Tokyo Electron Limited

Chihiro Taguchi

Nobuyuki Okayama

Shinji Muto

Ryo Nonaka

The susceptor of a plasma treating device, or the electrostatic chuck of a substrate table, is formed by ceramic thermal spray method. A thermally sprayed ceramic layer is pore-sealed by methacrylic resin. Resin raw material mainly containing methyl methacrylate is applied to and impregnated into the thermally sprayed ceramic layer and then is cured to thereby fill pores between ceramic particles in the thermally sprayed ceramic layer with methacrylic resin. Methacrylic resin raw material solution, which does not produce pores at curing, can complete perfect pore sealing.

Substrate table, production method therefor and plasma treating device

The susceptor () of a plasma treating device, or the electrostatic chuck () of a substrate table is formed by ceramic thermal spray method. A ceramic spray layer (A) is pore-sealed by methacrylic resin (D). Resin raw material mainly containing methyl methacrylate is applied to and impregnated into the ceramic spray layer and then is cured to thereby fill pores between ceramic particles in the ceramic spray layer with methacrylic resin. Methacrylic resin raw material solution, which does not produce pores at curing, can complete perfect pore sealing.

The present invention is constituted of a lower electrode structure ( ) comprising a base table ( ) formed of a conductive material, an electrostatic adsorption member ( ) formed on the base table ( ) and having a dielectric layer ( ) on which the substrate to be mounted and within which an electrode ( ) electrically isolated from the base table ( ) is housed, first wiring ( ) having an end connected to the electrode ( ) of the electrostatic adsorption member, a direct-current source ( ) connected to the other end of the first wiring ( ), second wiring ( ) having an end connected to the base table ( ), a high frequency source ( ) connected to the other end of the second wiring ( ), a third wiring ( ) for connecting the first wiring ( ) and the second wiring ( ), and a capacitor ( ) formed on the third wiring ( ). Plasma processing is performed by disposing the lower electrode structure ( ) in the chamber ( ).

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Kofu, Japan

Chihiro Taguchi