Advanced Optoelectronic Technology, Inc.

Taiwan Semiconductor Manufacturing Comp. Ltd.

Chih-Peng Hsu

Chung-Min Chang

Wei-Ken Lin

Chun Te Li

Shih-Hsiung Chan

Po-Min Tu

Shih-Cheng Huang

Tzu-Chien Hung

Chia-Hui Shen

Chun-Wei Wang

Chien-Lin Chang-Chien

Yu-Wei Tsai

Cheng-Chun Liao

Hao-Xiang Lin

Hsuen-Feng Hu

Wen-Yu Lin

Chih-Pang Ma

Tung-An Chen

Tse-An Lee

A method includes forming a first fin protruding above a substrate, the first fin having a PMOS region; forming a first gate structure over the first fin in the PMOS region; forming a first spacer layer over the first fin and the first gate structure; and forming a second spacer layer over the first spacer layer. The method further includes performing a first etching process to remove the second spacer layer from a top surface and sidewalls of the first fin in the PMOS region; performing a second etching process to remove the first spacer layer from the top surface and the sidewalls of the first fin in the PMOS region; and epitaxially growing a first source/drain material over the first fin in the PMOS region, the first source/drain material extending along the top surface and the sidewalls of the first fin in the PMOS region.

Fin field-effect transistor device and method

Method of manufacturing fin field-effect transistor device

A lens includes a substrate, a light concentrating portion mounted on the substrate. The substrate includes a first substrate and a second substrate, the light concentrating portion includes a first light concentrating portion and a second light concentrating portion. The first light concentrating portion extends outward from the first substrate, the second light concentrating portion extends outward from the second substrate. The first light concentrating portion has a first axis, the second light concentrating portion has a second axis. The first axis and the second axis are configured in an angle and intersect in an extending direction thereof.

Lens and light emitting device having the same

An LED light source device includes an LED light source, a first translucent structure covering the LED light source and a second translucent structure covering the first translucent structure. An interior of the first translucent structure has light scattering powder distributed therein. The LED light source is embedded in the first translucent structure. The LED light source is covered by the light scattering powder. The second translucent structure has a radius of R and an index of refraction of N, while the first translucent structure has a radius of r, wherein R, r and Nsatisfy the following relation: N&#x3c;R/(2r&#x2212;R).

Light emitting diode light source device

A photoelectric device having Group III nitride semiconductor includes a conductive layer, a metallic mirror layer located on the conductive layer, and a Group III nitride semiconductor layer located on the metallic mirror layer. The Group III nitride semiconductor layer defines a number of microstructures thereon. Each microstructure includes at least one angled face, and the angled face of each microstructure is a crystal face of the Group III nitride semiconductor layer.

Photoelectric device having group III nitride semiconductor

A method for fabricating a light emitting diode includes steps of: forming a light emitting structure of the light emitting diode on a substrate; arranging a photoresist layer on a first semiconductor layer of the light emitting structure; depositing a plurality of dielectric material structures on the first semiconductor layer through a plurality of voids of the photoresist layer; removing the photoresist layer to form a plurality of voids between the plurality of dielectric material structures; forming a plurality of metal material structures in the plurality of voids; and forming a reflective layer on the plurality of dielectric material structures and the plurality of metal material structures.

Method for fabricating light emitting diode

A planar light source apparatus includes a plurality of elongated lighting elements disposed in a common plane, and a plurality of mirror reflectors arranged perpendicular to the common plane and facing the lighting elements. The lighting elements are equidistantly spaced from each other. The lighting elements face a same direction. The mirror reflectors frame the lighting elements. The mirror reflectors each have a reflecting surface facing the lighting elements. The reflecting surfaces are perpendicular to the common plane. A distance between one of the reflectors and its nearest lighting element is maximum of half the distance between two adjacent lighting elements.

Planar light source apparatus having reflective surfaces

A planar light source apparatus includes a number of lighting elements disposed in a common plane, and a number of mirror reflectors arranged perpendicular to the common plane and facing the lighting elements. The mirror reflectors each have a reflecting surface facing the lighting elements. The light elements are arranged in a lattice such that the distance from one of the reflectors to the nearest lighting element is a maximum of the half the distance between two adjacent lighting elements.

An exemplary keyboard is provided. The keyboard includes a light pervious base plate, a plurality of input keys, and at least one light source. The light pervious base plate has a top surface. The plurality of input keys are disposed on the light pervious base plate with bottom sides of the input keys facing the top surface of the light pervious base plate. The at least one light source is encapsulated in the light pervious base plate and optically coupled to the light pervious panel.

Keyboard with lighting system

An exemplary LED package includes a dielectric plate, a heat conductor, a first planar electrode and a second planar electrode, a LED chip, and metal wires. The dielectric plate comprises a receiving groove defined therein. The heat conductor is positioned in the dielectric plate opposite to the receiving groove, and the heat conductor comprises a holding portion exposed on bottom of the receiving groove. The first and second planar electrodes are respectively received in the dielectric plate extending to the receiving groove and are spaced from the heat conductor. The first and second electrodes are respectively electrically connected to the LED chip by the metal wires. The LED chip is mounted on the holding portion of the heat conductor.

LED package and light source device using same

A multichip light emitting diode package is provided. The multichip light emitting diode (LED) package includes a substrate having a non-plane surface including a plurality of sectioned-surfaces, a plurality of light emitting diode chips and a transparent molding material. Each of the light emitting diode chips is disposed on one of the sectioned-surfaces of the substrate. The transparent molding material is formed on the substrate for encapsulating the light emitting diode chips. By way of the configurations of the non-plane surface of the substrate and the transparent molding material, the multichip light emitting diode package emits converging light in accordance with the Snell's law. The purposes of evenly mixing emitting lights and improving brightness are achieved. The present invention can provide a single color, multi-color or full-color multichip LED package with uniform brightness and hues.

Multichip light emitting diode package

A high power LED comprises a substrate. An N-type semiconductor layer, an active layer and a P-type semiconductor layer are sequentially deposited on the substrate. A semi-insulator layer or a non-N-type semiconductor layer can be interposed between the N-type semiconductor layer and substrate. At least one N-type electrode is connected to the N-type semiconductor layer and is exposed to an opening of the active layer and P-type semiconductor layer. The N-type electrode with a centralized pattern is formed on the middle of the LED. Furthermore, at least one P-type electrode is coupled to the P-type semiconductor layer. The P-type electrode is arranged like a closed ring or an open ring surrounding the N-type electrode. Therefore, the distribution of current paths is dispersed, and illumination areas are simultaneously uniform.

Growing community of inventors

Hsinchu, Taiwan

Chih-Peng Hsu