Lam Research Corporation

Chin-Yi Liu

David M Schaefer

Dan A Marohl

Padma Gopalakrishnan

Russell Ormond

Nash W Anderson

Daniel Lai

Rajitha Vemuri

An insulator-type substrate is positioned on a support surface of a substrate support structure in exposure to a plasma. An initial clamping voltage is applied to an electrode within the substrate support structure to rapidly accumulate electrical charge on the support surface to hold the substrate. A backside cooling gas is flowed to a region between the substrate and the support surface, and a leak rate of the backside cooling gas is monitored. A steady clamping voltage is applied to the electrode, and the steady clamping voltage is adjusted in a step-wise manner to maintain the monitored leak rate of the backside cooling gas at just less than a maximum allowable leak rate. Or, a pulsed clamping voltage is applied to the electrode, and the pulsed clamping voltage is adjusted to maintain the monitored leak rate of the backside cooling gas at just less than the maximum allowable leak rate.

Methods for controlling clamping of insulator-type substrate on electrostatic-type substrate support structure

A system is disclosed for measuring an impedance of a plasma processing chamber. The system includes a radiofrequency signal generator configured to output a radiofrequency signal based on a frequency setpoint and provide an indication of an actual frequency of the radiofrequency signal, where the actual frequency can be different than the frequency setpoint. The system includes an impedance control module including at least one variable impedance control device. A difference between the actual frequency of the radiofrequency signal as output by the radiofrequency signal generator and the frequency setpoint is partially dependent upon a setting of the at least one variable impedance control device and is partially dependent upon the impedance of the plasma processing chamber. The system includes a connector configured to connect with a radiofrequency signal supply line of the plasma processing chamber. The impedance control module is connected between the radiofrequency signal generator and the connector.

Universal non-invasive chamber impedance measurement system and associated methods

In accordance with this disclosure, there are provided several inventions, including a substrate processing apparatus with multi-layer surfaces configured to face the plasma and resist against corrosion. These multi-layer surfaces may in one example include a base layer of aluminum, anodized aluminum, or quartz, a second layer of stabilized zirconia, and a second layer of a yttrium-aluminum composite such as yttrium aluminum garnet (YAG).

Long lifetime thermal spray coating for etching or deposition chamber application

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San Jose, CA, United States of America

Chin-Yi Liu