Skhynix Inc.

Choong Han Ryu

Yong Dae Kim

A method of fabricating a reflective photomask is provided. The method includes sequentially forming a multi-layered reflective layer, an absorption layer and an anti-reflective coating (ARC) layer on a substrate. ARC patterns are formed to expose a portion of the absorption layer by directly irradiating an ion beam onto a portion of the ARC layer to etch the portion of the ARC layer. The exposed portion of the absorption layer is etched using the ARC patterns as etch masks to form absorption patterns exposing a portion of the multi-layered reflective layer.

Method of fabricating reflective photomask

Reflection-type photomasks are provided. The reflection-type photomask includes a substrate and a reflection layer on a front surface of the substrate. The substrate includes a pattern transfer region, a light blocking region and a border region. A trench penetrates the reflection layer in the border region to expose the substrate. First absorption layer patterns are disposed on the reflection layer in the pattern transfer region, and a second absorption layer pattern is disposed on the reflection layer in the light blocking region. Sidewalls of the trench have a sloped profile. Related methods are also provided.

Reflection-type photomasks and methods of fabricating the same

A method for correcting the critical dimension (CD) of a phase shift mask includes calculating an intensity slope quantifying a slope of an intensity waveform of secondary electrons emitted by scanning an electron beam spot to a hard mask pattern on a phase shift mask on a substrate, extracting a delta critical dimension (CD) value, which is equal to a CD difference between the phase shift pattern and the hard mask pattern, as a delta CD value corresponding to the intensity slope, and correcting the CD of the phase shift mask by using the extracted delta CD value.

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Seoul, South Korea

Choong Han Ryu