United Microelectronics Corp.

Ching-Wen Teng

Chin-Kun Lin

Ming-Hsing Kao

Lee-Lee Lau

Wee-Shiong Tan

Boon Tiong Neo

Er-Yang Chua

The invention is directed to a method for controlling a polishing process. The method comprises steps of providing a first wafer, wherein a thin film is located over the first wafer. A film average thickness distribution is obtained by measuring a plurality of thickness values of the thin film on a plurality regions over the wafer respectively. A removal rate recipe is determined according to the film average thickness distribution. A polishing process is performed according to the removal rate recipe.

Method for controlling polishing process

A wafer carrier gap washer includes at least one wafer carrier head and at least one nozzle installed on a wafer load/unload mechanism. The wafer carrier head has a flexible membrane and a retaining ring for holding a wafer beneath the wafer carrier head during a CMP process. The nozzle sprays fluid toward a gap between the flexible membrane and the retaining ring so as to wash the gap and remove slurry residues produced in the CMP process.

Wafer carrier gap washer

A method for chemical mechanical polishing (CMP) includes a rinsing process performed to clean an orifice of a slurry supplier and other elements of a CMP device. The CMP device includes least one nozzle disposed in the periphery of a base. The function of the nozzle is to spray DI water to the orifice of the slurry supplier so as to prevent slurry residue and clogging.

Growing community of inventors

Tao-Yuan Hsien, Taiwan

Ching-Wen Teng