Pixart Imaging Incorporated

Au Optronics Corporation

Winbond Electronics Corporation

Pixart Imaging Incorporation, R.o.c.

Ching-Wei Chen

En-Feng Hsu

Tsan-Chun Wang

Chien-Chang Huang

Kuo-Hsing Cheng

Chun-Chi Lai

Chih-Cheng Hsieh

Yu-Cheng Chen

Wen-Cheng Yen

Chia-Yu Liu

Cheng-Hong Wei

Hung-Sheng Chen

Shuo-Che Chang

Sen-Huang Huang

Yao-Jen Hsieh

Chao-Chi Lee

Yi-Chang Chang

Hsin-Hung Chou

Chien-Jung Chou

Huan-Kun Pan

Shuen-Yin Bai

Chien-Sheng Chen

A method of wafer dicing and a die are provided. The method includes the following processes. A wafer is provided, the wafer includes a plurality of die regions and a scribe region between the die regions. The scribe region includes a substrate, and a dielectric layer and a test structure on the substrate, the test structure is disposed in the dielectric layer. A first removal process is performed to remove the test structure and the dielectric layer around the test structure, so as to expose the substrate. The first removal process includes performing a plurality of etching cycles, and each etching cycle includes performing a first etching process to remove a portion of the test structure and performing a second etching process to remove a portion of the dielectric layer. A second removal process is performed to remove the substrate in the scribe region, so as to form a plurality of dies separated from each other.

Method of wafer dicing and die

A method of wafer dicing is provided. The method of wafer dicing includes: providing a wafer, wherein the wafer includes a substrate, dies formed in and over the substrate and a scribe line structure located in a scribe line region between adjacent dies; removing a portion of the scribe line structure around a test device in the scribe line structure; attaching a front side of the wafer with a first tape; removing a portion of the substrate overlapping with the scribe line region from a back side of the wafer; attaching the back side of the wafer with a second tape; and removing the first tape along with the remaining portion of the scribe line structure attached thereon, leaving the dies separately attached on the second tape.

Method of wafer dicing

There is provided an optical apparatus including a substrate, a light emitting device, a light sensitive device and a plurality of micro-lenses. The light emitting device is disposed on the substrate and adapted to provide a light beam. The light sensitive device is disposed on the substrate and adapted to receive a light beam reflected from an object, wherein the light sensitive device has a plurality of photosensitive units arranged in matrix. The micro-lenses are disposed above the light sensitive device and respectively opposite to the associated photosensitive units. There is further provided a light sensitive device with micro-lens and a manufacturing method thereof.

Optical apparatus and light sensitive device with micro-lens

Optical apparatus, light sensitive device with micro-lens and manufacturing method thereof

There is provided a front side illuminated (FSI) semiconductor structure with improved light absorption efficiency which is configured to provide a reflecting layer on a bottom of the FSI semiconductor structure to enhance the light absorption efficiency, wherein the reflecting layer is manufactured in the packaging process or the semiconductor process.

Front side illuminated semiconductor structure with improved light absorption efficiency

There is provided a back side illuminated semiconductor structure with a semiconductor capacitor connected to a floating diffusion node in which the semiconductor capacitor for reducing a dimension of the floating diffusion node is provided above the floating diffusion node so as to eliminate the influence thereto by incident light and enhance the light absorption efficiency.

Back side illuminated semiconductor structure with semiconductor capacitor connected to floating diffusion node

An image sensing apparatus comprises at least one sensing pixel and a control circuit. The sensing pixel comprises: a charge storing device; a light sensing device, for respectively generating photoelectrons with a first, second amount in a first, second mode; and a switch device, for determining an amount that the photoelectron can be transmitted to the charge storing device according to a control voltage. The control voltage generates the control voltage to control the amount that the photoelectrons can be transmitted to the charge storing device to be a first charge amount in a first mode and to be a second charge amount in a second mode. The first, second charge amounts are smaller than a maximum charge storing amount for the charge storing device.

Image sensing apparatus and optical navigating apparatus with the image sensing apparatus

An LCD panel transmits the display data to sub-pixels in a zigzag pattern through a data line. The variation of the feed-through voltages of the sub-pixels may be modified by adjusting the ratios of the channel widths and the channel lengths of the TFTs in the sub-pixels to some predetermined ratios, or by adjusting the compensation capacitance to the coupling capacitance of the TFTs of the sub-pixels.

LCD panel capable of compensating the feed-through voltage

A liquid crystal display (LCD) and an LCD panel thereof are provided. The structure of the pixel array of the LCD panel is the structure of the one third source driving (OTSD), and by which skillfully layout the coupled relationship among each pixel, each signal line and each scan line, such that the LCD panel can be driven by a column inversion to achieve the purpose of single-dot inversion displaying, and thus not only reducing the power consumption of the whole LCD, but also promoting the display quality.

Liquid crystal display and liquid crystal display panel thereof

The present invention discloses a high dynamic range imager circuit and a method for reading high dynamic range image with an adaptive conversion gain. The high dynamic range image circuit includes a variable capacitor. The capacitance of the variable capacitor is adjusted according to sensed light intensity or by internal feedback control, to adaptively adjust the conversion gain of the high dynamic range image circuit as it reads a signal which relates to a pixel image sensed by an image sensor device. In each cycle, the signal can be read twice or more with different dynamic ranges, to enhance the accuracy of the signal.

High dynamic range imager circuit and method for reading high dynamic range image

A pinned photodiode sensor with gate-controlled SCR switch includes a pinned photodiode and a gate-controlled SCR switch. The SCR switch includes a P-type substrate, an N&#x2212; doped region, and an N+ doped region formed on the substrate; a P+ doped region formed on the N&#x2212; doped region; an oxide layer formed on the P substrate, the N&#x2212; doped region, the N+ doped region, and the P+ doped region; and a gate formed above the P substrate and the N&#x2212; doped region. The gate includes a P+ doped region and an N+ doped region. During an exposure procedure, a depletion region will not reach the interface between the oxide layer and the substrate, thereby preventing dark current leakage.

Pinned photodiode sensor with gate-controlled silicon-controlled rectifier transfer switch and method of formation

A CMOS image sensor includes a semiconductor substrate; a pinned photodiode formed in a light-sensing region of the semiconductor substrate, the pinned photodiode comprising a charge-accumulating diffusion region and a surface pinning diffusion region overlying the charge-accumulating diffusion region; a transfer transistor, wherein the transfer transistor has a transfer gate comprising a protruding first gate segment with a first gate dimension and a second gate segment with a second gate dimension that is smaller than the first gate dimension. A first overlapping portion between the protruding first gate segment and the charge-accumulating diffusion region is greater than a second overlapping portion between the second gate segment and the charge-accumulating diffusion region.

CMOS image sensor

This invention provides a CMOS image sensor having a pinned photodiode. A P substrate is provided having thereon a P well. The P well is adjacent to a light-sensing region of the CMOS image sensor. A gate electrode of a transfer transistor of the CMOS image sensor is formed on the P well. A self-aligned implantation is performed to form N-type diode diffusion within the light-sensing region. An oblique ion implantation process is then performed to form N-type pocket diffusion directly under the gate electrode. Spacers are formed on sidewalls of the gate electrode. A surface P+ pinning diffusion region is then formed in the diode diffusion region.

Growing community of inventors

Hsin-Chu, Taiwan

Ching-Wei Chen