Nan Ya Technology Corporation

Chih-How Chang

Sheng-Wei Yang

Wen-Sheng Liao

Chung-Yuan Lee

Chang-Rong Wu

Neng-Tai Shih

Chien-Mao Liao

Chen-Chou Huang

Tzu-En Ho

Sheng-Tsung Chen

A method for forming a trench isolation. A semiconductor substrate with an opening is provided, on which a mask layer is formed. A first insulating layer is conformably formed on the semiconductor substrate and the trench, and the trench is filled with the first insulating layer. The first insulating layer is anisotropically etched to below the semiconductor substrate. A second insulating layer is formed on the semiconductor substrate and the trench. The second insulating layer is planarized to expose the mask layer.

Method for fabricating trench isolation

A method of fabricating a trench isolation with high aspect ratio. The method comprises the steps of: providing a substrate with a trench; depositing a first isolation layer filling the trench by low pressure chemical vapor deposition; etching the first isolation layer so that its surface is lowered to the opening of the trench; depositing a second isolation layer to fill the trench without voids by high density plasma chemical vapor deposition and achieving global planarization by chemical-mechanical polishing then providing a rapidly annealing procedure. Accordingly, the present invention achieves void-free trench isolation with high aspect ratio.

Method for fabricating trench isolations with high aspect ratio

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Taipei, Taiwan

Chih-How Chang