Siliconware Precision Industries Co., Ltd.

Chin-Te Chen

Chang-Fu Lin

Ke-Chuan Yang

Ming-Xun Lee

Chien-Ping Huang

Han-Ping Pu

Yu-Ting Lai

Wen-Ta Tsai

Charles Tseng

Ming-Hsun Lee

Hung-Ming Chang

Chung-Pao Wang

Shi-Yu Chang

A circuit board structure and a method for fabricating the same are disclosed, including providing a core board having conductive traces and solder pads respectively formed thereon, wherein width of the solder pads corresponds to that of the conductive traces, and pitch between adjacent solder pads is made wide enough to allow multiple conductive traces to pass through; forming on the core board an insulating layer with openings for exposing the solder pads therefrom; forming on the insulating layer a plurality of extending pads electrically connected to the solder pads respectively, wherein the projection area of the extending pads is larger than that of the corresponding solder pads and covers conductive traces adjacent to the corresponding solder pads. Thus, more conductive traces are allowed to pass between adjacent solder pads and meanwhile, the extending pads provide an effective solder ball wetting area for achieving good solder joints and sufficient height after collapse.

Circuit board structure and method for fabricating the same

A heat-dissipating structure and a heat-dissipating semiconductor package having the same are disclosed in the present invention. The heat-dissipating semiconductor package includes a chip carrier, a flip chip semiconductor chip attached and electrically connected to the chip carrier, and a heat sink bonded to the flip chip semiconductor chip via a thermal interface material, such as a solder material, wherein a groove is formed on the heat sink around the bonding area of the thermal interface material, and a blocking layer, such as a metal oxide layer, is formed on the surface of the groove to reduce the wetting capability of the thermal interface material, thus further prevents the thermal interface material from wetting the groove in the fusion process performed the thermal interface material, therefore, it ensures the thermal interface material has sufficient thickness for forming solder bonding between the heat sink and the flip chip semiconductor chip.

Heat-dissipating structure and heat-dissipating semiconductor package having the same

A heat dissipating structure and a semiconductor package with the same are proposed. A substrate is used to accommodate at least one chip thereon, and the chip is electrically connected to the substrate. A heat dissipating structure having a flat portion and a support portion is mount on the substrate via the support portion by means of an adhesive. At least one groove is formed on the support portion and at least one air vent is formed around the groove to allow the groove to communicate with the outside via the air vent, such that the adhesive is allowed to fill the groove to expel air from the groove to the atmosphere through the air vent, thereby preventing the air from trapped in the groove.

Heat dissipating structure and semiconductor package with the same

A semiconductor package with a heat dissipating structure includes a substrate, a chip and a heat dissipating structure. The chip is mounted on and electrically connected to the substrate. The heat dissipating structure includes a first heat sink having at least one positioning portion, and at least one second heat sink having at least one second positioning portion and at least one hollow portion. The second heat sink is mounted on the substrate, and the first positioning portion of the first heat sink is attached to the second positioning portion of the second heat sink, allowing the chip to be accommodated in a space defined by the first heat sink, the hollow portion of the second heat sink and the substrate. This semiconductor package has good heat dissipating efficiency and is cost-effective to fabricate.

Semiconductor package with heat dissipating structure

A CDBGA package comprises a thermal dissipating substrate and a plurality of conductive bumps. A plurality of vias are formed on a circuit substrate and correspond to the conductive bumps. A plurality of ground pads, ball pads and nodes are formed on the circuit substrate, wherein the ground pads are located in the vias. A solder mask layer covers the patterned trace layer. A plurality of bonding pads are formed on a chip and are electrically connected to the nodes. A molding compound encapsulates the chip, nodes and bonding pads. A plurality of solder balls are located on the ground pads and ball pads, wherein the solder balls fill the vias and are electrically connected to the conductive bumps.

Method of fabricating a CDBGA package

Cavity down ball grid array (CD BGA) package

A wire-bonded semiconductor device with an improved wire-arrangement scheme is proposed, which can help minimize abnormal wire sweep during encapsulation process. Among the bonding wires on the semiconductor device, those located in corners would be mostly susceptible to abnormal wire sweep, particularly a high-loop bonding wire that is located in immediate adjacency to a low-loop bonding wire located in one corner of the wire-bonded semiconductor device. To solve this problem, the low-loop bonding wire that is located in immediate adjacency to the sweep-susceptible high-loop bonding wire is erected substantially to the same loop height as the high-loop bonding wire, so that it can serve as a shield to the sweep-susceptible high-loop bonding wire against the flow of injected resin during encapsulation process, thus preventing abnormal wire sweep. Alternatively, if a pair of low-loop bonding wires are located in immediate adjacency to the sweep-susceptible high-loop bonding wire and are bonded to a common double-wire bond pad, these two low-loop bonding wires are arranged in an intercrossed manner, which can also help reduce the impact of the injected resin on the sweep-susceptible high-loop bonding wire, thus preventing abnormal wire sweep. The prevention of abnormal wire sweep allows the finished semiconductor device to be more assured in quality and reliability.

Wire-bonded semiconductor device with improved wire arrangement scheme for minimizing abnormal wire sweep

A multi-chip module is proposed, which is designed to pack two or more semiconductor chips in a stacked manner over a chip carrier in a single package. The proposed multi-chip module is characterized by the use of a reverse wire-bonding technique to allow the topmost bent portions of a first set of bonding wires connected to the bottommost chip to be positioned above the substrate rather than above the bottommost chip. Then, an adhesive layer is formed to a thickness that allows it to entirely wrap the part of the bonding wires that is positioned above the active surface of the bottommost chip to prevent the bonding wires connected to the bottommost chip to come in contact with at least one overlaid chip. This allows the prevention of voids between the two stacked chips in the encapsulation body. Moreover, the proposed multi-chip module allows the stacked chips to be variably-sized according actual needs without the problem of the bonding wires being damaged during the mounting of the overlaid chip. The overlaid chip is electrically connected to the substrate by a second set of bonding wires, and an encapsulation body is provided to encapsulate the first semiconductor chip, the first set of bonding wires, the second semiconductor chip, and the second set of bonding wires.

Multi-chip module

A wafer sawing/grinding process capable of removing cracks and chipping resulted from a wafer sawing operation. A silicon wafer having an active surface and a back surface is provided. A first tape is attached to the back surface of the wafer and then the wafer is sawn along kerfs between neighboring silicon chips. A second tape is attached to the active surface of the silicon wafer before removing the first tape. The back surface of the wafer is then ground until the wafer reaches a desired thickness. A third tape is attached to the ground back surface of the wafer before removing the second tape.

Growing community of inventors

Taichung Hsien, Taiwan

Chin-Te Chen