Taiwan Semiconductor Manufacturing Comp. Ltd.

Ching-Yu Lo

Tien-I Bao

Hai-Ching Chen

Chen-Hua Douglas Yu

Wen-Chih Chiou

Hung-Jung Tu

Bo-Jiun Lin

Shau-Lin Shue

Hsin-Yen Huang

An integrated circuit device has a dual damascene structure including a lower via portion and an upper line portion. The lower via portion is formed in a polyimide layer, and the upper line portion is formed in an inter-metal dielectric (IMD) layer formed of USG or polyimide. A passivation layer is formed on the IMD layer, and a bond pad is formed overlying the passivation layer to electrically connect the upper line portion.

Interconnect with flexible dielectric layer

A semiconductor device and method for making such that provides improved mechanical strength is disclosed. The semiconductor device comprises a semiconductor substrate; an adhesion layer disposed over the semiconductor substrate; and a porous low-k film disposed over the semiconductor substrate, wherein the porous low-k film comprises a porogen and a composite bonding structure including at least one Si&#x2014;O&#x2014;Si bonding group and at least one bridging organic functional group.

High mechanical strength additives for porous ultra low-k material

An integrated circuit structure includes a semiconductor substrate; a through-semiconductor via (TSV) opening extending into the semiconductor substrate; and a TSV liner in the TSV opening. The TSV liner includes a sidewall portion on a sidewall of the TSV opening and a bottom portion at a bottom of the TSV opening. The bottom portion of the TSV liner has a bottom height greater than a middle thickness of the sidewall portion of the TSV liner.

Liner formation in 3DIC structures

The present disclosure provides a dielectric material including a low dielectric constant material and an additive. The additive includes a compound having a Si&#x2014;X&#x2014;Si bridge, where X is a number of carbon atoms between 1 and 8. The additive may include terminal Si&#x2014;CHgroups. The dielectric material including the additive may be used as an inter-layer dielectric (ILD) layer of a semiconductor device. The dielectric material including the additive may be formed using a CVD or sol-gel process. One example of the additive is bis(triethoxysilyl)ethene.

Growing community of inventors

Hsinchu, Taiwan

Ching-Yu Lo