Taiwan Semiconductor Manufacturing Comp. Ltd.

Chin-Yu Lin

Keng-Ying Liao

Su-Yu Yeh

Po-Zen Chen

Huai-jen Tung

Chia-Yun Chen

Ta-Cheng Wei

Hsien-Li Chen

An image sensor structure includes a semiconductor device, a plurality of image sensing elements formed in the semiconductor substrate, an interconnect structure formed on the semiconductor substrate, and a composite grid structure over the semiconductor substrate. The composite grid structure includes a tungsten grid, an oxide grid over the tungsten grid, and an adhesion enhancement grid spacing the tungsten grid from the oxide grid.

Image sensor grid and method of fabrication of same

A method for fabricating a semiconductor device is provided. The method includes forming a metal catalyst layer on an etching area of the semiconductor substrate; performing a wet etch process to the semiconductor substrate to etch the etching area of the semiconductor substrate under the metal catalyst layer, thereby forming a trench in the semiconductor substrate; and removing the metal catalyst layer from the semiconductor substrate after performing the wet etch process.

Method for forming a semiconductor device

Growing community of inventors

Taichung, Taiwan

Chin-Yu Lin