Winbond Electronics Corporation

Chii-Ming Shiah

Yu-Cheng Tung

Jong-Bor Wang

Kao-Tsair Tsai

Yi-Yu Hsu

Hung-Yueh Liao

Kao-Tsai Tsai

First of all, a substrate applied in the lithography process is provided, and then a high transmission attenuate layer (HTAL) is formed on the substrate. Then an opaque layer is formed on the high transmission attenuate layer (HTAL), and then an ion-implanting process is performed in the high transmission attenuate layer (HTAL). Afterward, the opaque layer is etched to define a first phase region and a second phase region on the high transmission attenuate layer (HTAL). Subsequently, a photoresist layer is formed on the second phase region and the opaque layer to expose a partial surface of the high transmission attenuate layer (HTAL) that is located the first phase region. Then the partial surface of the high transmission attenuate layer (HTAL) that is located on the first phase region is etched through until a predetermined depth in the substrate. Finally, removing the photoresist layer is to form a phase shifted region in the etched region and a phase unshifted region in the unetched region, whereby a phase mask that can make uniform exposure intensity is obtained by this invention.

Method for fabricating phase mask of photolithography process

An alternating phase shift mask. The alternating phase shift mask includes a transparent substrate, a light-shielding layer disposed on the transparent substrate to define a transparent array consisting of a plurality of first phase rows and a plurality of second phase rows alternately interposed between the first phase rows. The alternating phase shift mask further comprises a phase interference enhancement feature disposed a predetermined distance from the outermost row of the transparent array, wherein the phases of the phase interference enhancement feature and the outermost row are reverse.

Alternating phase shift mask

This is related to a method for the manufacture of a capacitor with wing extensions and the capacitor device. The method comprises: (1) causing multiple contact areas to be disposed in alternate positions, such that two adjacent contact areas are complements of each other, (2) depositing electroplating base material (EBM) over the contact area, (3) electroplating a conductive material on the sidewalls of the EBM slab to form plate electrode; and then (4) etching back the EBM leaving only the electrode portion. The capacitor formed by the above method has a larger surface area on the electrode compared with that made by the conventional method, and the cell capacitance is also better. This method is especially effective for the manufacture of high-density memory device.

Growing community of inventors

Hsin-Chu, Taiwan

Chii-Ming Shiah