous, and lithium ion conductive enough, so that the addition of this thin film interface allows fast lithium ion transfer at the interface between electrode and electrolyte.

Processes for forming metal oxide thin films on electrode interphase control

A process for forming an indium-containing film on at least part of the surface of a substrate, the process comprising (a) placing a substrate into a chamber; (b) introducing a vapor that includes an indium-containing compound into the chamber; (c) purging the chamber with a first purge gas; (d) introducing an oxygen-containing gas into the chamber; and (e) purging the chamber with a second purge gas; and (f) repeating steps (b)-(e) at a temperature of ≥225° C. and ≤400° C. until a desired thickness of the indium-containing film is obtained.

Indium compound and method for forming indium-containing film using said indium compounds

Methods for forming a Li-containing film, islet or cluster on a substrate comprise the steps of introducing a vapor of a silicon-free lithium precursor into a reactor and depositing at least part of the silicon-free lithium precursor onto the substrate to form the Li-containing film, islet or cluster using a vapor deposition method.

Lithium precursors for deposition of lithium-containing layers, islets or clusters

The present invention provides a compound having a low melting point, enhanced volatility, and excellent thermal stability, and a method for producing a lithium-containing film. The compound is represented by the following formula (1). (In the formula (1), A is a nitrogen atom, a phosphorus atom, a boron atom, or an aluminum atom;

Compound and method for producing lithium-containing film

The lanthanoid compound according to the present invention is a compound represented by the following general formula Ln(RCp)(A)or the following general formula Sm(RCp)(A). In Ln(RCp)(A), Ln is Nd, Eu, Dy, Tm, or Yb, Ris independently Me, Et,Pr,Pr,Bt,Bu,Bu, orAm, Cp is cyclopentadienyl, A is a linear or cyclic hydrocarbon containing oxygen, sulfur, phosphorus, or nitrogen, x is an integer of 2 to 3, and y is 0 to 2. In Sm(RCp)(A), Ris independentlyPr,Pr,Bt,Bu,Bu, orAm.

Lanthanoid compound, lanthanoid-containing thin film and formation of lanthanoid-containing thin film using the lanthanoid compound

Methods for forming an Indium-containing film by a vapor deposition method using a heteroalkylcyclopentadienyl Indium (I) precursor having a general formula:In[RRRRCpL] orIn[CpLL]wherein Cp represents a cyclopentadienyl ligand; Rto Rare each independently H, C-Clinear, branched or cyclic alkyls; Land Lare each independently a substituent bonded to the Cp ligand and consisting of an alkyl chain containing at least one heteroatom, such as Si, Ge, Sn, N, P, B, Al, Ga, In, O, S, Se, Te, F, Cl, Br, I; and y=1-4. Examplary heteroalkylcyclopentadienyl Indium (I) precursors include In(Cp(CH)NMe) or In(CpPiPr).

Heteroalkylcyclopentadienyl indium-containing precursors and processes of using the same for deposition of indium-containing layers

Pentakis(dimethylamino) disilane with general formula (1): Si2(NMe2)5Y, where Y is selected from the group comprising H, Cl or an amino group its preparation method and its use to manufacture gate dielectric films or etch-stop dielectric films of SiN or SiON.

Pentakis(dimethylamino) disilane precursor comprising compound and method for the preparation thereof

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Tokyo, Japan

Christian Dussarrat