Applied Materials, Inc.

Choon Kun Ryu

Kaushal Kishore Singh

Michael P Nault

Soonil Hong

Anthony Lam

Andrew Conners

David Wingto Cheung

Judy H Huang

Virendra V Rana

Virendra V S Rana

A method and an apparatus for depositing a dielectric layer to fill in a gap between adjacent metal lines. In preferred embodiments of the method, a first dielectric layer is deposited over the lines and subsequently etched using both chemical and physical etchback steps. After the etchback steps are completed, a second dielectric layer is deposited over the first dielectric layer to fill in the gap.

Method and apparatus for improving gap-fill capability using chemical and physical etchbacks

Method and apparatus for improving gap-fill capability using chemical

A planarized passivation layer is described. A planarized passivation layer of the present invention preferably includes a fluorosilicate glass (FSG) layer and a silicon nitride layer. The FSG layer is preferably deposited using triethoxyfluorosilane (TEFS) and tetraethoxyorthosilicate (TEOS). The inclusion of fluorine in the process chemistry provides good gap-fill characteristics in the film thus formed. The TEFS-based process employed by the present invention employs a low deposition rate, on the order of less than about 4500 .ANG./min, and preferably above 3000 .ANG./min, when depositing the FSG layer. The use of low deposition rate results in a positively sloped profile, preventing the formation of voids during the deposition of the FSG layer and the silicon nitride layer.

Method and apparatus for depositing a planarized passivation layer

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Sunnyvale, CA, United States of America

Choon Kun Ryu