United Microelectronics Corp.

Other

Mentor Graphics Corporation

Chih-Hsien Tang

Chin-Lung Lin

Yao-Jen Fan

Harn-Jiunn Wang

Shih-Hung Tsai

Chun-Hsien Huang

Rai-Min Huang

Yu-Ruei Chen

Chung-Liang Chu

Ya-Huei Tsai

Kuei-Chun Hung

Yi-Lin Tsai

Chueh-Fei Tai

Teng-Yao Chang

Yi-Chieh Lai

Su-Yun Fang

An imprint method includes the following steps. A first resist layer is formed on a first substrate. A first imprinting step using a first mold is performed to the first resist layer. A first etching process is performed to the first substrate with the first resist layer as an etching mask after the first imprinting step so as to form a first recess pattern in the first substrate. A second resist layer is formed on the first substrate. A second imprinting step using a second mold is performed to the second resist layer. A second etching process is performed to the first substrate with the second resist layer as an etching mask after the second imprinting step so as to form second recess patterns in the first substrate. A depth of the first recess pattern is greater than a depth of each of the second recess patterns.

Imprint method

A method of forming patterns on a substrate by double nanoimprint processes includes providing a first replicate mold and a second replicate mold. The first replicate mold includes numerous first patterns. The second replicate mold includes at least one second pattern. The second pattern corresponds to at least one of the first patterns. Later, a first substrate is provided. A first polymeric compound layer is coated on the first substrate. Next, the first patterns are nanoimprinted into the first polymeric compound layer. Subsequently, the first substrate is etched by taking the first polymeric compound layer as a mask. After that, a second polymeric compound layer is coated on the first substrate. Later, the second pattern is nanoimprinted into the second polymeric compound layer. Finally, the first substrate is etched by taking the second polymeric compound layer as a mask.

Method of forming patterns on substrate by double nanoimprint lithography

A layout pattern for magnetoresistive random access memory (MRAM) includes: a first magnetic tunneling junction (MTJ) pattern on a substrate; a second MTJ pattern adjacent to the first MTJ pattern; and a first metal interconnection pattern between the first MTJ pattern and the second MTJ pattern, wherein the first MTJ pattern, the first metal interconnection pattern, and the second MTJ pattern comprise a staggered arrangement.

Layout pattern for magnetoresistive random access memory

A method for generating a layout pattern includes following steps. A basic layout pattern including a plurality of first stripe patterns in a first cluster region is provided. Each first stripe pattern extends in a first direction, and the first stripe patterns have equal pitches in a second direction. A plurality of anchor bar patterns are generated. Each anchor bar pattern extends in the first direction, and the anchor bar patterns have equal pitches in the second direction. Edges of at least one of the anchor bar patterns in the second direction are aligned with edges of two adjacent first stripe patterns respectively. At least one of the anchor bar patterns overlaps a first space between two adjacent first stripe patterns. At least one first mandrel pattern is generated at the first space overlapped by the anchor bar pattern, and the first mandrel pattern is outputted to a photomask.

Method for generating layout pattern

A layout pattern decomposition method includes following steps. A layout pattern is received. The layout pattern includes a plurality of features, and an edge-to-edge space is respectively defined in between two adjacent features. A sum of a width of the edge-to-edge space and a width of the feature on a left side of the edge-to-edge space and a sum of the width of the edge-to-edge space and a width of the feature on a right side of the edge-to-edge space are respectively calculated. The sums and a predetermined value are respectively compared. When any one of the sums is smaller than the predetermined value, the two features on the two sides of the edge-to-edge space are colored by a first color and alternatively a second color. The features including the first color are assigned to a first pattern and the features including the second color to a second pattern.

Layout pattern decomposition method

A method of decomposing pattern layout for generating patterns on photomasks is disclosed. The method includes decomposing features of an integrated circuit layout into discrete patterns based on the relation between these features. The features include first features and second features. The first features are then classified into a first feature pattern and a second feature pattern, and the second features are classified into third, fourth, fifth and sixth feature patterns. The spacings of the second features in the fifth and sixth feature patterns are greater than a minimum exposure limits. Finally, the first feature pattern is outputted to a first photomask, the second feature pattern is outputted to a second photomask, the third and fifth feature patterns are outputted to a third photomask, and the fourth and sixth feature patterns are outputted to a fourth photomask.

Method of decomposing layout for generating patterns on photomasks

A method of forming a photomask comprises providing a predetermined fin array having a plurality of fin patterns to a computer readable medium in a computer system. First of all, a plurality of width markers is defined by using the computer system, with each of the width marker parallel to each other and comprising two fin patterns, wherein each of the width markers is spaced from each other by a space. Then, a number of the width markers is checked to be an even. Following this, a plurality of pre-mandrel patterns is defined corresponding to odd numbered ones of the spaces. Then, a plurality of mandrel patterns is defined by sizing up the pre-mandrel patterns. Finally, the mandrel patterns are outputted to form a photomask.

Method of forming a photomask

In one embodiment, a spacing is determined for each edge of a number of features in a photolithographic design. The edges have at least a partially predictable layout. Based on the spacing and the predictable layout, a bridge structure is generated. Each bridge of the bridge structure connects one of the edges to an edge of a neighboring feature. Then, the features and the bridge structure are provided for a phase assignment. The phase assignment assigns features at opposite ends of each bridge in the bridge structure to opposite phases. In another embodiment, a sub-resolution assist feature (SRAF) is introduced for an edge of a feature and a bridge is generated from the feature to the SRAF. Then, the feature and the SRAF are assigned to opposite phases based on the relationship defined by the bridge.

Growing community of inventors

Taipei, Taiwan

Chih-Hsien Tang