Industrial Technology Research Institute

Ching-Liang Weng

Chang-Sheng Chen

Uei-Ming Jow

Ying-Jiunn Lai

Chun-Kun Wu

Pei-Shen Wei

Chin-Sun Shyu

Chang-Lin Wei

Syun Yu

Pel-Shen Wei

Wei-Ming Jow

A high frequency and wide band impedance matching via is provided, applicable to multi-layer printed circuit boards, for example. The multi-layer circuit board may include several signal transmission traces, several ground layers, signal transmission vias and ground vias. The signal transmission traces and the ground layers may be sited on different circuit layers, and each signal transmission trace may be opposite to one of the ground layers. The signal transmission vias may be connected between the signal transmission traces. The ground vias may be connected between the ground layers. The ground vias may be opposite to the signal transmission vias, and the ground vias corresponding to the signal transmission vias may be sited to stabilize the characteristic impedance of the transmission traces.

High frequency and wide band impedance matching via

A switch module consists of a build-up multi-layer structure and some passive devices. The build-up multi-layer structure has multitudes of conductive layers and dielectric layers laminated upon each another. At least one dielectric layer is interfered between any two conductive layers. Any one passive device is a portion of at least one conductive layer and electrically connects multitudes of conductive pads on the surface of the build-up multi-layer structure.

High-frequency switch in multi-layer substrate

A symmetrical capacitor includes at least a first metal layer and a second metal layer. Each of the metal layers has a first electrode plate and a second electrode plate separated by a predetermined distance. The first electrode plates on the metal layers are symmetrical, and the second electrode plates on the metal layers are symmetrical. Given the symmetrical structure of the capacitor, the output ports of the capacitor have the same electrical features. Therefore, there will not be a direction problem when the capacitor is used, and the symmetrical electrical features are improved.

Symmetrical capacitor

The present invention describes an intermediate for use in a capacitive printed circuit board (PCB), which relates to a capacitive apparatus and manufacturing method for a built-in capacitor with a non-symmetrical electrode used to reduce inaccuracy of the error compression alignment on laminates. The invention employs a plurality of different sized metal laminates stacked for a built-in capacitor to achieve a high-precise capacitor PCB. More particularly, the invention can raise the capability of noise-immunity of a capacitive PCB applied to high frequency/speed modules and systems, and also provides precise capacitance to regular circuit design for the need of compact package and high-precise capacitance in the future.

Capacitive apparatus and manufacturing method for a built-in capacitor with a non-symmetrical electrode

A miniaturized multi-layer balun includes a pair of capacitive elements, at least one section of broadside coupled lines connected in series to an unbalanced and two balanced ports through a pair of transmission lines. Each section has first and second coupled lines. A ground connection is located between two central second coupled lines, and connected to a ground. By means of a multi-layer structure and the addition of a ground connection, the balun of the invention can be fabricated with five conductor layers. This not only greatly decreases the size of the balun device, but also enhances the stability of the device. From the measured return loss and differences in magnitude and phase to the frequency response, it shows that the balun of the invention has good impedance match.

Miniaturized multi-layer balun

An embedded microelectronic capacitor incorporating at least one ground shielding layer is provided which includes an upper ground shielding layer that has an aperture therethrough; an electrode plate positioned spaced-apart from the upper ground shielding layer that has a via extending upwardly away from the electrode plate through the aperture in the upper ground shielding layer providing electrical communication to the electrode plate without shorting to the upper ground shielding layer; a middle ground shielding layer positioned in the same plane of the electrode plate, surrounding while spaced-apart from the electrode plate at a predetermined distance; a lower ground shielding layer positioned spaced-apart from the electrode plate in an opposing relationship to the upper ground shielding layer; and a dielectric material embedding the upper ground shielding layer; the middle ground shielding layer and the lower ground shielding layer.

Embedded microelectronic capacitor incorporating ground shielding layers and method for fabrication

An embedded microelectronic capacitor equipped with geometrically-centered electrodes which includes an upper electrode plate of a first polarity; a middle electrode plate of a second polarity opposite to the first polarity; at least one lower electrode plate of the first polarity in electrical communication with the upper electrode plate through a center via. The center via is positioned at a distance from a geometric center of the middle electrode plate of not larger than 50% of the diameter of the plate, and preferably not larger than 30% of the diameter.

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Taipei, Taiwan

Ching-Liang Weng