Taiwan Semiconductor Manufacturing Comp. Ltd.

Industrial Technology Research Institute

Elite Advanced Laser Corporation

Chih-Tsung Shih

Jeng-Horng Chen

Anthony Yen

Shinn-Sheng Yu

Li-Jui Chen

Po-Chung Cheng

Yen-Cheng Lu

Chewn-Pu Jou

Tsung Chuan Lee

Stefan Rusu

Tsung-Chih Chien

Chia-Jen Chen

Bo-Tsun Liu

YingKit Felix Tsui

Wei-Kang Liu

Chin-Hsiang Lin

Hsin-Chang Lee

Chun-Kuang Chen

Hau-Yan Lu

Fu-Jye Liang

Hung-Wen Cho

Shih-Chang Shih

Chung-Ju Lee

Feng-Wei Kuo

Tsung-Chuan Lee

Lan-Chou Cho

Tsung-Min Huang

Chi-Lun Lu

Chang-Sheng Chu

Chung-Fan Chiou

Ming-Chia Li

Ying-Chih Pu

Zi-Wen Chen

Tsiao-Chen Wu

Yu-Hsun Wu

Tao-Min Huang

Hao-Shiang Chang

Chan-Hong Chern

Shang-Chieh Chien

Shih-Ming Chang

Chih-Chang Lin

Chia-Hao Yu

Pei-Cheng Hsu

Felix Ying-Kit Tsui

Chia-Chen Chen

Shih-Chi Fu

Min-Hsiang Hsu

Yu-Tang Li

Weiwei Song

Rung-Ywan Tsai

Shuang-Chao Chung

Ching-Wei Shen

Jung-Po Chen

Tien-Hsi Lee

Chi-Hua Fu

Jui-Chieh Chen

Cheng-Kuan Wu

Kuotang Cheng

Felix Yingkit Tsui

Hung-Lieh Hu

Chen-Peng Hsu

Yahru Cheng

Shu-Hao Chang

Chao-Chi Pan

Chieh-Han Wu

Hung-Chi Chien

Shiuh Chao

Shin-Ge Lee

Chen-Ming Wang

Wei-Hung Liu

Chia-Chun Chung

Chein-Shiu Kuo

Lee-Shian Jeng

Huai-Yi Chen

Chia-Hao Hsu

Ta-Cheng Lien

Feng Yuan

Hsin-Chieh Yao

Chih-Cheng Lin

Yi-Wei Lee

Hao-Ming Chang

Yu-Chen Yu

Mohammed Rabiul Islam

Sui-Ying Hsu

Chieh-Jen Cheng

Norman Chen

Wei-Chih Lai

Jing-Hwang Yang

Yi-Jen Chan

Chien-Hung Lai

Hsin-Yun Tsai

Chia-Shih Lin

Chen-Bin Huang

Chu-Liang Cheng

Chien-Jen Sun

Yu-Hsin Hsu

Kuan-Chieh Tu

Hsuan-Wen Wang

Bing-Ru Chen

Ming-Jiun Yao

A method includes receiving a silicon substrate; forming a first doped region and a second doped region in the silicon substrate; forming a third doped region and fourth doped region on upper portions of the first doped region and the second doped region, respectively; and patterning the silicon substrate to form an optical modulator. The optical modulator includes: a first section; a second section and a third section at least formed from the first and second doped regions, respectively; a fourth section, including a first height less than that of the first section and the second section and arranged between the first section and the second section, the fourth section being an undoped region; and a fifth section immediately adjacent to the fourth section, the fifth section including a height less than that of the first section and the second section and different from the first height.

Optical modulator and method of forming the same

A method for manufacturing an integrated circuit device is provided. The method includes: providing a photonic structure including an insulating structure and an optical coupler embedded in the insulating structure; and removing a portion of the insulating structure to expose a coupling surface of the optical coupler and form a light reflective structure corresponding to the coupling surface.

Method for manufacturing silicon photonic device and silicon photonic device thereof

Various embodiments of the present disclosure are directed towards an integrated circuit. The integrated circuit includes a substrate having an upper face and a lower face. The upper face includes a central region and an outer sidewall that laterally surrounds the central region and that extends from the upper face to the lower face. An optical edge coupler is disposed over the upper face of the substrate and extends in a first direction from the central region toward the outer sidewall. An outer sidewall of the optical edge coupler corresponds to the outer sidewall of the substrate and has a concave surface or a convex surface.

Facet profile to improve edge coupler beam pointing and coupling efficiency for photonics

An optical device for coupling light propagating between a waveguide and an optical transmission component is provided. The optical device includes a taper portion and a grating portion. The taper portion is disposed between the grating portion and the waveguide. The grating portion includes rows of grating patterns. A first size of a first grating pattern in a first row of grating patterns is larger than a second size of a second grating pattern in a second row of grating patterns. A first distance between the first row of grating patterns and the waveguide is less than a second distance between the second row of grating patterns and the waveguide.

Optical device for coupling light and method for fabricating the same

A semiconductor structure includes a semiconductor substrate, a semiconductor device and a heating structure. The semiconductor substrate includes a device region and a heating region surrounding the device region. The semiconductor device is located on the device region. The heating structure is located on the heating region and includes an intrinsic semiconductor area, at least one heating element and at least one heating pad. The intrinsic semiconductor area is surrounding the semiconductor device. The at least one heating element is located at a periphery of the intrinsic semiconductor area. The at least one heating pad is joined with the at least one heating element, wherein the at least one heating pad includes a plurality of contact structures, and a voltage is supplied from the plurality of contact structures to control a temperature of the at least one heating element.

Method of fabricating semiconductor structure with heating element

A semiconductor structure includes a waveguide and an optical attenuator. The waveguide is disposed over an insulating layer and configured to guide light. The optical attenuator is connected to the waveguide. The optical attenuator has a first surface and a second surface opposite the first surface, and a cross-sectional width of the optical attenuator decreases from the first surface to the second surface.

Semiconductor structure and method for forming the same

A reticle enclosure includes a base including a first surface, a cover including a second surface and coupled to the base with the first surface facing the second surface. The base and the cover form an internal space that includes a reticle. The reticle enclosure includes restraining mechanisms arranged in the internal space and for securing the reticle, and structures disposed adjacent the reticle in the internal space. The structures enclose the reticle at least partially, and limit passage of contaminants between the internal space and an external environment of the reticle enclosure. The structures include barriers disposed on the first and second surfaces. In other examples, a padding is installed in gaps between the barriers and the first and second surfaces. In other examples, the structures include wall structures disposed on the first and second surfaces and between the restraining mechanisms.

Method of manufacturing semiconductor device

Disclosed are apparatus and methods for optical interconnections that include the integration of a photonics die (pDie) and an electronic die (eDie) with a socket layer, waveguides and fiber connectors to enable high bandwidth communications. In one embodiment, an exemplary optical interconnect device includes an electronic die coupled to a photonics die and integrated with a substrate, a socket, a board, a pair of micro-lenses and a mirror coupled to a waveguide, which can be embedded in the board. In another embodiment, the waveguide is embedded in a socket layer and coupled to a fiber connector. In these embodiments, the exemplary optical interface device can be coupled one more other optical interconnect devices via a waveguide array and/or a fiber array.

Apparatus and methods for optical interconnects

An extreme ultraviolet (EUV) mask includes a multilayer Mo/Si stack comprising alternating Mo and Si layers disposed over a first major surface of a mask substrate, a capping layer made of ruthenium (Ru) disposed over the multilayer Mo/Si stack, and an absorber layer on the capping layer. The EUV mask includes a circuit pattern area and a particle attractive area, and the capping layer is exposed at bottoms of patterns in the particle attractive area.

Extreme ultraviolet mask and method of manufacturing the same

An edge coupler, a waveguide structure and a method for forming a waveguide structure are provided. The edge coupler includes a substrate, a first cladding layer, a core layer and a first anti-reflection coating layer. The first cladding layer has a second sidewall aligned with a first sidewall of the substrate. The core layer has a third sidewall aligned with the second sidewall. The anti-reflection coating layer lines the first sidewall, the second sidewall and the third sidewall. A thickness of the anti-reflection coating layer varies along the first sidewall, the second sidewall and the third sidewall.

Edge coupler and waveguide structure and forming method thereof

A semiconductor structure includes a substrate, a grating coupler structure over the substrate, a multi-layers film structure over the grating coupler structure. The multi-layers film structure include a first layer including a first refractive index, a second layer over the first layer and including a second refractive index and a third layer over the second layer and including a third refractive index. The second refractive index is greater than the first refractive index and is greater than the third refractive index of the third layer, and a thickness of each layer of the multi-layers film structure is within a range from λ/4 to λ2, λ is a wavelength of light.

Semiconductor structure with multi-layers film

Some implementations described herein include a photonics integrated circuit device including a photonics structure. The photonics structure includes a waveguide structure and an optical attenuator structure. In some implementation, the optical attenuator structure is formed on an end region of the waveguide structure and includes a metal material or a doped material. In some implementations, the optical attenuator structure includes a gaussian doping profile within a portion of the waveguide structure. The optical attenuator structure may absorb electromagnetic waves at the end of the waveguide structure with an efficiency that is improved relative to a spiral optical attenuator structure or metal cap optical attenuator structure.

Semiconductor device and methods of formation

Disclosed are apparatus and methods for optical coupling. In one example, a method for forming an optical coupler, includes: forming an insulation layer on a semiconductor substrate; epitaxially growing a semiconductor material on the insulation layer to form a semiconductor layer; etching, according to a predetermined pattern, the semiconductor layer to form: an array of etched holes in the semiconductor layer to form a grating region, a first taper structure extending from a first side of the grating region, wherein a shape of the first taper structure in the semiconductor layer is a first triangle that is asymmetric about any line perpendicular to the first side of the grating region, and a second taper structure extending from a second side of the grating region, wherein a shape of the second taper structure in the semiconductor layer is a second triangle that is asymmetric about any line perpendicular to the second side of the grating region, wherein the first side and the second side are substantially perpendicular to each other; and depositing a dielectric material into the array of etched regions to form an array of scattering elements in the semiconductor layer, wherein the scattering elements are arranged to form a two-dimensional (2D) grating.

Two-dimensional grating coupler and methods of making same

A method of forming an extreme ultraviolet (EUV) mask includes forming a multilayer Mo/Si stack comprising alternating stacked Mo and Si layers over a mask substrate; forming a ruthenium capping layer over the multilayer Mo/Si stack; doping the ruthenium capping layer with a halogen element, a pentavalent element, a hexavalent element or combinations thereof; forming an absorber layer over the ruthenium capping layer; and etching the absorber layer to form a pattern in the absorber layer.

Extreme ultraviolet lithography method, extreme ultraviolet mask and formation method thereof

A method for preventing photomask contamination includes securing a photomask on a bottom surface of an electrostatic chuck; generating a first voltage at a peripheral area of the bottom surface of the electrostatic chuck to attract a particle onto the peripheral area of the bottom surface of the electrostatic chuck, wherein the peripheral area of the bottom surface of the electrostatic chuck is not directly above the photomask; after generating the first voltage, generating a second voltage at the peripheral area of the bottom surface of the electrostatic chuck to repulse the particle, wherein the first voltage and the second voltage have opposite electrical properties; and generating a third voltage, by using a collecting plate, near a sidewall of the photomask to attract the repulsed particle.

Operating method for preventing photomask particulate contamination

Growing community of inventors

Hsinchu, Taiwan

Chih-Tsung Shih