Taiwan Semiconductor Manufacturing Comp. Ltd.

Cortina Systems Corporation

Cortina Access, Inc.

Chih-Hsien Hsu

Jr-Sheng Chen

Yu-Pei Chiang

Hu-Wei Lin

An-Chi Li

Lin-Ching Huang

Chun Yan Chen

Chin-Han Meng

Shih-Che Huang

Zhi-Hao Huang

Hong-Hsing Chou

Chia-Chi Chung

Ying-Hao Wang

Yu-Hen Wu

Xiaochong Cao

Chung-Hsiu Cheng

Yu-Wei Chiu

Hai-Yin Chen

Chia-Hung Chu

Xi Chen

Hua-Kuang Teng

Tsung-Cheng Huang

Yen-Chen Lin

Ming Chih Wang

Chien-Sheng Wu

Jr-Wei Ye

Yung-Chung Liu

Chien-Chih Chen

Alex Wang

Chia-Hao Chang

Ming-Chyi Liu

Wen-Chih Chen

Chen-Huang Huang

Pin-Yi Hsin

Yuan-Ting Huang

Yu Tsao

Kuo-Chin Liu

Wei-Yueh Tseng

Wei-Da Chen

Chien-Hua Tseng

Chou-Feng Lee

Jian-Jr Li

Chi-Jen Hsieh

Tien-Chih Huang

Ching-Hsing Chiang

Carolina Poe

Hsiao-Yu Chen

Hsieh Chi-Jen

Chun-Chih Chen

Ching-Hsin Chang

Wen Hsu

Shih-Hao Wu

Yu-Chih Tsao

Chien-Hsiung Chang

Ya-Ping Su

Chien Hsiung Chang

Han-Wen Fung

Wen Jye Chung

Zhi-Sheng Xu

Cheng Kuang Tso

Chia-Yi Chiang

Tai-Pin Chuang

Devices and methods for controlling wafer uniformity in plasma-based process is disclosed. In one example, a device for plasma-based processes is disclosed. The device includes: a housing defining a process chamber and a gas distribution plate (GDP) arranged in the process chamber. The housing comprises: a gas inlet configured to receive a process gas, and a gas outlet configured to expel processed gas. The GDP is configured to distribute the process gas within the process chamber. The GDP has a plurality of holes evenly distributed thereon. The GDP comprises a first zone and a second zone. The first zone is closer to the gas outlet than the second zone. At least one hole in the first zone is closed.

Devices and methods for controlling wafer uniformity in plasma-based process

Devices and methods for controlling wafer uniformity using a gas baffle plate are disclosed. In one example, a device for plasma-based processes is disclosed. The device includes: a housing defining a process chamber and a baffle plate arranged above a wafer in the process chamber. The baffle plate is configured to control plasma distribution on the wafer. The baffle plate has a shape of an annulus that comprises a first annulus sector and a second annulus sector. The first annulus sector has a first inner radius. The second annulus sector has a second inner radius that is different from the first inner radius.

Baffle plate for controlling wafer uniformity and methods for making the same

A method for etching a tungsten silicide (WSix) layer during formation of a gate electrode in an integrated circuit is disclosed. The method uses an etchant gas comprising nitrogen gas (N) and oxygen gas (O) in a specified flow ratio. The etchant gas may also comprise chlorine gas (Cl) and tetrafluoromethane (CF). The selectivity of the etchant gas containing Ofor WSix versus polysilicon is much higher, which reduces overetching and provides more control in methods for producing a gate electrode. A gate electrode produced by such a method is also disclosed.

Etching methods for integrated circuits

Methods and systems for uniformly cooling a dome within a plasma treatment system are disclosed. The methods and systems utilize a diffuser including a perforated plate and a cone. The perforated plate includes a center portion and multiple arrays of holes with each array being located circumferentially at a different distance from the center. The cone extends away from the center. The diffuser spreads cooling gas more uniformly across the surface of the dome.

Methods and systems for cooling plasma treatment components

The present disclosure relates a lithographic substrate marking tool. The tool includes a first electromagnetic radiation source disposed within a housing and configured to generate a first type of electromagnetic radiation. A radiation guide is configured to provide the first type of electromagnetic radiation to a photosensitive material over a substrate. A second electromagnetic radiation source is disposed within the housing and is configured to generate a second type of electromagnetic radiation that is provided to the photosensitive material.

Apparatus for lithographically forming wafer identification marks and alignment marks

A method of fabricating a semiconductor structure including the following steps is provided. A mask layer is formed on a semiconductor substrate. The semiconductor substrate revealed by the mask layer is anisotropically etched until a cavity is formed in the semiconductor substrate, wherein anisotropically etching the semiconductor substrate revealed by the mask layer comprises performing a plurality of first cycles and performing a plurality of second cycles after performing the first cycles, each cycle among the first and second cycles respectively includes performing a passivating step and performing an etching step after performing the passivating step. During the first cycles, a first duration ratio of the etching step to the passivating step is variable and ramps up step by step. During the second cycles, a second duration ratio of the etching step to the passivating step is constant, and the first duration ratio is less than the second duration ratio.

Method of fabricating semiconductor structure

A method for making a semiconductor device is disclosed. A substrate comprising semiconductor device elements is provided. A top conductive pad and an anti-reflective coating are patterned over the substrate. The anti-reflective coating is disposed on the top conductive pad. At least one passivation film is formed over the substrate and the anti-reflective coating. The at least one passivation film and the anti-reflective coating are etched to form a trench therein so as to expose a portion of the top conductive pad.

Method of forming a semiconductor device comprising top conductive pads

Methods for manufacturing MEMS structures are provided. The method for manufacturing a microelectromechanical system (MEMS) structure includes etching a MEMS substrate to form a first trench and a second trench and etching the MEMS substrate through the first trench and the second trench to form a first through hole and an extended second trench. The method for manufacturing a MEMS structure further includes etching the MEMS substrate through the extended second trench to form a second through hole. In addition, a height of the first trench is greater than &#xbe; of a height of the MEMS substrate, and a height of the second trench is smaller than &#x2154; of the height of the MEMS substrate.

Method for manufacturing microelectromechanical system structure having a cavity and through-holes of different widths

In some embodiments, the present disclosure relates a lithographic substrate marking tool. The lithographic substrate marking tool has a first lithographic exposure tool arranged within a shared housing and configured to generate a first type of electromagnetic radiation during a plurality of exposures. A mobile reticle has a plurality of different reticle fields respectively configured to block a portion of the first type of electromagnetic radiation to expose a substrate identification mark within a photosensitive material overlying a semiconductor substrate. A transversal element is configured to move the mobile reticle so that separate ones of the plurality of reticle fields are exposed onto the photosensitive material during separate ones of the plurality of exposures. The mobile reticle therefore allows for different strings of substrate identification marks to be formed within the photoresistive material using a same reticle, thereby economically providing the benefits of lithographic substrate marking.

Lithography engraving machine for forming water identification marks and aligment marks

The present disclosure relates a method of forming substrate identification marks. In some embodiments, the method may be performed by forming a photosensitive material over a substrate. A first type of electromagnetic radiation is selectively provided to the photosensitive material to expose a plurality of substrate identification marks within the photosensitive material, and a second type of electromagnetic radiation is selectively provided to the photosensitive material to expose one or more alignment marks within the photosensitive material. Exposed portions of the photosensitive material are removed to form a patterned photosensitive material. The substrate is etched according to the patterned photosensitive material to form recesses within the substrate that are defined by the plurality of substrate identification marks and the one or more alignment marks.

Method for lithographically forming wafer identification marks and alignment marks

Methods for manufacturing MEMS structures are provided. The method includes forming a first trench and a second trench in a MEMS substrate by performing a main etching process and etching the MEMS substrate through the first trench and the second trench to form a first through hole and an extended second trench by performing a first step of an over-etching process. The method further includes etching the MEMS substrate through the extended second trench to form a second through hole by performing a second step of the over-etching process. In addition, a width of the first trench is greater than a width of the second trench, and a height of the first trench is greater than &#xbe; of a height of the MEMS substrate, and a height of the second trench is smaller than &#x2154; of the MEMS substrate.

A method for forming a micro-electro-mechanical system (MEMS) device structure is provided. The method includes forming a second substrate over a first substrate, and a cavity is formed between the first substrate and the second substrate. The method includes forming a hole through the second substrate using an etching process, and the hole is connected to the cavity. The etching process includes a plurality of etching cycles, and each of the etching cycles includes an etching step, and the etching step has a first stage and a second stage. The etching time of each of the etching steps during the second stage is gradually increased as the number of etching cycles is increased.

Method for forming micro-electro-mechanical system (MEMS) device structure

Growing community of inventors

Hsinchu, Taiwan

Chih-Hsien Hsu