Micron Technology Incorporated

Tsinghua University

National Yang Ming Chiao Tung University

Chih Hong Wang

Jungbae Lee

Jwo-Huei Jou

Po Chih Yang

Chih-Wei Luo

Po Chen Kuo

Jih-Perng Leu

Shu-Hao Syu

Hung-En Tu

Jihperng Leu

Semiconductor devices including continuous-core connectors and associated systems and methods are disclosed herein. The continuous-core connectors each include a peripheral wall that surrounds an inner-core configured to provide an electrical path using uniform material.

Apparatus including solder-core connectors and methods of manufacturing the same

Underfill materials with graded moduli for semiconductor device assemblies, and associated methods and systems are disclosed. In one embodiment, the underfill material between a semiconductor die and a package substrate includes a matrix material, first filler particles with a first size distribution, and second filler particles with a second size distribution different than the first size distribution. Centrifugal force may be applied to the underfill material to arrange the first and second filler particles such that the underfill material may form a first region having a first elastic modulus and a second region having a second elastic modulus different than the first elastic modulus. Once the underfill material is cured, portions of conductive pillars coupling the semiconductor die with the package substrate may be surrounded by the first region, and conductive pads of the package substrate may be surrounded by the second region.

Semiconductor device assembly with graded modulus underfill and associated methods and systems

An electroluminescent device includes: a substrate; an electroluminescent layered structure disposed over the substrate and including first and second electrode layers and an electroluminescent material layer disposed between the first and second electrode layers; and a moisture barrier layer in contact with the electroluminescent layered structure for preventing moisture from diffusing into the electroluminescent layered structure. The moisture barrier layer includes at least two inorganic films of a silicon-nitrogen-containing compound and at least one polymer film interposed between the inorganic films.

Electroluminescent device including moisture barrier layer

A simple method is developed in the present invention for fabricating periodic ripple microstructures on the surface of an ITO film by using single-beam femtosecond laser pulses. The periodic ripple microstructures composed of self-organized nanodots can be directly fabricated through the irradiation of the femtosecond laser, without scanning. The ripple spacing of &#x2dc;800 nm, &#x2dc;400 nm and &#x2dc;200 nm observed in the periodic ripple microstructures can be attributed to the interference between the incident light and the scattering light of the femtosecond laser from the surface of the ITO film. In the present invention, the self-organized dots are formed by the constructive interference formed in the surface of the ITO film, where includes higher energy to break the In&#x2014;O and Sn&#x2014;O bonds and then form the In&#x2014;In bonds. Therefore, the dots have higher surface current greater than other disconstructive regions of the ITO film.

Method for forming superior local conductivity in self-organized nanodots of transparent conductive film by femtosecond laser

Growing community of inventors

Taichung, Taiwan

Chih Hong Wang