Lsi Logic Corporation

Adeia Semiconductor Bonding Technologies Inc.

National Semiconductor Corporation

Other

Lsi Corporation

Adeia Semiconductor Technologies LLC

Lsi Loigc Corporation

Chok J Chia

Qwai Hoong Low

Patrick J Variot

Seng-Sooi Allen Lim

Maniam B Alagaratnam

Kishor V Desai

Ramaswamy Ranganathan

Charles Gerard Woychik

Seng Sooi Lim

Maurice O Othieno

Robert T Trabucco

Huailiang Wei

Michael D Rostoker

Amar Amin

Owai H Low

Manian Alagaratnam

Wee Keong Liew

Andrew P Switky

Aftab A Ahmad

Michael J Berman

Mark R Schneider

Ranjan J Mathew

Kumar Nagarajan

Tauman T Lau

Abiola A Awujoola

Manickam Thavarajah

Sunil A Patel

Leonard Mora

Clifford R Fishley

Patrick Variot

Qwai H Low

Seng-Sooi (Allen) Lim

Allen Seng Sooi Lim

Abiola Awujoola

Maurice Othieno

A method of making a microelectronic package includes bonding a conductive structure to a carrier so that the conductive structure overlies a rear surface of a microelectronic element disposed on the carrier and an exposed top surface of the carrier. The conductive structure may be a monolithic structure having a base and a plurality of interconnections extending continuously away from the base toward the carrier. The microelectronic element may be positioned between at least two adjacent interconnections of the plurality of interconnections. The plurality of interconnections and the microelectronic element may be encapsulated with an encapsulant. The conductive structure may be patterned to form external contacts. At least some of the external contacts may overlie the microelectronic element.

3D-interconnect

A microelectronic assembly comprises a microelectronic element, a redistribution structure, a plurality of backside conductive components and an encapsulant. The redistribution structure may be configured to conductively connect bond pads of the microelectronic element with terminals of the microelectronic assembly. The plurality of back side conductive components may be etched monolithic structures and further comprise a back side routing layer and an interconnection element integrally formed with the back side routing layer and extending in a direction away from the back side routing layer. The back side routing layer of at least one of the plurality of back side conductive components overlies the rear surface of the microelectronic element. An encapsulant may be disposed between each interconnection element. The back side routing layer of the at least one of the plurality of back side conductive components extends along one of the opposed interconnection surfaces.

A method of making a microelectronic package includes bonding a conductive structure to a carrier. The conductive structure can include a base and a plurality of interconnections extending continuously away from the base toward the carrier. The microelectronic element can be positioned between at least two adjacent interconnections of the plurality of interconnections. The conductive structure may be bonded to the carrier so that the conductive structure overlies a rear surface of a microelectronic element disposed on the carrier and an exposed top surface of the carrier. The plurality of interconnections and the microelectronic element may be encapsulated. The carrier may be removed to expose free ends of the interconnections and bond pads of the microelectronic element. The free ends of the interconnections and bond pads of the microelectronic element may be conductively connected with terminals of the microelectronic package. The conductive structure may be patterned to form external contacts.

A method of making a microelectronic package includes bonding a conductive structure to a carrier so that the conductive structure overlies a rear surface of a microelectronic element disposed on the carrier and an exposed top surface of the carrier. The conductive structure may be a monolithic structure having a base and a plurality of interconnections extending continuously away from the base toward the carrier. The plurality of interconnections may have free ends that overlie the carrier. The microelectronic element may be positioned between at least two adjacent interconnections of the plurality of interconnections. The plurality of interconnections and the microelectronic element may be encapsulated with an encapsulant. The carrier may be removed to expose the free ends of the interconnections and bond pads of the microelectronic element. The free ends of the interconnections and the bond pads of the microelectronic element may be conductively connected with the terminals of the microelectronic package. The conductive structure may be patterned to form external contacts. At least some of the external contacts may overlie the microelectronic element.

A microelectronic assembly includes a substrate, a first and second microelectronic elements, a lead finger, electrical connections extending between contacts of the second microelectronic element and the lead fingers, and an encapsulant overlying at least portions of the first and second microelectronic elements, lead finger and electrical connections. The substrate has contacts at a first surface and terminals at an opposed second surface that are electrically connected with the substrate contacts. The first microelectronic element has contacts exposed at its front face. The front face of the first microelectronic element is joined to the substrate contacts. The second microelectronic element overlies the first microelectronic element and has contacts at a front face facing away from the substrate. The lead frame has lead fingers, wherein the second surface of the substrate and the lead fingers define a common interface for electrical interconnection to a component external to the microelectronic assembly.

Low cost hybrid high density package

A microelectronic assembly can include a microelectronic element and a lead frame having a first unit and a second unit overlying the first unit and assembled therewith. The first unit can have a first metal layer comprising a portion of the thickness of the lead frame and including terminals and first conductive elements extending away therefrom. The second unit can have a second metal layer comprising a portion of the thickness of the lead frame and including bond pads and second conductive elements extending away therefrom. The first and second units each can have an encapsulation supporting at least portions of the respective first and second conductive elements. At least some of the second conductive elements can overlie portions of corresponding ones of the first conductive elements and can be joined thereto. The microelectronic element can have contacts electrically connected with the bond pads of the lead frame.

Area array quad flat no-lead (QFN) package

A microelectronic unit can include a lead frame and a device chip. The lead frame can have a plurality of monolithic lead fingers extending in a plane of the lead frame. Each lead finger can have a fan-out portion and a chip connection portion extending in the lead frame plane. The fan-out portions can have first and second opposed surfaces and a first thickness in a first direction between the opposed surfaces. The chip connection portions can have a second thickness smaller than the first thickness. The chip connection portions can define a recess below the first surface. The device chip can have a plurality of at least one of passive devices or active devices. The device chip can have contacts thereon facing the chip connection portions and electrically coupled thereto. At least a portion of a thickness of the device chip can extend within the recess.

Flip-chip QFN structure using etched lead frame

Embodiments of the invention include a semiconductor integrated circuit package that includes a substrate which can have an integrated circuit die attached thereto. The package includes a dedicated high-speed ground plane that is electrically isolated from the ground plane used to ground the low speed circuitry of the package.

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An integrated circuit package includes a package substrate, a die attach pad formed on the package substrate for securing a die to the package substrate, a ground bonding ring formed on the package substrate for attaching core and I/O ground bond wires between the die and the package substrate, and a first plurality of bond fingers formed immediately adjacent to the ground bonding ring for attaching a first set of I/O signal bond wires between the package substrate and the die.

Wire bond integrated circuit package for high speed I/O

A routing pattern for high speed signals for a package substrate. Electrically conductive bond fingers are disposed on a first surface of the package substrate. The first surface is adapted to receive an integrated circuit in an attachment zone, and the bond fingers are disposed in at least two substantially concentric rings around the attachment zone. The bond fingers of the innermost ring of bond fingers are all routed to electrically conductive first traces disposed on a first layer of the package substrate. The bond fingers other that those on the innermost ring of bond fingers are all routed to electrically conductive second traces disposed on a separate second layer of the package substrate. The package substrate has electrically conductive traces on only the first layer and the second layer. Electrically conductive contacts are disposed on a substantially opposing second surface. The first traces are all routed to a first set of the contacts that are all disposed within an innermost portion of the second surface, and the second traces are all routed to a second set of the contacts that are all disposed within an outermost portion of the second surface.

Two layer substrate ball grid array design

A method for insulating a bonding wire that includes the steps of attaching a bonding wire to a bond pad and coating the bonding wire with an insulating liquid while drawing the bonding wire through a bond tool from the bond pad to a package lead.

Insulated bonding wire tool for microelectronic packaging

An integrated circuit with a pressure resistant current carrying structure having electrically conductive layers for carrying current. A first electrically nonconductive material at least partially surrounds the electrically conductive layers, and provides electrical insulation between the electrically conductive layers. The first electrically nonconductive material has a first degree of fragility and a first dielectric constant. A second electrically nonconductive material is disposed in a pattern within the first electrically nonconductive material and between the electrically conductive layers, and provides structural support for the first electrically nonconductive material between the electrically conductive layers. The second electrically nonconductive material has a second degree of fragility that is less than the first degree of fragility and a second dielectric constant that is greater than the first dielectric constant.

Dielectric stack

Growing community of inventors

Cupertino, CA, United States of America

Chok J Chia