Advanced Semiconductor Engineering, Inc.

Chih-Huang Chang

Su Tao

Ho-Ming Tong

Chun-Chi Lee

Po-Jen Cheng

Jeng-Da Wu

William Tze-You Chen

Shih-Chang Lee

Chian-Chi Lin

Yao-Ting Huang

Yu-Wen Chen

Wen-Pin Huang

Chang-Chi Lee

Ming-Lun Ho

Ying-Tsai Yeh

Yueh-Lung Lin

Yung Li Lu

I-Linag Lin

A semiconductor chip package manufacturing method and a structure thereof are provided. The manufacturing method includes: providing a base having an image sensor chip and an encapsulant, in which the image sensor chip has pads and an active area; placing a transparent insulator on the active area; forming an insulation layer on an upper surface of the base; opening a plurality of openings to expose the pads; forming a plurality of through holes penetrating the insulation layer and the encapsulant outside of the image sensor chips; forming a metal layer on surfaces of the insulation layer, the openings, the pads and the through holes, and on a lower surface of the base, so as to extend the pads to the lower surface of the base; patterning the metal layer to expose a top area of the transparent insulator and remove a partial area of the metal layer on the lower surface of the base to form contacts; and sawing the base to form a package structure containing a single image sensor chip.

Semiconductor chip package manufacturing method and structure thereof

A leadframe of a leadless flip-chip package includes a plurality of inner leads, a nonconductive ink layer and a solder mask layer. The inner leads have a plurality of bump-connecting terminals, a plurality of outer terminals and a plurality of redistribution lead portions. A half-etched recession is formed on lower surfaces of the redistribution lead portions, and is filled with the non-conductive ink layer. The non-conductive ink layer fixes the redistribution lead portions onto the bump-connecting terminals. The solder mask layer is easily formed on the non-conductive ink layer and covers the inner leads.

Leadframe of a leadless flip-chip package and method for manufacturing the same

A leadframe of a leadless flip-chip package includes a plurality of inner leads, a non-conductive ink layer and a solder mask layer. The inner leads have a plurality of bump-connecting terminals, a plurality of outer terminals and a plurality of redistribution lead portions. A half-etched recession is formed on lower surfaces of the redistribution lead portions, and is filled with the non-conductive ink layer. The non-conductive ink layer fixes the redistribution lead portions onto the bump-connecting terminals. The solder mask layer is easily formed on the non-conductive ink layer and covers the inner leads.

The present invention discloses an Internet automatic electrical data system that comprises a process controller used to process the analyzing order for IC (integrated circuit) packages entrusted by clients. A database is used to store the input parameters of IC packages and parameters database is used to provide the condition parameters relative to the model of IC package entrusted by clients. An electrical simulation and analyzing software is introduced to analyze the parameters input by clients and the condition parameters provided by the condition parameter database. A report form generator is used to generate the report form of analyzing result and a replying means is used to send the report forms to the clients.

Internet automatic electric data system

A multi-chips module package comprises a lead frame, a first chip, a second chip, a plurality of electrically conductive wires and an encapsulation. The lead frame has a plurality of first leads, second leads and chip pads connecting to the first leads. The first chip is placed on the lead frame and electrically connected to the lead frame through the bumps connecting the bump-bonding pads and the chip pads and the first leads; the second chip is placed over the first chip and electrically connected to the lead frame through the wires connecting the wire-bonding pads to the second leads; and the encapsulation covers the first chip, the second chip, the lead frame, and the wires. In such a manner, it not only reduces the distance of transmitting the electrical signals from chips to the outside but also it can save cost due to the lead frame manufactured by a simple manufacturing processes. In addition, a manufacturing method of the multi-chips module package is provided.

Multi-chips module package and manufacturing method thereof

A chip on glass package. A glass substrate has a top surface and a corresponding bottom surface. A plurality of chips are flip-chip mounted on the top surface of the glass substrate. The bottom surface of the glass substrate is secured to and electrically connected with a carrier. An encapsulation material is formed around the glass substrate to seal the chips. The encapsulation material has a cavity to expose the contact area of the top surface of the glass substrate. Therefore the chip on glass package is to possess a better protection and electrical connection of the glass substrate.

Chip on glass package

A flip chip package structure comprising a chip, a substrate, at least a first bump and a plurality of second bumps is provided. The chip has a first bump-positioning region and the substrate has a second bump-positioning region. The substrate has at least a first hole and multiple second holes. The first hole and the second holes are located within the second bump-positioning region. The first hole has a depth greater than that of the second hole. The first bump is set up between the first bump-positioning region of the chip and the second bump-positioning region of the substrate. The first bump is bonded to the substrate through the first holes. The second bumps are set up between the first bump-positioning region of the chip and the second bump-positioning region of the substrate. The second bumps are bonded to the substrate through the second holes. The first bump has a volume greater than the volume of the second bump.

Flip chip package structure

A multi-chips module assembly package mainly comprises a first package, a second package and an intermediate substrate. The intermediate substrate includes an opening, at least a via and a plurality of circuit layers, wherein the second package is accommodated in the opening. The via has an inner wall, and a plurality of separated electrically conductive layers, which is formed on the inner wall and connected with the corresponding circuit layers. The first package electrically connects with the second package through the intermediate substrate, and the intermediate substrate is interposed between the first package and the second package. At least an insulator is formed in the via, and the separated electrically conductive layers are separated from each other. After the intermediate substrate is interposed between the first package and the second package, there will be not enough space between the intermediate substrate, the first package and the second package for disposing conductive devices therein. Therefore, the first package will be electrically connected to the second package through the separated electrically conductive layers of the intermediate substrate for providing more conductive devices disposed and interposed between the intermediate substrate, the first package and the second package.

Multi-chips module assembly package

An under-bump-metallurgy layer is provided. The under-bump-metallurgy layer is formed over the contact pad of a chip and a welding lump is formed over the under-ball-metallurgy layer. The under-bump-metallurgy layer comprises an adhesion layer, a barrier layer and a wettable layer. The adhesion layer is directly formed over the contact pad. The barrier layer made from a material such as nickel-vanadium alloy is formed over the adhesion layer. The wettable layer made from a material such as copper is formed over the barrier layer. The wettable layer has an overall thickness that ranges from about 3 &#x3bc;m to about 8 &#x3bc;m.

Under-bump-metallurgy layer for improving adhesion

A bump structure on a contact pad and a fabricating process thereof. The bump comprises an under-ball-metallurgy layer, a bonding mass and a welding lump. The under-ball-metallurgy layer is formed over the contact pad and the bonding mass is formed over the under-ball-metallurgy layer by conducting a pressure bonding process. The bonding mass having a thickness between 4 to 10 &#x3bc;m is made from a material such as copper. The welding lump is formed over the bonding mass such that a sidewall of the bonding mass is also enclosed.

Bump and fabricating process thereof

An under-ball-metallurgy layer between a bonding pad on a chip and a solder bump made with tin-based material is provided. The under-ball-metallurgy layer at least includes an adhesion layer over the bonding pad, a nickel-vanadium layer over the adhesion layer, a wettable layer over the nickel-vanadium layer and a barrier layer over the wettable layer. The barrier layer prevents the penetration of nickel atoms from the nickel-vanadium layer and reacts with tin within the solder bump to form inter-metallic compound. This invention also provides an alternative under-ball-metallurgy layer that at least includes an adhesion layer over the bonding pad, a wettable layer over the adhesion layer and a nickel-vanadium layer over the wettable layer. The nickel within the nickel-vanadium layer may react with tin within the solder bump to form an inter-metallic compound.

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Tainan Hsien, Taiwan

Chih-Huang Chang