L'air Liquide, Soci&#xe9;t&#xe9; Anonyme Pour L'etude Et L'exploitation Des Proc&#xe9;d&#xe9;s Georges Claude

American Air Liquide, Inc.

L'air Liquide, Societe Anonyme a Directoire Et Conseil De Surveillance Pour L'etude Et L'exploitation Des Procedes Georges Claude

Air Liquide Electronics U.S. LP

Applied Materials, Inc.

Tokyo Electron Limited

Centre National De La Recherche Scientifique

Christian Dussarrat

Venkateswara R Pallem

Vincent M Omarjee

Jean-Marc Girard

Nicolas Blasco

Julien Gatineau

Nathan Stafford

Clément Lansalot-Matras

Julien Lieffrig

Curtis Anderson

Clement Lansalot-Matras

Rahul Gupta

Audrey Pinchart

Christophe Lachaud

Glenn Kuchenbeiser

Kazutaka Yanagita

Hana Ishii

Antoine Colas

Jong Min Kim

Wontae Noh

Satoko Gatineau

Peng Shen

Takako Kimura

Eri Tsukada

Benjamin J Feist

James J F McAndrew

Ikuo Suzuki

Olivier Letessier

Cheng-Fang Hsiao

David P Thompson

Robert Daniel Clark

Jeffrey W Anthis

Yuusuke Sato

Ziyun Wang

Ravi Kumar Laxman

Ashutosh Misra

Benjamin Jurcik

Naoki Tamaoki

Benjamin J Jurcik, Jr

Matthew L Fisher

Andrey V Korolev

Steven Consiglio

Andreas Zauner

Mikiko Kimura

Tsuyoshi Saito

Brian Besancon

Venkat Pallem

Asli Ertan

Dmitri Znamensky

Takeshi Hoshi

François Doniat

Stéphane Danielle

Nicolas Merle

Paul Jantzen

James J F Mcandrew

Disclosed are Group 6 film forming compositions comprising Group 6 transition metal-containing precursors selected from the group consisting of:M(=O)(OR)&#x2003;&#x2003;Formula I,M(=O)(NR)&#x2003;&#x2003;Formula II,M(=O)(NR)&#x2003;&#x2003;Formula III,M(=NR)(OR)&#x2003;&#x2003;Formula IV, andM(=O)(OR)&#x2003;&#x2003;Formula V,wherein M is Mo or W and each R is independently H, a C1 to C6 alkyl group, or SiR', wherein R&#x2032; is H or a C1 to C6 alkyl group. Also disclosed are methods of synthesizing and using the disclosed compositions to deposit Group 6 transition metal-containing films on substrates via vapor deposition processes.

Group 6 transition metal-containing compounds for vapor deposition of group 6 transition metal-containing films

Etching gases are disclosed for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The etching gases are trans-1,1,1,4,4,4-hexafluoro-2-butene; cis-1,1,1,4,4,4-hexafluoro-2-butene; hexafluoroisobutene; hexafluorocyclobutane (trans-1,1,2,2,3,4); pentafluorocyclobutane (1,1,2,2,3-); tetrafluorocyclobutane (1,1,2,2-); or hexafluorocyclobutane (cis-1,1,2,2,3,4). The etching gases may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.

Fluorocarbon molecules for high aspect ratio oxide etch

Disclosed are Group 6 film forming compositions comprising Group 6 transition metal-containing precursors selected from the group consisting of:M(&#x2550;O)(OR)&#x2003;&#x2003;Formula I,M(&#x2550;O)(NR)&#x2003;&#x2003;Formula II,M(&#x2550;O)(NR)&#x2003;&#x2003;Formula III,M(&#x2550;NR)(OR)&#x2003;&#x2003;Formula IV, andM(&#x2550;O)(OR)&#x2003;&#x2003;Formula V,wherein M is Mo or W and each R is independently H, a C1 to C6 alkyl group, or SiR', wherein R&#x2032; is H or a C1 to C6 alkyl group. Also disclosed are methods of synthesizing and using the disclosed compositions to deposit Group 6 transition metal-containing films on substrates via vapor deposition processes.

Replacement chemistries for the cCFpassivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CHF, with 1&#x2264;x&#x3c;7, 1&#x2264;y&#x2264;13, and 1&#x2264;z&#x2264;13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.

Chemistries for TSV/MEMS/power device etching

Method of deposition on a substrate of a dielectric film by introducing into a reaction chamber a vapor of a precursor selected from the group consisting of Zr(MeCp)(NMe), Zr(EtCp)(NMe), ZrCp(NMe), Zr(MeCp)(NEtMe), Zr(EtCp)(NEtMe), ZrCp(NEtMe), Zr(MeCp)(NEt), Zr(EtCp)(NEt), ZrCp(NEt), Zr(iPrCp)(NMe), Zr(tBuCp)(NMe), Hf(MeCp)(NMe), Hf(EtCp)(NMe), HfCp(NMe), Hf(MeCp)(NEtMe), Hf(EtCp)(NEtMe), HfCp(NEtMe), Hf(MeCp)(NEt), Hf(EtCp)(NEt), HfCp(NEt), Hf(iPrCp)(NMe), Hf(tBuCp)(NMe), and mixtures thereof; and depositing the dielectric film on the substrate.

Method of forming dielectric films, new precursors and their use in semiconductor manufacturing

Disclosed are Hafnium-containing film forming compositions comprising Silicon- and Hafnium-containing precursors having one of the following formula: wherein each R, R, R, R, R, R, R, R, Rand Ris independently selected from H; a C1-C5 linear, branched, or cyclic alkyl group; or a C1-C5 linear, branched, or cyclic fluoroalkyl group. Also disclosed are methods of synthesizing the disclosed compositions and using the same to deposit Hafnium-containing thin films on substrates via vapor deposition processes.

Hafnium-containing film forming compositions for vapor deposition of hafnium-containing films

Disclosed are Group 6 film forming compositions comprising Group 6 transition metal-containing precursors selected from the group consisting of: M(=O)(NR)Formula I, M(=O)(NR)Formula II, and M(=NR)(OR)Formula III, wherein M is Mo or W and each R is independently H, a C1 to C6 alkyl group, or SiR', wherein R&#x2032; is H or a C1 to C6 alkyl group. Also disclosed are methods of synthesizing and using the disclosed compositions to deposit Group 6 transition metal-containing films on substrates via vapor deposition processes.

Disclosed are Si-containing thin film forming precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes for manufacturing semiconductors, photovoltaics, LCD-TFT, flat panel-type devices, refractory materials, or aeronautics.

Organosilane precursors for ALD/CVD silicon-containing film applications

Methods of forming dielectric films, new precursors and their use in semiconductor manufacturing

Replacement chemistries for the cCFpassivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CHF, with 1 &#x2266;x&#x3c;7, 1&#x2266;y&#x2266;13, and 1&#x2266;z&#x2266;13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.

Disclosed are Germanium- and Zirconium-containing precursors having one of the following formulae: wherein each R, R, R, R, R, R, R, R, Rand Ris independently selected from H; a C1-C5 linear, branched, or cyclic alkyl group; and a C1-C5 linear, branched, or cyclic fluoroalkyl groups. Also disclosed are methods of synthesizing the disclosed precursors and using the same to deposit Zirconium-containing films on substrates via vapor deposition processes.

Germanium- and zirconium-containing composition for vapor deposition of zirconium-containing films

Disclosed are hexacoordinate silicon-containing precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes for manufacturing semiconductors, photovoltaics, LCD-TFT, flat panel type devices, refractory materials, or aeronautics. The hexacoordinate silicon-containing molecule have the following formula: (I), wherein each L, L, Land Lis independently selected from oxygen or nitrogen atoms; Land Lare joined together via a carbon bridge having one to three carbon atoms; Land Lare joined together via a carbon bridge having one to three carbon atoms; L, Land the carbon bridge forming a monoanionic ligand bonded to silicon; and L, Land the carbon bridge form a monoanionic ligand bonded to silicon.

Hexacoordinate silicon-containing precursors for ALD/CVD silicon-containing film applications

Growing community of inventors

Wilmington, DE, United States of America

Christian Dussarrat