Taiwan Semiconductor Manufacturing Comp. Ltd.

Elan Microelectronics Corporation

Chin-Nan Wu

Shiu-Ko JangJian

Chun Che Lin

Yu-Ku Lin

Su-Yu Yeh

Chun-Che Lin

Yen-Chang Chiu

Meng-Chang Liu

Chao-Jie Tsai

Jeng Yang Pan

A method comprises forming an image sensor adjacent to a first side of a substrate, thinning a second side of the substrate, performing a halogen treatment on the second side of the substrate and forming a backside illumination layer on the second side of the substrate.

Surface treatment for BSI image sensors

A method comprises implanting ions in a substrate to form a plurality of photo diodes, forming an interconnect layer over a first side of the substrate and applying a first halogen treatment process to a second side of the substrate and forming a first silicon-halogen compound layer over the second side of the substrate as a result of applying the first halogen treatment process.

A backside illumination image sensor structure comprises an image sensor formed adjacent to a first side of a semiconductor substrate, wherein a first dielectric layer formed over the first side of the semiconductor substrate and an interconnect layer formed over the first dielectric layer. The image sensor structure further comprises a backside illumination film formed over a second side of the semiconductor substrate and a first silicon halogen compound layer formed between the second side of the semiconductor substrate and the backside illumination film.

Back side illumination (BSI) sensors, manufacturing methods thereof, and semiconductor device manufacturing methods are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes providing a workpiece having a front side and a back side opposite the front side. An integrated circuit is formed on the workpiece, and a first insulating material is formed on the back side of the workpiece. A second insulating material is formed over the first insulating material. The second insulating material is patterned to form a grid on the back side of the workpiece.

Back side illumination (BSI) sensors, manufacturing methods thereof, and semiconductor device manufacturing methods

An input apparatus using multidimensional electrodes to define key functions and the encoding method thereof is peculiarized by utilizing N-dimensional electrodes to define the individual key functions, where N is a positive integer number greater than two. The keyboard scan process according to the present invention is to perform the scan on the coordinate electrodes one by one and save the scan codes for making a synthetic determination, so as to identify the key being pressed. The keyboard encoder IC using the keyboard scan process of the present invention is advantageous to the pin number reduction and cost descent.

Input apparatus using multidimensional electrodes to define key functions and the encoding method thereof

A method for forming salicides with lower sheet resistance and increased sheet resistance uniformity over a semiconductor process wafer including providing a semiconductor process wafer having exposed silicon containing areas at a process surface; depositing a metal layer including at least one of cobalt and titanium over the process surface; carrying out at least one thermal annealing process to react the metal layer and silicon to form a metal silicide over the silicon containing areas; and, wet etching unsilicided areas of the metal layer with a wet etching solution including phosphoric acid (HPO), nitric acid (HNO), and a carboxylic acid to leave salicides covering silicon containing areas at the process surface.

Growing community of inventors

Tainan, Taiwan

Chin-Nan Wu