United Microelectronics Corp.

Chih-Yi Wang

Cheng-Pu Chiu

Tien-Shan Hsu

Yao-Jhan Wang

Yu-Chih Su

Chi-Hsuan Cheng

An-Chi Liu

Chin-Yang Hsieh

Te-Chang Hsu

Nan-Yuan Huang

Chi-Sheng Tseng

Huang-Ren Wei

Kuan-Lin Chen

A semiconductor device is provided in the disclosure, including a substrate, multiple parallel fins protruding from the substrate and isolated by trenches, and a device insulating layer on the trenches between two fins, wherein the trench is provided with a central first trench and two second trenches at both sides of the first trench, and a depth of the first trench is deeper than a depth of the second trench, and the device insulating layer is provided with a top plane, a first trench and a second trench, and the fins protrude from the top plane, and the bottom surface of the second trench is lower than the bottom surface of the first trench.

Semiconductor device and method of manufacturing the same

A fin field effect transistor structure with particular gate appearance is provided in this disclosure, featuring a fin on a substrate and a gate on the substrate and traversing over the fin, wherein the fin is divided into an upper portion on a top surface of the fin and a lower portion on two sides of the fin, and the lower portion of the gate has protrusions laterally protruding in said first direction at positions abutting to the fin.

Fin field effect transistor structure with particular gate appearance

A semiconductor device and a method of forming the same, the semiconductor device includes a first and a second fin structures, a first, a second and a third isolation structures, and a first and a second gate structures. The first and second fin structures are disposed in a substrate. The first isolation structure is disposed in the substrate and surrounds the first and second fin structures. The second isolation structure is disposed in the first fin structure, and a top surface of the second isolation structure is leveled with a top surface of the first and second fin structures. The third isolation structure is disposed in the second fin shaped structure, and a top surface of the third isolation structure is lower than the top surface of the first and second fin structures. The first and second gate structures are disposed on the second and third isolation structures, respectively.

Method of forming semiconductor device

A semiconductor structure includes a substrate, a plurality of fin shaped structures, a trench, and a first bump. The substrate has a base, and the fin shaped structures protrude from the base. The trench is recessed from the base of the substrate. The first bump is disposed within the trench and protrudes from a bottom surface of the trench. A width of the first bump is larger than a width of each of the fin shaped structures.

Semiconductor structure with a bump having a width larger than a width of fin shaped structures and manufacturing method thereof

Semiconductor device and method of forming the same

A method of fabricating fins includes providing a silicon substrate. The silicon substrate is etched to form numerous fin elements. A surface of each of the fin elements is silicon. Etch residues are formed on the fin elements after the silicon substrate is etched. After that, a flush step is performed on the fin elements by flushing the surface of each of the fin elements with fluorocarbons. The etch residues on the fin elements are removed by the flush step. After the flush step, a strip step is performed on the fin elements by treating the surface of each of the fin elements with oxygen plasma.

Method of fabricating fins including removing dummy fins after fluorocarbon flush step and oxygen clean step

A semiconductor structure includes a substrate, a plurality of fin shaped structures, a trench, and a first bump. The substrate has a base, and the fin shaped structures protrude from the base. The trench is recessed from the base of the substrate. The first bump is disposed within the trench and protrudes from a bottom surface of the trench. A topmost portion of the first bump is lower than the base, and a width of the first bump is larger than a width of each of the fin shaped structures.

Semiconductor structure having a bump lower than a substrate base and a width of the bump larger than a width of fin shaped structures, and manufacturing method thereof

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Tainan, Taiwan

Chih-Yi Wang