Taiwan Semiconductor Manufacturing Comp. Ltd.

Other

Pacific Speed Limited

Chien-Feng Lin

Shih-Wei Hung

Chia-Chiung Lo

Charng-Long Lu

Shahaji B More

Keng-Chu Lin

Cheng-Han Lee

Shih-Chieh Chang

Joung-Wei Liou

Chia-Hui Lin

Zheng-Yang Pan

Szu-An Wu

Ming-Te Chen

Wei-Jen Lo

Ching-Lun Lai

Shu Kuan

Kuan-Cheng Wang

Tsung-Hsun Yu

Jeng-Yang Pan

Ying-Hsiu Tsai

Cheng-Yu Huang

Chi-Yin Lin

Tsang-Yu Liu

Cheng-Liang Chang

Cheng-Min Chen

Chi-Cheng Chiou

Yin-Ping Lee

Chuan-Yi Lin

Chih Yung Hung

The present disclosure provides a semiconductor processing apparatus according to one embodiment. The semiconductor processing apparatus includes a chamber; a base station located in the chamber for supporting a semiconductor substrate; a preheating assembly surrounding the base station; a first heating element fixed relative to the base station and configured to direct heat to the semiconductor substrate; and a second heating element moveable relative to the base station and operable to direct heat to a portion of the semiconductor substrate.

Deposition equipment with adjustable temperature source

Methods are described that include providing a laser-based measurement tool. An implement of a semiconductor fabrication process tool (e.g., susceptor) is delivered to the laser-based measurement tool where a plurality of measurements is performed of a surface of the implement using a blue wavelength radiation. The measurements are of a distance (e.g., angstroms) from a reference plane and provide an indication of the profile of the surface of the susceptor. As the surface profile of the susceptor can affect layers deposited on target substrates using the susceptor, the measurements provide for a disposition of the susceptor.

Method for measurement of semiconductor device fabrication tool implement

Methods, and corresponding systems, are described that include providing a laser-based measurement tool. An implement of a semiconductor fabrication process tool (e.g., susceptor) is delivered to the laser-based measurement tool where a plurality of measurements is performed of a surface of the implement using a blue wavelength radiation. The measurements are of a distance (e.g., angstroms) from a reference plane and provide an indication of the profile of the surface of the susceptor. As the surface profile of the susceptor can affect layers deposited on target substrates using the susceptor, the measurements provide for a disposition of the susceptor.

System and method for measurement of semiconductor device fabrication tool implement

An apparatus for a semiconductor process includes an exhaust pipe coupled to a reaction chamber and a pump; a pressure control valve that is coupled to the exhaust pipe and configured to control a pressure value in the reaction chamber; a first pipe that is coupled to the exhaust pipe and etching gas source such that the first pipe is configured to provide an etching gas into the exhaust pipe; a second pipe that is coupled to the exhaust pipe and a radical generator such that the second pipe is configured to provide a radical into the exhaust pipe; and a third pipe that is coupled to the exhaust pipe and a diluted gas source such that the third pipe is configured to provide diluted gas into the exhaust pipe.

Advanced exhaust system

A method of forming a semiconductor structure includes the following operations: (i) forming a feature comprising germanium over a substrate; (ii) removing a portion of the feature such that an interior portion of the feature is exposed; (iii) exposing a surface of the exposed interior portion to a surrounding containing oxygen; and (iv) treating the germanium oxide on the surface of the exposed interior portion with a liquid containing water.

Method of forming a finFET structure with high quality EPI film

A control wafer making device, a method of measuring an epitaxy thickness in a control wafer, and a method for monitoring a control wafer are provided. In various embodiments, the control wafer making device includes a wafer substrate removing element and an epitaxy forming element. In various embodiments, a control wafer includes a substrate, a recess, a blocking layer, and an epitaxy. The substrate has a surface, and the recess is in the surface of the substrate. The blocking layer is over the surface of the substrate other than the recess. The epitaxy is in the recess. In various embodiments, the thickness of the epitaxy of the control wafer is measured by a polarized light.

Control wafer making device

A method for detecting the presence and location of defects over a substrate is disclosed. In an embodiment, the method may include: forming a semiconductor material in a plurality of openings in a reference wafer using an epitaxial growth process; performing one or more measurements on the reference wafer to obtain a baseline signal; forming a plurality of gate stacks and stressor regions in a plurality of substrates; after forming the plurality of gate stacks, forming the semiconductor material in a plurality of openings in a batch wafer; performing the one or more measurements on the batch wafer to obtain a batch signal; comparing the batch signal to the baseline signal; and determining whether a defect in present in the plurality of substrates based on the comparison.

Method for detecting presence and location of defects in a substrate

Control wafer making device and method for measuring and monitoring control wafer

The present disclosure provides a method forming a semiconductor device in accordance with some embodiments. The method includes receiving a substrate having a fin protruding through the substrate, wherein the fin is formed of a first semiconductor material, exposing the substrate in an environment including hydrogen radicals, thereby passivating the protruded fin using the hydrogen radicals, and epitaxially growing a cap layer of a second semiconductor material to cover the protruded fin.

Surface passivation for germanium-based semiconductor structure

A photoelectric lens module is utilized to focus a light source. A fabrication method comprises steps of providing a first substrate; positioning a plurality of gap units on the first substrate, and forming a plurality of gap regions amongst the gap units on the first substrate; providing a second substrate comprising a plurality of photoelectric lens units, in which the positions of the photoelectric lens units are corresponding to the locations of the gap regions; and filling a transparent rubber in the gap regions in such that the first substrate and the second substrate are adhered closely.

Photoelectric lens module and fabrication thereof

A high density plasma chemical vapor deposition process including exciting gas mixture to create a plasma including ions, and directing the plasma into a dense region above the upper surface of the semiconductor wafer, heating the wafer using an additional heat source, and allowing a material from the plasma to deposit onto the semiconductor wafer.

High aspect ratio gap fill application using high density plasma chemical vapor deposition

An algae cultivation apparatus includes a light guide plate, at least one transparent circulating channel, at least one light emission module, an algae guide-in module, an algae collection module, a gas guide-in module, a gas collection module, a culture medium guide-in module, a temperature control module and a pH value control module. With the installation of the light guide plate and at least one light emission module, a 24-hour light source can be introduced to improve the production efficiency of an algae.

Algae cultivation apparatus

A solar power generating device includes a solid cylindrical conductive body partially surround by a hollow cylindrical conducting layer with an insulating layer located between them, and a solar energy converter located at an end of the conductive body with two electrodes separately electrically connected to the conducting layer and the conductive body, so that the solar power generating device is configured as a plug-in module that could be very easily mounted to and dismounted from a circuit board.

Solar power generating device

A solar power generating device includes a first conductive body, a second conductive body and an insulating body sequentially disposed on the first conductive body, and a solar energy converting unit. The first conductive body has a conducting post upward projected from a hollow sleeve portion of the insulating body and a through opening of the second conductive body, so that a conducting section at a top of the conducting post is exposed at the insulating sleeve portion. The solar energy converting unit is mounted on the conducting section of the first conductive body and in electric contact with the second conductive body. With these arrangements, the solar power generating device may be mounted on a circuit board without the need of distinguishing the polarities of electrodes, and can therefore be easily mounted to and dismounted from the circuit board and be conveniently replaced when necessary.

A solar-tracking power generating apparatus includes a plurality of sensing units having a directional light-extraction member each, a plurality of solar batteries associated with a light-gathering device each, and a solar trajectory simulation unit. Therefore, the solar-tracking power generating apparatus enables more accurate tracking of solar position and focusing of more sunlight on the solar batteries, so that the solar batteries could absorb more sunlight and convert the same into an increased amount of electric power.

Growing community of inventors

Hsinchu, Taiwan

Chien-Feng Lin