Advanced Semiconductor Engineering, Inc.

Chih-Cheng Lee

Cheng-Lin Ho

Hsing Kuo Tien

Yuan-Chang Su

Li-Chuan Tsai

You-Lung Yen

Yu-Lin Shih

Chun Chen Chen

Wu Chou Hsu

Min-Yao Chen

Wen Hung Huang

Tien-Szu Chen

Yuanhao Yu

Chien-Mei Huang

Shih-Yu Wang

Li Chuan Tsai

Yuh-Shan Su

I-Ting Lin

Ming-Chiang Lee

Chun-Che Lee

Cheng Yuan Chen

Po-Shu Peng

Yuan Chang Su

Chung-Ming Wu

Chih-Pin Hung

Ho-Ming Tong

Kuang-Hsiung Chen

Sheng-Ming Wang

Yu-Ying Lee

Dao-Long Chen

Ya Fang Chan

Ying-Ta Chiu

Jiming Li

Yong-Da Chiu

Chai-Chi Lin

Kuang Hsiung Chen

Chung Chieh Chang

Chih-Yung Yang

Chen Yuang Chen

A semiconductor device package includes a carrier, an electronic component, a connection element and an encapsulant. The electronic component is disposed on a surface of the carrier. The connection element is disposed on the surface and adjacent to an edge of the carrier. The encapsulant is disposed on the surface of the carrier. A portion of the connection element is exposed from an upper surface and an edge of the encapsulant.

Semiconductor device package, electronic assembly and method for manufacturing the same

An electronic package is provided. The electronic package includes a first circuit structure, a second circuit structure, and an underfill. The second circuit structure is disposed over the first circuit structure. The underfill is disposed between the first circuit structure and the second circuit structure. An inner portion of the underfill has an inner lateral surface adjacent to and is substantially conformal with a lateral surface of the second circuit structure. A first top end of the inner lateral surface is not level with a top surface of the second circuit structure. An outer portion of the underfill has a second top end higher than the first top end.

Electronic package

The present disclosure provides a package substrate and method of manufacturing the same. The package substrate includes a substrate, an electronic component and a conductive trace. The electronic component is disposed in the substrate, and the electronic component includes a magnetic layer and a conductive wire. The conductive wire includes a first section embedded in the magnetic layer, and a second section connected to the first section and thinner than the first section. A first upper surface of the first section is covered by the magnetic layer, a second upper surface of the second section is lower than the first upper surface, and the magnetic layer includes a first recess disposed in the upper surface and exposing the second upper surface of the second section. The first conductive trace is in the first recess and electrically connected to the second upper surface of the second section of the conductive wire.

Package substrate, electronic device package and method for manufacturing the same

A semiconductor device package includes a first conductive structure, a stress buffering layer and a second conductive structure. The first conductive structure includes a substrate, at least one first electronic component embedded in the substrate, and a first circuit layer disposed on the substrate and electrically connected to the first electronic component. The first circuit layer includes a conductive wiring pattern. The stress buffering layer is disposed on the substrate. The conductive wiring pattern of the first circuit layer extends through the stress buffering layer. The second conductive structure is disposed on the stress buffering layer and the first circuit layer.

Semiconductor device package including stress buffering layer

A semiconductor device package includes a substrate and an antenna module. The substrate has a first surface and a second surface opposite to the first surface. The antenna module is disposed on the first surface of the substrate with a gap. The antenna module has a support and an antenna layer. The support has a first surface facing away from the substrate and a second surface facing the substrate. The antenna layer is disposed on the first surface of the support. The antenna layer has a first antenna pattern and a first dielectric layer.

Semiconductor device package and method of manufacturing the same

A substrate includes a first dielectric layer having a first surface and a second dielectric layer having a first surface disposed adjacent to the first surface of the first dielectric layer. The substrate further includes a first conductive via disposed in the first dielectric layer and having a first end adjacent to the first surface of the first dielectric layer and a second end opposite the first end. The substrate further includes a second conductive via disposed in the second dielectric layer and having a first end adjacent to the first surface of the second dielectric layer. A width of the first end of the first conductive via is smaller than a width of the second end of the first conductive via, and a width of the first end of the second conductive via is smaller than the width of the first end of the first conductive via.

Substrate, semiconductor device package and method of manufacturing the same

A semiconductor device package and method for manufacturing the same are provided. The semiconductor device package includes a first conductive structure, a stress buffering layer and a second conductive structure. The first conductive structure includes a substrate, and a first circuit layer disposed on the substrate. The first circuit layer includes a conductive wiring pattern, and the conductive wiring pattern is an uppermost conductive pattern of the first circuit layer. The stress buffering structure is disposed on the first conductive structure. The second conductive structure is disposed over the stress buffering structure. The conductive wiring pattern extends through the stress buffering structure and electrically connected to the second conductive structure, and an upper surface of the conductive wiring pattern is substantially coplanar with an upper surface of the stress buffering structure.

Semiconductor device package and method for manufacturing the same

A package substrate and manufacturing method thereof are provided. The package substrate includes a substrate and an electronic component. The substrate includes a cavity. The electronic component is disposed in the cavity. The electronic component includes a first region and a second region, and an optical recognition rate of the first region is distinct from that of the second region.

Package substrate and method for manufacturing the same

A semiconductor device, a semiconductor device package, and a method of manufacturing a semiconductor device package are provided. The semiconductor device includes an electronic component and a first protection layer. The electronic component includes a first conductive pad protruded out of a first surface of the electronic component. The first protection layer covers an external surface of the first conductive pad. The first surface of the electronic component is exposed from the first protection layer.

Semiconductor device, semiconductor device package and method of manufacturing the same

A semiconductor package structure and a method for manufacturing the same are provided. The semiconductor package structure includes a substrate, a chip and a dielectric structure. The substrate includes a first portion and a second portion surrounding the first portion. The second portion defines a cavity over the first portion. The chip includes a terminal on an upper surface of the chip. The dielectric structure fills the cavity and laterally encroaches over the upper surface of the chip. The dielectric structure is free from overlapping with the terminal of the chip.

Semiconductor package structure with dielectric structure covering upper surface of chip

A semiconductor device package includes a first circuit layer, a second circuit layer, a first semiconductor die and a second semiconductor die. The first circuit layer includes a first surface and a second surface opposite to the first surface. The second circuit layer is disposed on the first surface of the first circuit layer. The first semiconductor die is disposed on the first circuit layer and the second circuit layer, and electrically connected to the first circuit layer and the second circuit layer. The second semiconductor die is disposed on the second circuit layer, and electrically connected to the second circuit layer.

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Kaohsiung, Taiwan

Chih-Cheng Lee