United Microelectronics Corp.

United Semiconductor (xiamen) Co., Ltd.

Ching-Shu Lo

Jie Zhao

Chia-Ping Chen

Wen Yi Tan

Yuan-Chi Pai

Maohua Ren

Hua-Biao Wu

Shi Teng Zhong

Da-Bai Jiang

A lithography film stack applied to an immersion lithography process includes a photoresist, a wavelength adjusting layer and a top coating layer. The photoresist is disposed on a substrate. The wavelength adjusting layer is disposed on the photoresist. The top coating layer is disposed on the wavelength adjusting layer. A refractive index of the wavelength adjusting layer is greater than a refractive index of the top coating layer and a refractive index of an immersion fluid of the immersion lithography process.

Lithography film stack and lithography method

The invention provides a photoresist coating method, which comprises the following steps: providing a wafer with a pattern on the wafer, placing the wafer on a spinner, injecting a photoresist on a central region of the wafer from a nozzle, and carrying out a spin coating step, the spin coating step comprises: turning on the spinner to rotate the spinner to a first rotation speed, and raising the first rotation speed to a second rotation speed, and performing a plurality of brakes during the process of maintaining the second rotation speed, so that the second rotation speed instantly drops to a third rotation speed, and then rises to the second rotation speed again.

Photoresist coating method

A method of performing optical proximity correction for preparing a mask projected onto a wafer by photolithography includes the following steps. An integrated circuit layout design including a first feature and a second feature is obtained, wherein the first feature overlaps a first boundary of two structures in the wafer. An edge of the first feature close to the second feature pertaining to a specific trend section of an experimental chart having trend sections is recognized. An optical proximity correction value is evaluated for the edge through a computer system according to a rule corresponding to the specific trend section. The layout design is compensated with the optical proximity correction value.

Method of performing optical proximity correction for preparing mask projected onto wafer by photolithography

A method of making a photomask layout is provided. A graphic data of a photomask is provided. The graphic data includes at least one rectangular pattern. A correction step is performed to the graphic data by using a computer. The correction step includes adding a substantially ring-shaped pattern inside the rectangular pattern. A method of forming a photomask by using the photomask layout obtained by the said method is also provided. In an embodiment, the photomask is suitable for defining micro-lenses of a solid-state image sensor.

Method of making photomask layout and method of forming photomask including the photomask layout

A method of performing optical proximity correction for preparing a mask projected onto a wafer by photolithography includes the following steps. An integrated circuit layout design comprising a first feature and a second feature is obtained, wherein the first feature overlaps a first boundary of two structures in the wafer. An edge of the first feature close to the second feature pertaining to a specific trend section of an experimental chart having trend sections is recognized. An optical proximity correction value is evaluated for the edge through a computer system by a rule corresponding to the specific trend section. The layout design is compensated with the optical proximity correction value.

In a monitoring method of an exposure apparatus, a top critical dimension (TCD) and a bottom critical dimension (BCD) of the test pattern formed on a photo-sensitive material layer are measured. A dose deviation (&#x394;E) and a focus deviation (&#x394;F) are calculated by following equations:TCD+BCD=&#x3b1;&#x394;+(TCD+BCD)TCD&#x2212;BCD=&#x3b2;Here, &#x3b1;, &#x3b2;and &#x3b2;are constants, &#x394;E=E&#x2212;E, &#x394;F=F&#x2212;F, E represents a real exposure dose, F represents a real exposure focus, Erepresents a dose defined when a middle critical dimension of the test pattern is equal to a predetermined value, Frepresents a focus defined when TCD of the test pattern is equal to BCD thereof, and TCDand BCDare theoretical values in case of Eand F.

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Singapore, Singapore

Ching-Shu Lo