Taiwan Semiconductor Manufacturing Comp. Ltd.

Chih-Chiang Tu

Chun-Lang Chen

Jong-Yuh Chang

Hsin-Chang Lee

Tran-Hui Shen

Boming Hsu

San-De Tzu

Shih-Hao Yang

Wen-Hao Cheng

Chien-Chao Huang

Biow-Hiem Ong

Chien-Chih Chen

Yun-Yue Lin

Cheng-Ming Lin

Chi-Ming Tsai

Chi-Ta Lu

Chue San Yoo

Ching-Yueh Chen

Wei-Chung Hu

Tai-Bor Wu

Chien-Hung Lai

Chen-Shao Hsu

Ting-Chang Hsu

Jheng-Yuan Chen

Yu-Tung Chen

Rick Lai

Jon-Yiew Gan

Ru-Gun Liu

Chin-Hsiang Lin

Chia-Jen Chen

Pei-Cheng Hsu

Chun-Jen Chen

I-Hsiung Huang

Heng-Jen Lee

Chung-Min Fu

Shuo-Yen Chou

Chien-Cheng Chen

Kun-Lung Hsieh

Peng-Ren Chen

Chih-Chung Huang

Ming-Ho Tsai

Chia-Shih Lin

Wen-Hong Huang

Ching-Hung Lai

Chao-Chen Cheng

Yi-Fu Hsieh

Kuang-Yu Liu

Ajay Nandoriya

Chia-Shiung Tsai

Ping-Yin Liu

Chih-Cheng Lin

Chung-Hung Lin

Chia-Hui Lin

Chin-Lung Lin

Fei-Gwo Tsai

Dong-Hsu Cheng

Jia-Guei Jou

Ren-Guey Hsieh

Yi-Hsu Chen

Che-Yuan Chang

Jia-Jing Wang

Chia Hui Lin

Yi-Chiuan Luo

Hsiao Chih Chang

Hsin-Ying Lee

Yeou-Hsin Hsieh

Yu-Chin King

A reflection mode photomask includes a multilayer over a substrate. The reflection mode photomask further includes a plurality of absorber stacks over the multilayer. Each absorber stack of the plurality of absorber stacks includes an absorber layer, wherein a material of the absorber layer is selected from the group consisting of tantalum oxynitride and tantalum silicon oxynitride. Each absorber stack of the plurality of absorber stacks further includes an anti-reflective coating (ARC) layer on the absorber layer, wherein a material of the ARC layer is selected from the group consisting of tantalum nitride and tantalum silicon.

Reflection mode photomask

A photolithographic mask assembly according to the present disclosure accompanies a photolithographic mask. The photolithographic mask includes a capping layer over a substrate and an absorber layer disposed over the capping layer. The absorber layer includes a first main feature area, a second main feature area, and a venting feature area disposed between the first main feature area and the second main feature area. The venting feature area includes a plurality of venting features.

Mask defect prevention

A mask includes a reflective layer, an absorption layer and an absorption part. The absorption layer is disposed over the reflective multilayer. The absorption part is disposed in the reflective layer and the absorption layer, wherein an entire top surface of the absorption part is substantially flush with a top surface of the absorption layer.

Mask and method of forming the same

A pellicle includes a frame configured to attach to a photomask, wherein the frame includes a vent hole. The pellicle further includes a filter covering the vent hole, wherein the filter directly connects to an outer surface of the frame. The pellicle further includes a membrane extending over a top surface of the frame. The pellicle further includes a mount between the frame and the membrane, wherein the mount is attachable to the frame by an adhesive.

Pellicle having vent hole

A spin dry etching process includes loading an object into a dry etching system. A dry etching process is performed to the object, and the object is spun while the dry etching process is being performed. The spin dry etching process is performed using a semiconductor fabrication system. The semiconductor fabrication system includes a dry etching chamber in which a dry etching process is performed. A holder apparatus has a horizontally-facing slot that is configured for horizontal insertion of an etchable object therein. The etchable object includes either a photomask or a wafer. A controller is communicatively coupled to the holder apparatus and configured to spin the holder apparatus in a clockwise or counterclockwise direction while the dry etching process is being performed. An insertion of the etchable object into the horizontally-facing slot of the holder apparatus restricts a movement of the object as the dry etching process is performed.

System and method for performing spin dry etching

A method of manufacturing a reticle includes depositing an etch stop layer over a substrate; and depositing an absorber layer over the etch stop layer. The method further includes depositing a hard mask layer over the absorber layer, wherein the hard mask layer includes tantalum. The method includes patterning the hard mask layer. The method further includes performing a first etch process to remove a portion of the absorber layer underneath the patterned hard mask. The method includes performing a second etch process to partially remove a portion of a thickness of an etch stop layer underneath the removed portion of the absorber layer, wherein performing the third etch process comprises maintaining a remaining thickness of the etch stop layer underneath the removed portion of the absorber. The method further includes maintaining the remaining thickness of the etch stop layer through a termination of the method of manufacturing the reticle.

Reflection mode photomask and method of making

A mask includes a substrate, a reflective multilayer, an absorption layer and an absorption part. The substrate includes a mask image region and a mask frame region, wherein the mask frame region has a mask black border region adjacent to the mask image region. The reflective multilayer is disposed over the substrate. The absorption layer is disposed over the reflective multilayer. The absorption part is disposed in the reflective multilayer and the absorption layer and in the mask black border region, wherein an entire top surface of the absorption part is substantially flush with a top surface of the absorption layer.

Some embodiments relate to photomask for mask patterning. The photomask includes a transparent layer comprising quartz, and a molybdenum silicide (MoSi) layer overlying the transparent layer. A first shielding layer overlies the MoSi layer and has a first thickness and a first optical density. A second shielding layer overlies the first shielding layer and has a second thickness and a second optical density. The second thickness is less than one third of the first thickness, and the second optical density is less than one fourth of the first optical density. An overall optical density of the first and second shielding layers is at least 1.8.

Photomask having a plurality of shielding layers

A reflection mode photomask includes a substrate. The reflection mode photomask further includes a reflective multilayer over the substrate. The reflection mode photomask further includes a plurality of absorber stacks over the reflective multilayer, wherein each absorber stack of the plurality of absorber stacks has an etch stop layer, an absorber layer and an ARC layer, wherein a ratio of a thickness of the ARC layer to that of the etch stop layer is in a range from about 1:1 to about 1:2.5, and a sidewall roughness of each absorber stack of the plurality of absorber stacks is smaller than 3 nanometers (nm).

A photomask includes a transparent substrate and a shielding pattern disposed on the transparent substrate. The shielding pattern includes shielding island structures. The shielding island structures are separated from and spaced apart from one another by dividing lanes. The dividing lanes expose the underlying transparent substrate. The photomask is configured for a light of a wavelength, and the dividing lanes reduce or hinder a transmission of the light of the wavelength.

Photomask, photolithography system and manufacturing process

A method of removing a pellicle from a photomask includes removing a portion of a membrane from a pellicle frame, wherein the pellicle frame remains attached to the photomask following the removing of the portion of the membrane. The method further includes removing the pellicle frame from the photomask. The method further includes cleaning the photomask.

Pellicle removal method

Some embodiments pertain to a photomask for mask patterning. The photomask includes a phase shift layer overlying a transparent layer, a first shielding layer overlying the phase shift layer, and a second shielding layer overlying the first shielding layer. The first shielding layer has a first optical density, and the second shielding layer has a second optical density. The second optical density is less than the first optical density.

Masks and methods of forming the same are disclosed. The mask includes a substrate, a phase shift layer, a shading layer and a passivation layer. The phase shift layer is disposed over the substrate. The shading layer is disposed over the phase shift layer. The passivation layer is disposed over and in physical contact with the shading layer.

Masks and methods of forming the same

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Tauyen, Taiwan

Chih-Chiang Tu