Taiwan Semiconductor Manufacturing Comp. Ltd.

Ching-Kunn Huang

Jiann-Jong Wang

Ding-Dar Hu

Horng-Jer Hsiue

The present invention provides a method for performing a pre-amorphization implant which reduces damage to the resist protect oxide layer and reduces leakage current between the gate and substrate. Two novel approaches are provided, both of which use a photoresist mask to protect the RPO from implant damage during PAI. In the first approach, the PAI is performed immediately after RPO etching to form contact openings. Thus the original photoresist mask is still on the RPO. In the second approach, the photoresist mask is re-formed prior to PAI to protect the RPO from implant damage.

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Hsin-Chu, Taiwan

Ching-Kunn Huang