Applied Materials, Inc.

Chien-Kang Hsiung

Arvind Sundarrajan

Yuichi Wada

Glen T Mori

Methods and apparatus for processing a substrate are provided herein. For example, the method can include depositing a first layer of metal on a first substrate; depositing a second layer of metal atop the first layer of metal; depositing a third layer of metal on a second substrate; depositing a fourth layer of metal atop the third layer of metal; and bringing the second layer of material into contact with the fourth layer of material under conditions sufficient to cause the first substrate to be bonded to the second substrate by a diffusion layer formed by portions of the first layer of metal diffusing through the second layer of metal and portions of the third layer of metal diffusing through the fourth layer of metal.

Methods and apparatus for processing a substrate

A wafer-level bridge die is affixed with an adhesive layer to a redistribution layer (RDL) that has been temporarily bonded to a carrier. Electrical interconnects are formed on the RDL and on the bridge die and encapsulated in a first mold layer. A plurality of dies are coupled to the RDL and the bridge die such that a die is electrically connected to at least one electrical interconnect of the RDL and to at least one electrical interconnect of the bridge die. A second mold layer is formed on the first mold layer to encapsulate the plurality of dies. The temporary bond is then broken and the carrier is removed, exposing the RDL connections.

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Taipei, Taiwan

Chien-Kang Hsiung