United Microelectronics Corp.

Realtek Semiconductor Inc.

Primax Electronics Ltd.

Chih-Chien Chang

Shen-De Wang

Jianjun Yang

Cheng-Hua Yang

Yuan-Hsiang Chang

Chih-Chung Wang

Shih-Wei Wang

Ke-Feng Lin

Wei-Lin Chen

Chiu-Te Lee

Liang Yi

Wei Ta

Yi-Shan Chiu

Hsiang-An Yang

Yu-Cheng Tung

Shih-Hsiung Huang

Cheng-Cheng Yen

Zhen Chen

Hui Ying Yang

Weichang Liu

Wei-Chou Wang

Chiu-Ling Lee

Aaron Chen

Linggang Fang

Chow Yee Lim

Hou-Ching Chin

Fan-Chi Meng

Che-Jung Hsu

Kok Wun Tan

Zhi Qiang Mu

Yong Bin Fan

Wen-Chuan Chang

A power device includes a substrate, an ion well in the substrate, a body region in the ion well, a source doped region in the body region, a drain doped region in the ion well, and gates on the substrate between the source doped region and the drain doped region. The gates include a first gate adjacent to the source doped region, a second gate adjacent to the drain doped region, and a stacked gate structure between the first gate and the second gate.

Power device and fabrication method thereof

A semiconductor device includes a semiconductor substrate, a gate structure, a source region, a drain region, a first oxide layer, a field plate, and a second oxide layer. The gate structure is disposed on the semiconductor substrate. The source region and the drain region are disposed in the semiconductor substrate and located at two opposite sides of the gate structure respectively. The first oxide layer includes a first portion disposed between the gate structure and the semiconductor substrate and a second portion disposed between the gate structure and the drain region. The field plate is partly disposed above the gate structure and partly disposed above the second portion of the first oxide layer. The second oxide layer includes a first portion disposed between the field plate and the gate structure and a second portion disposed between the field plate and the second portion of the first oxide layer.

Semiconductor device

A multi-stage switched capacitor circuit and an operation method thereof are provided. The multi-stage switched capacitor circuit includes a first operational stage, a second operational stage and a third operational stage that are serially connected in order. Each operational stage operates in a sample phase or a hold phase and generates a detection signal indicating an end of the hold phase. The operation method of the multi-stage switched capacitor circuit includes: controlling the second operational stage to operate in the hold phase when the detection signal of the first operational stage indicates the end of the hold phase of the first operational stage, and the detection signal of the third operational stage indicates the end of the hold phase of the third operational stage.

Multi-stage switched capacitor circuit and operation method thereof

A manufacturing method of a semiconductor device includes: providing a substrate having memory and high voltage regions; sequentially forming a floating gate layer and a hard mask layer on the substrate; patterning the hard mask layer to form a first opening exposing a portion of the floating gate layer in the range of the memory region; patterning the hard mask layer and the floating gate layer to form a second opening overlapped with the high voltage region; performing a first thermal growth process to simultaneously form a first oxide structure on the portion of the floating gate layer exposed by the first opening, and to form a second oxide structure on a portion of the substrate overlapped with the second opening; removing the hard mask layer; and patterning the floating gate layer by using the first oxide structure as a mask.

Manufacturing method of semiconductor device

A method of manufacturing FinFET semiconductor devices in memory regions and logic regions includes the steps of forming a first gate material layer on a substrate and fins, patterning the first gate material layer to form a control gate, forming a second gate material layer on the substrate and fins, performing an etch process to the cell region so that the second gate material layer in the cell region is lower than the second gate material layer in the peripheral region, patterning the second gate material layer to form a select gate in the cell region and a dummy gate in the logic region respectively.

FinFET semiconductor device

A nonvolatile memory cell includes a substrate having a drain region, a source region, and a channel region between the drain region and the source region. A floating gate and a select gate are disposed on the channel region. A control gate is disposed on the floating gate. An erase gate is disposed on the source region. The erase gate includes a lower end portion that extends into a major surface of the substrate.

Nonvolatile memory cell and fabrication method thereof

A manufacturing method of a semiconductor structure includes the following steps. A first polysilicon layer is formed on a substrate. A planarization process to the first polysilicon layer is performed. A first etching back process to the first polysilicon layer is performed after the planarization process. A second etching back process to the first polysilicon layer is performed after the first etching back process. A first wet clean process to the first polysilicon layer is performed after the first etching back process and before the second etching back process.

Manufacturing method of semiconductor structure

A low dropout regulator includes a PMOS power transistor, a feedback network, an error amplifier and an active enhanced PSRR unit. The PMOS power transistor has a first end coupled to an input voltage, and a second end coupled to a load and the feedback network. The error amplifier receives a feedback signal generated from the feedback network, compares the feedback signal with a reference voltage to generate a difference value, and amplifies the difference value to generate an error signal. The active enhanced PSRR unit has one end coupled to the first end, and another end coupled to a control end of the PMOS power transistor and the error amplifier, detects an input voltage of the first end, and correspondingly adjusts a voltage of the control end to stabilize a voltage between the control end and the first end according to a variation of the input voltage.

Low dropout regulator with PMOS power transistor

The present invention provides a memory cell, which includes a substrate, a gate dielectric layer, a patterned material layer, a selection gate and a control gate. The gate dielectric layer is disposed on the substrate. The patterned material layer is disposed on the substrate, wherein the patterned material layer comprises a vertical portion and a horizontal portion. The selection gate is disposed on the gate dielectric layer and atone side of the vertical portion of the patterned material layer. The control gate is disposed on the horizontal portion of the patterned material layer and at another side of the vertical portion, wherein the vertical portion protrudes over a top of the selection gate. The present invention further provides another embodiment of a memory cell and manufacturing methods thereof.

Memory cell and manufacturing method thereof

A regulator includes a driving circuit, an amplifying circuit and an overvoltage protection circuit. The driving circuit is configured to receive an input voltage and provide an output voltage through an output terminal. The amplifying circuit is configured to control the driving circuit according to the output voltage. The overvoltage protection circuit is configured to conduct a first current from the output terminal of the overprotection circuit to a ground terminal. When the overvoltage protection circuit detects that a voltage level of a node coupled to the driving circuit is increased, the overvoltage protection circuit conducts a second current from the output terminal of the overprotection circuit to the ground terminal to lower the output voltage, in which the second current is larger than the first current.

Regulator

A regulator includes a driver circuit, an amplifier circuit, a first current source circuit and a second current source circuit. The driver circuit is configured to receive an input voltage and provide an output voltage. The first current source circuit is configured to provide a first current to the amplifier circuit. The second current source circuit is configured to provide a second current to the amplifier circuit according to the output voltage if the output voltage deviates from a predetermined voltage. The amplifier circuit is configured to control the driver circuit according to the output voltage and a third current, in which the third current is a sum of the first current and the second current.

A flash cell includes a gate and an erase gate. The gate is disposed on a substrate, wherein the gate includes a control gate on the substrate and a floating gate having a tip between the substrate and the control gate. The erase gate is disposed beside the gate, wherein the tip points toward the erase gate. The present invention also provides a flash cell forming process including the following steps. A gate is formed on a substrate, wherein the gate includes a floating gate on the substrate. An implantation process is performed on a side part of the floating gate, thereby forming a first doped region in the side part. At least a part of the first doped region is oxidized, thereby forming a floating gate having a tip.

Flash cell and forming process thereof

A manufacturing method of a semiconductor device includes the following steps. A plurality of select gates are formed on a memory region of a semiconductor substrate. Two charge storage structures are formed between two adjacent select gates. A source region is formed in the semiconductor substrate, and the source region is formed between the two adjacent select gates. An insulation block is formed between the two charge storage structures and formed on the source region. A memory gate is formed on the insulation block, and the memory gate is connected to the two charge storage structures.

Semiconductor device and manufacturing method thereof

A semiconductor structure comprises a substrate having a first conductive type; a deep well having a second conductive type formed in the substrate and extending down from a surface of the substrate; a first well having the first conductive type and a second well having the second conductive type both formed in the deep well and extending down from the surface of the substrate, and the second well spaced apart from the first well; a gate electrode formed on the substrate and disposed between the first and second wells; an isolation extending down from the surface of the substrate and disposed between the gate electrode and the second well; a conductive plug penetrating into the isolation and reaching the bottom thereof; and a first doping electrode region having the second conductive type, formed within the second well and below the isolation to connect the conductive plug.

Growing community of inventors

Hsinchu, Taiwan

Chih-Chien Chang