Taiwan Semiconductor Manufacturing Comp. Ltd.

Chih-Hsiang Huang

Shih-Hao Lin

Chih-Chuan Yang

Hsin-Wen Su

Szu-Chi Yang

Shang-Rong Li

Feng-Cheng Yang

Chia-Pin Lin

Da-Wen Lin

Chih-Hsuan Chen

Bwo-Ning Chen

Chong-De Lien

Cha-Hon Chou

Ping-Wei Wang

Chung-Cheng Wu

Jui-Lin Chen

Tzu-Hsiang Hsu

Li-Ping Huang

Ming-Shuan Li

Wen-Chun Keng

Haiting Wang

Ka Hing Fung

A method of manufacturing a semiconductor device includes forming a fin, the fin having an epitaxial portion and a base portion protruding from a substrate. Sidewalls of the base portion are tapered with respect to sidewalls of the epitaxial portion. The method also includes depositing a polymeric material on the sidewalls of the epitaxial portion, performing an etching process to modify a profile of the sidewalls of the base portion, such that the sidewalls of the base portion are laterally recessed with a narrowest width of the base portion located under a top surface of the base portion, removing the polymeric material from the sidewalls of the epitaxial portion, depositing an isolation feature on the sidewalls of the base portion, and forming a gate structure engaging the epitaxial portion.

Semiconductor device with leakage current suppression and method of forming the same

A semiconductor device and a method of forming the same are provided. In an embodiment, an exemplary semiconductor device includes a vertical stack of channel members disposed over a substrate, a gate structure wrapping around each channel member of the vertical stack of channel members, and a source/drain feature disposed over the substrate and coupled to the vertical stack of channel members, the source/drain feature comprising an undoped bottom layer and a doped upper layer, where a part of the undoped bottom layer of the source/drain feature is disposed directly under the gate structure.

Source/drain features for multi-gate device and method of fabricating thereof

A method of fabricating a device includes providing a fin element in a device region and forming a dummy gate over the fin element. In some embodiments, the method further includes forming a source/drain feature within a source/drain region adjacent to the dummy gate. In some cases, the source/drain feature includes a bottom region and a top region contacting the bottom region at an interface interposing the top and bottom regions. In some embodiments, the method further includes performing a plurality of dopant implants into the source/drain feature. In some examples, the plurality of dopant implants includes implantation of a first dopant within the bottom region and implantation of a second dopant within the top region. In some embodiments, the first dopant has a first graded doping profile within the bottom region, and the second dopant has a second graded doping profile within the top region.

Multi-gate device and related methods

A method comprises forming a first fin including alternating first channel layers and first sacrificial layers and a second fin including alternating second channel layers and second sacrificial layers, forming a capping layer over the first and the second fin, forming a dummy gate stack over the capping layer, forming source/drain (S/D) features in the first and the second fin, removing the dummy gate stack to form a gate trench, removing the first sacrificial layers and the capping layer over the first fin to form first gaps, removing the capping layer over the second fin and portions of the second sacrificial layers to from second gaps, where remaining portions of the second sacrificial layers and the capping layers form a threshold voltage (V) modulation layer, and forming a metal gate stack in the gate trench, the first gaps, and the second gaps.

Semiconductor devices with threshold voltage modulation layer

Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary method comprises forming first and second semiconductor fins in first and second regions of a substrate, respectively; forming first and second dummy gate stacks over the first and second semiconductor fins, respectively, and forming a spacer layer over the first and the second dummy gate stacks; forming a first pattern layer with a thickness along the spacer layer in the first region; form a first source/drain (S/D) trench along the first pattern layer and epitaxially growing a first epitaxial feature therein; removing the first pattern layer to expose the spacer layer; forming a second pattern layer with a different thickness along the spacer layer in the second region; form a second S/D trench along the second pattern layer and epitaxially growing a second epitaxial feature therein; and removing the second pattern layer to expose the spacer layer.

Semiconductor device with tunable epitaxy structures and method of forming the same

A method includes following steps. A semiconductor fin is formed extending from a substrate. A gate structure is formed extending across the semiconductor fin. Recesses are etched in the semiconductor fin. Source/drain epitaxial structures are formed in the recesses in the semiconductor fin. Formation of each of the source/drain epitaxial structures comprises performing a first epitaxy growth process to form a bar-shaped epitaxial structure in one of the recesses, and performing a second epitaxy growth process to form a cladding epitaxial layer cladding on the bar-shaped epitaxial structure. The bar-shaped epitaxial structure has a lower phosphorous concentration than the cladding epitaxial layer.

Mechanisms for growing epitaxy structure of finFET device

A semiconductor structure includes a gate structure disposed over a substrate, and a plurality of source/drain features disposed on the substrate and interposed by the gate structure. Each of the source/drain features includes a first doped source/drain region extended away from the substrate, and a second doped source/drain region disposed on top and side surfaces of the first doped source/drain region, in which a phosphorus doping concentration of the first doped source/drain region is lower than a doping concentration of the second doped source/drain region.

A method comprises forming a first fin and a second fin over a substrate, wherein the first fin and the second fin are separated by a trench, applying a first pre-amorphous implantation (PAI) process to the substrate and forming a first PAI region underlying the trench as a result of the first PAI process, depositing a first tensile film layer on sidewalls and a bottom of the trench, converting the first PAI region into a first dislocation plane underlying the trench using a first anneal process and forming an isolation region over the first dislocation plane.

FinFET with multiple dislocation planes and method for forming the same

A device comprises a first semiconductor fin over a substrate, a second semiconductor fin over the substrate, wherein the first semiconductor fin and the second semiconductor fin are separated by a first isolation region, a first drain/source region coupled to the first semiconductor fin and the second semiconductor fin and a first dislocation plane underlying the first isolation region, wherein the first dislocation plane extends in a first direction in parallel with a longitudinal axis of the first semiconductor fin.

The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a gate over a substrate. The method includes performing a first implantation process to form a first doped region in the substrate, the first doped region being adjacent to the gate. The method includes performing a second implantation process to form a second doped region in the substrate, the second doped region being formed farther away from the gate than the first doped region, the second doped region having a higher doping concentration level than the first doped region. The method includes removing portions of the first and second doped regions to form a recess in the substrate. The method includes epitaxially growing a third doped region in the recess, the third doped region having a higher doping concentration level than the second doped region.

Semiconductor device having gradient doping profile

An integrated circuit device includes a gate region extending above a semiconductor substrate and extending in a first longitudinal direction. A first fin has a first sidewall that extends in a second longitudinal direction above the semiconductor substrate such that the first fin intersects the gate region. A second fin has a second sidewall extending in the second direction above the semiconductor substrate such that the second fin intersects the gate region. A shallow trench isolation (STI) region is formed in the semiconductor substrate between the first and second sidewalls of the first and second fins. A conductive layer disposed over the first insulating layer and over top surfaces of the first and second fins. A first insulating layer is disposed between an upper surface of the STI region and a lower surface of the conductive layer to separate the STI region from the conductive layer.

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Zhubei, Taiwan

Chih-Hsiang Huang