Infineon Technologies Ag

Cree Gmbh

Infineon Technologies Austria Ag

Chiew Li Tai

Chii Shang Hong

Edmund Sales Cabatbat

Thomas Stoek

Jia Yi Wong

Wei Han Koo

Roland Rupp

Ivan Nikitin

Carsten Von Koblinski

Teck Sim Lee

Sanjay Kumar Murugan

Daniel Pedone

Matteo Piccin

Amirul Afiq Hud

Mohd Kahar Bajuri

Norbert Joson Santos

Kar Meng Ho

Gaylord Evangelista Cruz

Chin Wei Yang

A method for processing a semiconductor wafer is provided. A semiconductor wafer includes a first main surface and a second main surface. Defects are generated inside the semiconductor wafer to define a detachment plane parallel to the first main surface. Processing the first main surface defines a plurality of electronic semiconductor components. A glass structure is provided which includes a plurality of openings. The glass structure is attached to the processed first main surface, each of the plurality of openings leaving a respective area of the plurality of electronic semiconductor components uncovered. A polymer layer is applied to the second main surface and the semiconductor wafer is split into a semiconductor slice and a remaining semiconductor wafer by cooling the polymer layer beneath its glass transition temperature along the detachment plane. The semiconductor slice includes the plurality of electronic semiconductor components.

Method for processing a semiconductor wafer, semiconductor wafer, clip and semiconductor device

A semiconductor package includes a die pad having a die attach surface, a semiconductor die mounted on the die attach surface and having a first bond pad at an upper surface facing away from the die attach surface, an interconnect clip including a first segment which at least partially encloses a central opening, a second segment vertically offset and spaced apart from the first segment, and a support extending between the first segment and the second segment. The package further includes an electrically insulating encapsulant covering the semiconductor die. An upper surface of the first segment of the interconnect clip is exposed from a planar surface of the encapsulant. A lower surface of the second segment is flush against the upper surface of the semiconductor die and conductively connected to the first bond pad.

Semiconductor package with multi-level conductive clip for top side cooling

A semiconductor package includes a die pad having a die attach surface, a semiconductor die mounted on the die attach surface and having a first bond pad at an upper surface facing away from the die attach surface, an interconnect clip, having a first segment which at least partially encloses a central opening, a second segment vertically offset and spaced apart from the first segment, and one or more supports connected between the first segment and the second segment, and an electrically insulating encapsulant covering the semiconductor die. An upper surface of the first segment of the interconnect clip is exposed from an upper surface of the encapsulant. A lower surface of the second segment is flush against the first bond pad.

An example multi-branch terminal for an integrated circuit (IC) package is described herein. An example multi-branch terminal of an integrated circuit (IC), may include a first branch that may include an active bonding with a chip of the IC, wherein the active bonding may include a wire bonded to the chip of the IC; and a second branch that may include a passive bonding with the chip of the IC, wherein the passive bonding may include a capacitor bonded to the second branch and a first terminal of the IC.

Multi-branch terminal for integrated circuit (IC) package

A metal heat slug having an upper and lower surface is provided. First and second electrically conductive leads are provided. First and second electrically insulating fastening mechanisms are provided. The first and second fastening mechanisms are adhered to the upper surface of the heat slug in an outer peripheral region of the heat slug such that the first and second leads are vertically separated from and electrically insulated from the heat slug. The central die attach region is exposed from the first and second fastening mechanisms after adhering the first and second fastening mechanisms to the upper surface of the heat slug.

Rivetless lead fastening for a semiconductor package

A method of forming a semiconductor device package includes providing a lead frame having a peripheral structure and a heat slug having an upper and lower surface, the heat slug being attached to the peripheral structure. A semiconductor die is attached to the heat slug. The semiconductor die is encapsulated with a molding compound while the heat slug is attached to the peripheral structure. The heat slug is completely devoid of fasteners before the encapsulating.

Semiconductor package with heat slug and rivet free die attach area

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Melaka, Malaysia

Chiew Li Tai