Versum Materials Us, LLC

Chris Keh-Yeuan Li

Xiaobo Shi

Ming-Shih Tsai

Rung-Je Yang

Mark Leonard O'Neill

Hongjun Zhou

Joseph D Rose

Laura M Matz

Agnes Derecskei-Kovacs

Agnes Derecskei

Blake J Lew

Chad Chang-Tse Hsieh

Anu Mallikarjunan

Pao-Chia Pan

Chia-Chien Lee

Pao Chia Pan

Mark Leonard O'neill

Polishing compositions comprising ceria coated silica particles and organic acids having one selected from the group consisting of sulfonic acid group, phosphonic acid group, pyridine compound, and combinations thereof, with pH between 5 and 10 and electrical conductivity between 0.2 and 10 millisiemens per centimeter provide very high silicon oxide removal rates for advanced semiconductor device manufacturing.

Chemical mechanical planarization composition for polishing oxide materials and method of use thereof

Provided are Chemical Mechanical Planarization (CMP) formulations that offer high and tunable Cu removal rates and low copper dishing for the broad or advanced node copper or Through Silica Via (TSV). The CMP compositions provide high selectivity of Cu film vs. other barrier layers, such as Ta, TaN, Ti, and TiN, and dielectric films, such as TEOS, low-k, and ultra low-k films. The CMP polishing formulations comprise solvent, abrasive, at least three chelators selected from the group consisting of amino acids, amino acid derivatives, organic amine, and combinations therefor; wherein at least one chelator is an amino acid or an amino acid derivative. Additionally, organic quaternary ammonium salt, corrosion inhibitor, oxidizer, pH adjustor and biocide are used in the formulations.

Chemical mechanical planarization (CMP) composition and methods therefore for copper and through silica via (TSV) applications

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Tempe, AZ, United States of America

Chris Keh-Yeuan Li