Taiwan Semiconductor Manufacturing Comp. Ltd.

Amazing Microelectronic Corporation

Dell Products Inc.

Shenzhen China Star Optoelectronics Technology Co., Ltd.

Academia Sinica

Lite-on It Corporation

National Health Research Institutes

Chih-Hao Chen

Li-Hui Cheng

Szu-Wei Lu

Pu Wang

Chin-Fu Kao

Chih-Chien Pan

Po-Yuan Cheng

Ryan Hsin-Chin Jiang

Ping-Yin Hsieh

Ying-Ching Shih

James Jeng-Jie Peng

Yi-Huan Liao

Hung-Yu Chen

Wen-Chih Chiou

Chih-Chiang Chang

Chuan Shih

Chiung-Tong Chen

Cheng-Fu Lee

Cho-Yi Lin

Wen-Pin Huang

Hwei-Jiung Wang

Tang-Kuei Tseng

Kai-Fa Huang

Han-Chang Lin

Erh-Chieh Chang

Szu-Hsien Wu

Wu-Jen Lo

Ming-Hsing Lu

A semiconductor package including two different adhesives and a method of forming are provided. The semiconductor package may include a package component having a semiconductor die bonded to a substrate, a first adhesive over the substrate, a heat transfer layer on the package component, and a lid attached to the substrate by a second adhesive. The first adhesive may encircle the package component and the heat transfer layer. The lid may include a top portion on the heat transfer layer and the first adhesive, and a bottom portion attached to the substrate and encircling the first adhesive. A material of the second adhesive may be different from a material of the first adhesive.

Semiconductor package and method

A semiconductor device includes a substrate, a package structure, a thermal interface material (TIM) structure, and a lid structure. The package structure is disposed on the substrate. The TIM structure is disposed on the package structure. The TIM structure includes a metallic TIM layer and a non-metallic TIM layer in contact with the metallic TIM layer, and the non-metallic TIM layer surrounds the metallic TIM layer. The lid structure is disposed on the substrate and the TIM structure.

Semiconductor device and manufacturing method thereof

In an embodiment, a device includes: a package component including an integrated circuit die and conductive connectors connected to the integrated circuit die, the conductive connectors disposed at a front-side of the package component, the integrated circuit die exposed at a back-side of the package component; a heat dissipation layer on the back-side of the package component and on sidewalls of the package component; an adhesive layer on a back-side of the heat dissipation layer, a portion of a sidewall of the heat dissipation layer being free from the adhesive layer; and a package substrate connected to the conductive connectors.

Heat dissipation structures for integrated circuit packages and methods of forming the same

A manufacturing method of a package structure includes: forming a first package component over a temporary carrier, wherein the first package component comprises a semiconductor die encapsulated by an insulating encapsulation material that comprises a base layer and a plurality of fillers inside the base layer; de-bonding the temporary carrier to expose a rear side of the semiconductor die, wherein during the de-bonding, a portion of the fillers is accessibly revealed from the base layer to form an insulating encapsulation; forming a metallic layer on the rear side of the semiconductor die and the portion of the fillers of the insulating encapsulation; and coupling a heat dissipating component to the first package component at least through the metallic layer.

Package structure and manufacturing method thereof

Provided are a package structure and a method of forming the same. The package structure includes a first die, a second die group, an interposer, an underfill layer, a thermal interface material (TIM), and an adhesive pattern. The first die and the second die group are disposed side by side on the interposer. The underfill layer is disposed between the first die and the second die group. The adhesive pattern at least overlay the underfill layer between the first die and the second die group. The TIM has a bottom surface being in direct contact with the first die, the second die group, and the adhesive pattern. The adhesive pattern separates the underfill layer from the TIM.

Adhesive and thermal interface material on a plurality of dies covered by a lid

A package structure includes first and second package components, an underfill layer disposed between the first and second package components, and a metallic layer. The first package component includes semiconductor dies, a first insulating encapsulation laterally encapsulating the semiconductor dies, and a redistribution structure underlying first surfaces of the semiconductor dies and the first insulating encapsulation. The second package component underlying the first package component is electrically coupled to the semiconductor dies through the redistribution structure. The underfill layer extends to cover a sidewall of the first package component, the metallic layer overlying second surfaces of the semiconductor dies and the first insulating encapsulation, and a peripheral region of the second surface of the first insulating encapsulation is accessibly exposed by the metallic layer, where the first surfaces are opposite to the second surfaces. A manufacturing method of a package structure is also provided.

Package structure with metallic layer over the surfaces of a plurality of semiconductor dies

A jig for manufacturing a semiconductor package includes a bottom piece and an upper piece. The bottom piece includes a base, a support plate, and at least one elastic connector. The support plate is located in a central region of the base. The at least one elastic connector is interposed between the support plate and the base. The upper piece includes a cap and outer flanges. The cap overlays the support plate when the upper piece is disposed on the bottom piece. The outer flanges are disposed at edges of the cap, connected with the cap. The outer flanges contact the base of the bottom piece when the upper piece is disposed on the bottom piece. The cap includes an opening which is a through hole. When the upper piece is disposed on the bottom piece, a vertical projection of the opening falls entirely on the support plate.

Manufacturing method of semiconductor package using jig

A structure includes a circuit substrate, a device, a metal layer, a lid and a thermal interface material layer. The device is disposed on and electrically connected to the circuit substrate. The device includes at least one semiconductor die laterally encapsulated by an insulating encapsulation. The metal layer is covering a back surface of the at least one semiconductor die and the insulating encapsulation. The lid is disposed on the circuit substrate, and the lid is adhered to the metal layer through the thermal interface material layer.

Method of fabricating package structure

A method for forming a package structure is provided. The method includes bonding a package component to a substrate through a plurality of first connectors. The package component comprises a first semiconductor die and a second semiconductor die. The method also includes forming a dam structure over the substrate and surrounding the first connectors. A top surface of the dam structure is lower than a bottom surface of the package component. The method further includes filling an underfill layer in a space between the dam structure and the first connectors. In addition, the method includes removing the dam structure after the underfill layer is formed.

Method for forming package structure

Semiconductor devices and methods of manufacture are provided, in which an adhesive is removed from a semiconductor die embedded within an encapsulant, and an interface material is utilized to remove heat from the semiconductor device. The removal of the adhesive leaves behind a recess adjacent to a sidewall of the semiconductor, and the recess is filled.

Semiconductor devices and methods of manufacture

A method of forming a semiconductor structure includes: attaching a semiconductor device to a first surface of a substrate; placing a thermal interface material (TIM) film over a first side of the semiconductor device distal from the substrate, where the TIM film is pre-formed before the placing, where after the placing, a peripheral portion of the TIM film extends laterally beyond sidewalls of the semiconductor device; and attaching a lid to the first surface of the substrate to form an enclosed space between the lid and the substrate, where after attaching the lid, the semiconductor device and the TIM film are disposed in the enclosed space, where a first side of the TIM film distal from the substrate contacts the lid.

High efficiency heat dissipation using thermal interface material film

A package structure includes a first semiconductor die, a first insulating encapsulation, a thermal coupling structure, and a heat dissipating component thermally coupled to the first semiconductor die through the thermal coupling structure. The first semiconductor die includes an active side, a rear side, and a sidewall connected to the active side and the rear side. The first insulating encapsulation extends along the sidewall of the first semiconductor die and includes a first side substantially leveled with the active side, a second side opposite to the first side, and topographic features at the second side. The thermal coupling structure includes a metallic layer overlying and the rear side of the first semiconductor die and the topographic features of the first insulating encapsulation. A manufacturing method of a package structure is also provided.

A semiconductor package includes a redistribution structure, a plurality of semiconductor devices, and a plurality of heat dissipation films. The plurality of semiconductor devices mounted on the redistribution structure. The plurality of heat dissipation films are respectively disposed on and jointly covering upper surfaces of the plurality of semiconductor devices. A plurality of trenches are respectively extended between each two of the plurality of heat dissipations and extended between each two of the plurality of semiconductor devices.

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Taipei, Taiwan

Chih-Hao Chen