Samsung Electronics Co., Ltd.

Choonshik Leem

Jihye Lee

Chungsam Jun

Deokyong Kim

Soobok Chin

Yongdeok Kim

Kwang-Hoon Kim

Woongkyu Son

Taelim Choi

Byung Hyun Hwang

Chulgi Song

A non-transitory computer-readable medium for monitoring a semiconductor fabrication process includes an image conversion model having an artificial neural network. The image conversion model, when executed, causes the processor to receive a first image and a second image of a semiconductor wafer. The artificial neural network is trained by inputting a dataset representing the first image and the second image, generating a conversion image of the semiconductor wafer and calibrating weights and biases of the artificial neural network to match the conversion image to the second image. A third image of the semiconductor wafer is generated based on the calibrated weights and biases of the artificial neural network. The image conversion model with the trained artificial neural network may be transmitted to another device for image conversion of low resolution images.

Non-transitory computer-readable medium and method for monitoring a semiconductor fabrication process

The measurement method may include obtaining first measurement data from a recess region formed in a semiconductor substrate, obtaining second measurement data from a conductive pattern filling a portion of the recess region, calculating a first volume of the recess region from the first measurement data, calculating a second volume of the conductive pattern from the second measurement data, and calculating a measurement target parameter using a difference between the first and second volumes.

Method and system of measuring semiconductor device and method of fabricating semiconductor device using the same

An ellipsometer includes a stage, a light source, a polarizer, a detector, and a processor. The stage is configured to support a substrate including a pattern. The light source is configured to emit illumination toward the substrate. The polarizer is configured to polarize the illumination. The detector is configured to generate, in association with a plurality of azimuthal angles, data corresponding to polarized illumination reflected from the substrate. The processor is configured to: control rotation of the stage in association with sequential inspection of the pattern at the plurality of azimuthal angles, and determine asymmetry of the pattern based on the data. Each azimuthal angle of the plurality of azimuthal angles corresponds to a different rotational state of the stage.

Ellipsometer and method of inspecting pattern asymmetry using the same

A method for analyzing an object includes measuring a first reflectivity of light from a surface and measuring a second reflectivity of light from the object, after the object is formed on the surface. A variation between the first and second reflectivities is calculated, and the variation is transformed by a predetermined transform. A thickness of the object is determined based on the transformed variation.

Methods for measuring a thickness of an object

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Seoul, South Korea

Choonshik Leem