Micron Technology Incorporated

Chris L Inman

David S Becker

Mark Bossler

William A Polinsky

Dirk J Sundt

Gabriel G Videla

Structure and method for filling an opening in a semiconductor structure that is less susceptible to the formation of voids. A first layer of a first material is formed over the layer in which the opening is to be formed, and a faceted opening is formed in the first layer. The opening in the underlying layer is subsequently formed, and the material that is to fill the opening is deposited over the faceted opening and into the opening of the underlying layer.

Structure and method for forming a faceted opening and a layer filling therein

A method to anisotropically etch an oxide/silicide/poly sandwich structure on a silicon wafer substrate in-situ, that is, using a single parallel plate plasma reactor chamber and a single inert cathode. This method has an oxide etch step and a silicide/poly etch step, both of which are performed as plasma etch steps. The process allows a continuous etch to be applied without removing the wafer from the plasma reactor chamber. The fully etched sandwich structure has a vertical profile which has a controlled slope.

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Boise, ID, United States of America

Chris L Inman