Speedfam Corporation

Speedfam-ipec Corporation

Chris E Karlsrud

Jose R Gonzalez-Martin

Periya Gopalan

Jon R MacErnie

Robert F Allen

Isao Nagahashi

Arthur Hamer

Craig M Howard

Jeff Cunnane

Toby Jordan

Anthony G Van Woerkom

Shigeru Odagiri

Bill Thornton

Fernando Calderon

Anand Gupta

Joseph V Cesna

James Schlueter

Spencer Preston

Daniel R Trojan

Paul L Holzapfel

John Natalicio

Inki Kim

Gene Hempel

Mike L Bowman

Anthony L Bartels

Warren Lin

Thomas K Crosby

Franklin D Root

Gordon J Grosslight

Jeffrey B Cunnane

Bob Allen

Joe Mosca

An integral machine for polishing, cleaning, rinsing and drying workpieces such as semiconductor wafers. A load/unload station has a plurality of platforms for receiving cassettes of wafers to be processed. A dry end-effector of a robot retrieves wafers from the cassettes and transfers them to an index table. A transfer apparatus having wafer carrier elements picks up wafers from the index table, moves the wafers to a polishing table for polishing, and returns the wafers to the index table for further processing. A flipper moves the polished wafers to a cleaning station. The cleaning station includes scrub stations, a rinsing station and a spin dryer station, and a connective system of water tracks. A wet end-effector of the robot transfers rinsed wafers to the spin dryer station. The dry end-effector of the robot moves dried wafers from the spin dryer station back to the cassette of origination.

Robotic method of transferring workpieces to and from workstations

Load and unload station for semiconductor wafers

Cleaning station integral with polishing machine for semiconductor wafers

Mapping system for semiconductor wafer cassettes

Combined CMP and wafer cleaning apparatus and associated methods

Wafer polishing systems include a series of polish modules alongside a neighboring series of secondary modules. A conveyor travels along the series of polish modules and the series of secondary modules. When a polishing operation is completed, the wafers are transferred to a series of near-by storage modules. The polish modules include a pair of traveling wafer gantries, each of which delivers a wafer to a polishing surface, applying the necessary force to complete polishing of the wafer surface.

Arrangements for wafer polishing

Robot assisted method of polishing, cleaning and drying workpieces

Integral machine for polishing, cleaning, rinsing and drying workpieces

The present invention provides an apparatus for cleaning semiconductor workpieces following a Chemical Mechanical Planarization ('CMP') procedure. Initially, a workpiece is scrubbed to remove some of the slurry material and other contaminants on the surfaces of the workpiece. Next, the workpiece is transported into a chemical-etch cleaning station wherein the workpiece is positioned horizontally such that both the upper and lower surfaces are substantially exposed. The workpiece then is immersed in a cleaning solution which is moved around the various surfaces of the workpiece. The workpiece is immersed in the cleaning solution for a sufficient length of time to remove an appropriate layer of oxide, thereby removing contaminants and smoothing micro scratches from the surfaces of the workpiece.

Post-CMP wet-HF cleaning station

A carrier for semiconductor wafers to be polished comprises a rigid upper housing, a rigid pressure plate and a gimbal mechanism connecting the plate and housing which permits the plate to gimbal or wobble relative to the housing. The pressure plate is a one-piece component and has a central cut-out portion in which the gimbal mechanism is disposed, thereby establishing a low gimbal point and reducing the incidence of tilting. The gimbal mechanism has an inner bearing ring which is fastened to the underside of the housing, and an outer bearing ring which is fastened to an outer portion of the pressure plate.

Workpiece carrier with monopiece pressure plate and low gimbal point

A chemical mechanical planarization (CMP) system includes multiple workpiece processing elements arranged in a vertically staggered configuration. The polishing elements are positioned such that an outer edge of a first polishing element overlaps the inner edge of a second polishing element. The overlapping arrangement enables the CMP system to utilize additional polishing elements without substantially increasing the footprint of the CMP system. Each of the polishing elements exhibit different polishing characteristics to enable multiple-step workpiece processing.

Method and apparatus for processing workpieces with multiple polishing

The present invention provides a method for cleaning semiconductor work pieces following a Chemical Mechanical Planarization ('CMP') procedure. Initially, a work piece is scrubbed to remove some of the slurry material and other contaminants on the surfaces of the work piece. Next, the work piece is transported into a HF cleaning station wherein the work piece is positioned horizontally such that both the upper and lower surfaces are substantially exposed. The work piece then is immersed in a hydrogen fluoride ('HF') solution which is circulated around the various surfaces of the work piece. The work piece is immersed in the HF solution for a sufficient length of time to remove an appropriate layer of oxide, thereby removing contaminants and smoothing micro scratches from the surfaces of the work piece.

The present invention provides methods and apparatus which permit the in-process, in-situ, substantially real time measurement of the actual thickness of a surface layer of a work piece, e.g., a semiconductor wafer. A probe is disposed proximate to the outer perimeter of a polishing pad on a CMP table such that the probe establishes optical contact with the wafer surface as a portion of the wafer extends beyond the outer perimeter of the polishing pad. A nozzle may be provided to apply a stream of compressed air at the disk surface under inspection to thereby remove excess slurry from the local region of the workpiece being inspected. A broad band light source is employed in conjunction with a fiber optic cable to direct light at the wafer surface. A bifurcated probe is employed such that the light applied to the workpiece surface is reflected back to and captured by a corresponding optical sensor connected to a fiber optic cable. The captured reflected light received by the receptor sensor and fiber optic cable assembly is applied to a photospectrum meter which analyzes the reflected light. An output signal from the photospectrum meter is transmitted to a processor which includes a smart algorithm configured to calculate the thickness of the surface layer. Alternatively, the reflective characteristics of the semiconductor layers may affect the nature of the reflected signal; changes in the reflected signal can be detected to indicate when a metallic layer has been removed from an oxide layer.

Methods and apparatus for detecting removal of thin film layers during

An apparatus for detecting the presence of extraneous material on a polishing pad during a chemical mechanical planarization (CMP) process uses a contact probe assembly. The contact probe assembly interrogates the surface of the polishing pad during processing of a workpiece and generates a control signal indicating the presence of extraneous material when the displacement of a contact stylus exceeds a threshold amount. The contact probe assembly produces a control signal in response to the detection of extraneous material and the control signal causes the CMP system to react in an appropriate manner to reduce damage to the workpieces being processed.

Methods and apparatus for the in-process detection of workpieces with a

A method of fabricating a soft, resilient backing pad adapted for attachment to a pressure plate for planarizing work pieces wherein the outer exposed surface of the pad has been abraded by means of dry abrasive particles fixed on a surface of a spherical convex lapping wheel.

Backing pad

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Chandler, AZ, United States of America

Chris E Karlsrud