Taiwan Semiconductor Manufacturing Comp. Ltd.

Chien-wei Lee

Yee-Chia Yeo

Kei-Wei Chen

Chun Hsiung Tsai

Chih-Chiang Chang

Chii-Horng Li

Chien-Chang Su

Chien-I Kuo

Lai-Wan Chong

Bang-Ting Yan

Yan-Ting Lin

Chih Teng Hsu

A method for manufacturing a nanosheet semiconductor device includes forming a poly gate on a nanosheet stack which includes at least one first nanosheet and at least one second nanosheet alternating with the at least one first nanosheet; recessing the nanosheet stack to form a source/drain recess proximate to the poly gate; forming an inner spacer laterally covering the at least one first nanosheet; and selectively etching the at least one second nanosheet.

Nanosheet semiconductor device and method for manufacturing the same

Present disclosure provides a FinFET structure, including a substrate, a fin protruding from the substrate, including a first portion and a second portion below the first portion, wherein the first portion includes a first dopant concentration of a dopant, and the second portion includes a second dopant concentration of the dopant, the second dopant concentration is greater than the first dopant concentration, a gate over the fin, wherein the second portion of the fin is below a bottom surface of the gate, and an insulating layer over the substrate and proximal to the second portion of the fin, wherein at least a first portion of the insulating layer includes a third dopant concentration of the dopant, the third dopant concentration is greater than the first dopant concentration.

FinFET structure and method for manufacturing thereof

Growing community of inventors

Hsinchu, Taiwan

Chien-wei Lee