Mosel Vitelic Corporation

Elan Microelectronics Corporation

Ching-Shun Lin

Chih-Ta Wu

Chien-Hung Chen

Yi-Chuan Yang

Chun-Chi Wang

Tsung-Yin Chiang

Juinn-Sheng Chen

Mike W Sue

A circuit for trimming an internal oscillator of a USB device that generates a clock signal as a frequency source of the USB device includes a counter, a first detector for detecting an end of packet from an input data stream to initialize a counter, a second detector for detecting a synchronization sequence, a token packet or a handshake packet in the data stream for the counter to carry out clock counting on the clock signal, and a trimming code controller for comparing the count value with a reference value to determine a trimming code for trimming a clock frequency of the internal oscillator.

Method and circuit for trimming an internal oscillator of a USB device

A method for forming a concave bottom oxide layer in a trench, comprising: providing a semiconductor substrate; forming a pad oxide layer on the semiconductor substrate; forming a silicon nitride layer on the pad oxide layer; etching the silicon nitride layer, the pad oxide layer and the semiconductor substrate to form the trench in the semiconductor substrate; depositing a silicon oxide layer to refill into the trench and cover on the silicon nitride layer, wherein the silicon oxide layer has overhang portions at corners of the trench; anisotropically etching the silicon oxide layer to form a concave bottom oxide layer in the trench; etching the silicon oxide layer to remove the silicon oxide layer on the silicon nitride layer and the sidewalls of the trench; removing the silicon nitride layer and the pad oxide layer.

Method for fabricating a concave bottom oxide in a trench

A method for preventing bubble defects in borophosphosilicate glass (BPSG) film is provided. A wafer for depositing borophosphosilicate glass (BPSG) film is loaded in deposition chamber. After the wafer is properly positioned, the wafer is heated to a predetermined temperature. A process gas is introduced from the gas distribution system to the deposition chamber. A selected pressure of the deposition chamber is set and maintained throughout deposition process. After deposition of the BPSG film, the wafer is loaded out the chamber. Subsequently, helium gas is introduced to purge the liquid injection valve and delivery path. After pumping out the purge gas, the another wafer is then loaded in the chamber for depositing BPSG film.

Method for preventing bubble defects in BPSG film

Growing community of inventors

Tainan, Taiwan

Ching-Shun Lin