United Microelectronics Corp.

United Microelectric Corp.

Chin-Kun Lin

Ming-Hsing Kao

Lee-Lee Lau

Ching-Wen Teng

Boon-Tiong Neo

Wen-Chin Lin

Tzu-Shin Chen

Wee-Shiong Tan

Boon Tiong Neo

Er-Yang Chua

A chemical mechanical polishing process includes placing a substrate on a first polishing pad of a first platen, wherein the substrate has a bulk metal layer and a barrier layer; polishing the bulk metal layer by using the first polishing pad having a hardness of above 50 (Shore D) until the barrier layer is exposed; polishing the barrier layer on a second polishing pad of a second platen after removing the bulk metal layer, wherein the second polishing pad has a hardness ranging between 40 and 50 (Shore D) and includes an upper layer and a lower backing layer and the upper layer has a hardness less than 50 (Shore D).

Chemical mechanical polishing process

A copper/barrier CMP process includes (a) providing a substrate having a bulk metal layer and a barrier layer; (b) polishing the substrate with a first hard polishing pad on a first platen to substantially remove an upper portion of the bulk metal layer, wherein the first hard polishing pad has a hardness of above 50 (Shore D); (c) polishing the substrate with a second hard polishing pad on a second platen to remove residual copper, thereby exposing the barrier layer, wherein the second hard polishing pad has a hardness of above 50 (Shore D); and (d) polishing the substrate with a third hard polishing pad on a third platen to remove the barrier layer, wherein the third hard polishing pad has a hardness ranging between 40-50 (Shore D).

The invention is directed to a method for controlling a polishing process. The method comprises steps of providing a first wafer, wherein a thin film is located over the first wafer. A film average thickness distribution is obtained by measuring a plurality of thickness values of the thin film on a plurality regions over the wafer respectively. A removal rate recipe is determined according to the film average thickness distribution. A polishing process is performed according to the removal rate recipe.

Method for controlling polishing process

A wafer carrier gap washer includes at least one wafer carrier head and at least one nozzle installed on a wafer load/unload mechanism. The wafer carrier head has a flexible membrane and a retaining ring for holding a wafer beneath the wafer carrier head during a CMP process. The nozzle sprays fluid toward a gap between the flexible membrane and the retaining ring so as to wash the gap and remove slurry residues produced in the CMP process.

Wafer carrier gap washer

A method for chemical mechanical polishing (CMP) includes a rinsing process performed to clean an orifice of a slurry supplier and other elements of a CMP device. The CMP device includes least one nozzle disposed in the periphery of a base. The function of the nozzle is to spray DI water to the orifice of the slurry supplier so as to prevent slurry residue and clogging.

CMP method and device capable of avoiding slurry residues

A polishing head with a floating knife-edge mechanism includes a base, a retaining ring secured to the base defining a pocket area beneath the base, and a lower assembly floating within the pocket area via a diaphragm seal. The lower assembly includes a disk-shaped support plate having a plurality of apertures distributed in a center region of the support plate, a clamp ring used to secure the diaphragm seal along a rim region of the support plate, and the floating knife-edge mechanism positioned between the rim region and the center region of the support plate.

Growing community of inventors

Kao-Hsiung, Taiwan

Chin-Kun Lin