Taiwan Semiconductor Manufacturing Comp. Ltd.

Chien-Hong Chen

Cheng-Ting Chung

Jin Cai

Mahaveer Sathaiya Dhanyakumar

Kuan-Lun Cheng

Chung-Wei Wu

Hou-yu Chen

Semiconductor devices and methods of forming the same are provided. A method includes providing a workpiece having a semiconductor structure; depositing a two-dimensional (2D) material layer over the semiconductor structure; forming a source feature and a drain feature electrically connected to the semiconductor structure and the 2D material layer, wherein the source feature and drain feature include a semiconductor material; and forming a gate structure over the two-dimensional material layer and interposed between the source feature and the drain feature. The gate structure, the source feature, the drain feature, the semiconductor structure and the 2D material layer are configured to form a field-effect transistor. The semiconductor structure and the 2D material layer function, respectively, as a first channel and a second channel between the source feature and the drain feature.

2D-channel transistor structure with asymmetric substrate contacts

A method includes forming a dielectric layer over a substrate; forming a carbon nanotube (CNT) over the dielectric layer; forming a dummy gate structure over the CNT; forming gate spacers on opposite sidewalls of the dummy gate structure; forming source/drain epitaxy structures on opposite sides of the dummy gate structure and in contact with opposite sidewalls of the CNT; replacing the dummy gate structure with a metal gate structure; and forming source/drain contacts over the source/drain epitaxy structures, respectively.

Semiconductor device and method for forming the same

Growing community of inventors

Hsinchu County, Taiwan

Chien-Hong Chen