Taiwan Semiconductor Manufacturing Comp. Ltd.

Chih-Tang Peng

Tai-Chun Huang

Hao-Ming Lien

Tze-Liang Lee

Teng-Chun Tsai

Huan-Just Lin

Li-Ting Wang

Cheng-Tung Lin

De-Fang Chen

Pei-Ren Jeng

Yen-Chun Huang

Tien-I Bao

Chao-Cheng Chen

Yung-Cheng Lu

Chien-Hsun Wang

Ryan Chia-Jen Chen

Chia-Wei Chang

Bing-Hung Chen

Chi On Chui

Bao-Ru Young

Jin-Aun Ng

Jen-Sheng Yang

Yuan-Tien Tu

Ta-Wei Lin

Chih-Yang Yeh

Jung-Hui Kao

Hui-Wen Lin

Shih-Hao Lo

Maxi Chang

Harry-Hak-Lay Chuang

Mong-Song Liang

Wan-Yi Kao

Bang-Tai Tang

Yu-Cheng Shiau

Ming-Hua Yu

Chien-Hao Chen

Yu Chao Lin

De-Wei Yu

Hung-Ta Lin

Bo-Cyuan Lu

Chunyao Wang

Jian-Shiou Huang

Han-Pin Chung

Shun-Hui Yang

Je-Ming Kuo

Syun-Ming Jang Jang

Kong-Beng Thei

Harry Chuang

Kuang-Yuan Hsu

Kuo-Tai Huang

Chu-Yun Fu

Chyi Shyuan Chern

Chiung-Han Yeh

Ming-Yuan Wu

Yi-Shien Mor

Tsu-Hsiu Perng

Jei Ming Chen

Jui-Hei Huang

Shu-Yi Wang

Yu-Ling Liou

Chih-Fang Liu

Yen-Ming Chen

Keng-Chu Lin

Ming-Hsi Yeh

Li-Zhen Yu

Dian-Hau Chen

Chung-Chi Ko

Hsiang-Ku Shen

Jr-Hung Li

Ching-Feng Fu

Yi-Hung Lin

Shuen-Shin Liang

Chi-On Chui

Ying-Liang Chuang

Huang-Yi Huang

Chih-Hsiang Yao

Shih-Wei Wang

Tsung-Chieh Hsiao

Min-Hsiu Hung

Hung-Yi Huang

Sung-En Lin

Cheng-Po Chau

An-Shen Chang

Hak-Lay Chuang

Chin-Chiu Hsia

Chia-Lin Chuang

Weibo Yu

Jin-Mu Yin

Szu-Ping Lee

Eric Chih-Fang Liu

Chun-Cheng Chou

Chang-Shen Lu

Wei-Jin Li

Han-Sheng Weng

Chia-Tai Lin

Tai-Chung Huang

A semiconductor structure and a method for forming the same are provided. The method includes forming a first protruding structure and a second protruding structure over a substrate, and forming a first insulation material layer on the first protruding structure and the second protruding structure. The method includes performing a pre-treatment process on the first insulation material layer to form a first treated insulation material layer, and forming a second insulation material layer on the first treated insulation material layer. The method includes performing a first insulation material conversion process on the first treated insulation material layer and the second insulation material layer. The first protruding structure and the second protruding structure are bent toward opposite directions during the first insulation material conversion process.

Method for forming semiconductor structure with high aspect ratio

A semiconductor device a method of forming the same are provided. The semiconductor device includes a substrate, a first isolation structure and a second isolation structure over the substrate, a semiconductor fin over the substrate and between the first isolation structure and the second isolation structure, and a third isolation structure extending through the semiconductor fin and between the first isolation structure and the second isolation structure. A top surface of the semiconductor fin is above a top surface of the first isolation structure and a top surface of the second isolation structure. The third isolation structure includes a first dielectric material and a second dielectric material over the first dielectric material. An interface between the first dielectric material and the second dielectric material is below the top surface of the first isolation structure and the top surface of the second isolation structure.

FinFET device and method of forming same

A semiconductor device and method of manufacture are provided. In embodiments a first liner is deposited to line a recess between a first semiconductor fin and a second semiconductor fin, the first liner comprising a first material. The first liner is annealed to transform the first material to a second material. A second liner is deposited to line the recess, the second liner comprising a third material. The second liner is annealed to transform the third material to a fourth material.

Semiconductor device and method of manufacture

The present disclosure is generally related to semiconductor devices, and more particularly to a dielectric material formed in semiconductor devices. The present disclosure provides methods for forming a dielectric material layer by a cyclic spin-on coating process. In an embodiment, a method of forming a dielectric material on a substrate includes spin-coating a first portion of a dielectric material on a substrate, curing the first portion of the dielectric material on the substrate, spin-coating a second portion of the dielectric material on the substrate, and thermal annealing the dielectric material to form an annealed dielectric material on the substrate.

Cyclic spin-on coating process for forming dielectric material

A semiconductor structure and a method for forming the same are provided. The method includes forming a first protruding structure, a second protruding structure, and a third protruding structure over a substrate. The method also includes performing a depositing process to form a first insulation material layer between the first protruding structure and the second protruding structure. The method further includes performing a first insulation material conversion process onto the first insulation material layer to bend the first protruding structure and the second protruding structure toward opposite directions.

Structures and formation methods of a semiconductor device structure are provided. The method includes forming a fin structure over a substrate. The method also includes forming a gate structure over the fin structure. The method further includes forming fin spacers over sidewalls of the fin structure and gate spacers over sidewalls of the gate structure. In addition, the method includes forming a source/drain structure over the fin structure and depositing a dummy material layer to cover the source/drain structure. The dummy material layer is removed faster than the gate spacers during the removal of the dummy material layer. The method further includes forming a salicide layer over the source/drain structure and the fin spacers, and forming a contact over the salicide layer. The dummy material layer includes Ge, amorphous silicon or spin-on carbon.

Semiconductor device structure with salicide layer and method for forming the same

Examples of a technique for forming a dielectric material for an integrated circuit are provided herein. In an example, an integrated circuit workpiece is received that includes a recess. A first dielectric precursor is deposited in the recess. The first dielectric precursor includes a non-semiconductor component. A second dielectric precursor is deposited in the recess on the first dielectric precursor, and an annealing process is performed such that a portion of the non-semiconductor component of the first dielectric precursor diffuses into the second dielectric precursor. The non-semiconductor component may include oxygen, and the annealing process may be performed in one of a vacuum or an inert gas environment.

Integrated circuit isolation feature and method of forming the same

According to an exemplary embodiment, a method of forming an isolation layer is provided. The method includes the following operations: providing a substrate; providing a vertical structure having a first layer over the substrate; providing a first interlayer dielectric over the first layer; performing CMP on the first interlayer dielectric; and etching back the first interlayer dielectric and the first layer to form the isolation layer corresponding to a source of the vertical structure.

Method of forming isolation layer

A cut-last process for cutting fin segments of a FinFET structure on a substrate utilizes a two-step process. After the fins are formed, an oxide material is deposited in the trenches of the FinFET structure. The oxide material can be an STI oxide or a low-stress dummy gapfill material. A fin segment can be removed by an etchant and can leave a concave shaped (such as a u-shape or v-shape) portion of silicon at the bottom of the fin. Where the oxide material is an STI oxide, the void left by removing the fin can be filled with replacement STI oxide. Where the oxide material is a dummy gapfill material, the dummy gapfill material can be removed and replaced with an STI oxide or converted to an STI oxide and filled with replacement STI oxide before or after the conversion.

FinFET structure and device

A method forming a gate dielectric over a substrate, and forming a metal gate structure over the semiconductor substrate and the gate dielectric. The metal gate structure includes a first metal material. The method further includes forming a seal on sidewalls of the metal gate structure. The method further includes forming a dielectric film on the metal gate structure, the dielectric film including a first metal oxynitride comprising the first metal material and directly on the metal gate structure without extending over the seal formed on sidewalls of the metal gate structure.

Self-aligned insulated film for high-K metal gate device

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Zhubei, Taiwan

Chih-Tang Peng