Advanced Semiconductor Engineering, Inc.

Chieh-Chen Fu

Cheng-Nan Lin

I-Chia Lin

Kuo-Hsien Liao

Chi-Han Chen

Chang-Yu Lin

Ying-Te Ou

Kuo Hsien Liao

Meng-Wei Hsieh

Jr-Wei Lin

Kuo-Hua Chen

Kao-Ming Su

Che-Hau Huang

Chen Yuan Weng

Chang-Feng You

Chih-Jing Hsu

A semiconductor device package includes a first semiconductor device having a first surface, an interconnection element having a surface substantially coplanar with the first surface of the first semiconductor device, a first encapsulant encapsulating the first semiconductor device and the interconnection element, and a second semiconductor device disposed on and across the first semiconductor device and the interconnection element.

Semiconductor package device method of manufacturing the same

A device is provided. The device may be an optical device, a light coupling device, or a tunable light coupling device. The device includes a first portion, a lens, a light emitting element, and a waveguide. The first portion is disposed adjacent to a surface of a substrate and has a first side and a second side opposite to the first side. The light emitting element is disposed adjacent to the second side of the first portion. The lens is disposed adjacent to the first side of the first portion and between the light emitting element and the waveguide.

Device for communication

A semiconductor device package includes a carrier, an emitting device, a first building-up circuit and a first package body. The carrier has a first surface, a second surface opposite to the first surface and a lateral surface extending from the first surface to the second surface. The emitting element is disposed on the first surface of carrier. The first building-up circuit is disposed on the second surface of the carrier. The first package body encapsulates the lateral surface of the carrier.

Semiconductor device package and method of manufacturing the same

Semiconductor package device and method of manufacturing the same

The present disclosure provides a semiconductor package device and a method for manufacturing the same. In embodiments of the present disclosure, a semiconductor package device includes a carrier, a first antenna, a second antenna, a package body and a first shield. The carrier includes an antenna area and a component area. The first antenna is formed on the antenna area. The second antenna extends from the antenna area and over the first antenna. The second antenna is electrically connected to the first antenna. The package body includes a first portion covering the component area and a second portion covering the antenna area. The first shield is conformally formed on the first portion of the package body and exposes the second portion of package body.

A semiconductor device package includes: (1) a carrier; (2) an electronic component disposed over a top surface of the carrier; (3) a package body disposed over the top surface of the carrier and covering the electronic component; and (4) a shield layer, including a first magnetically permeable layer disposed over the package body, a first electrically conductive layer disposed over the first magnetically permeable layer, and a second magnetically permeable layer disposed over the first electrically conductive layer. The first electrically conductive layer is interposed between the first magnetically permeable layer and the second magnetically permeable layer. A permeability of the first electrically conductive layer is different from a permeability of the first magnetically permeable layer and a permeability of the second magnetically permeable layer.

A semiconductor device package includes a carrier, an electronic component disposed over a top surface of the carrier, and a package body disposed over the top surface of the carrier and covering the electronic component. The semiconductor device package further includes a shield layer, which in turn includes a first electrically conductive layer, a first magnetically permeable layer, and a second electrically conductive layer, where the first magnetically permeable layer is interposed between and directly contacts the first electrically conductive layer and the second electrically conductive layer.

A semiconductor device package includes a substrate, at least one component, a package body, a first conductive layer, a first shielding layer, a second shielding layer and a second conductive layer. The component is disposed on a first surface of the substrate. The package body is disposed on the first surface of the substrate and covers the component. The first conductive layer covers the package body and at least a portion of the substrate. The first shielding layer covers the first conductive layer and has a first thickness and includes a high conductivity material. The second shielding layer covers the first shielding layer and has a second thickness and includes a high permeability material. A ratio of the first thickness to the second thickness being in a range of 0.2 to 3. The second conductive layer covers the second shielding layer.

Semiconductor device packages

The present invention relates to a semiconductor device and a method for making the same. The semiconductor device includes a substrate, a first redistribution layer and a conductive via. The substrate has a substrate body and a pad. The pad and the first redistribution layer are disposed adjacent to the first surface of the substrate body, and electrically connected to each other. The interconnection metal is disposed in a through hole of the substrate body, and contacts the first redistribution layer. Whereby, the pad can be electrically connected to the second surface of the substrate body through the first redistribution layer and the conductive via.

Semiconductor device and method for manufacturing the same

A package structure with an embedded die includes a core layer, a first build-up wiring structure, and a second build-up wiring structure. The core layer has a first surface and a second surface opposite thereto. Besides, the core layer includes a first dielectric layer, a leadframe, a die, a first signal layer, and a second signal layer. The die is disposed on and electrically connected to the leadframe. The die and the leadframe are embedded in the first dielectric layer. The first signal layer is disposed on an upper surface of the first dielectric layer and electrically connected to the leadframe. The second signal layer is disposed on a bottom surface of the first dielectric layer and electrically connected to the leadframe. The first and the second build-up wiring structures are disposed on the first and the second surfaces of the core layer, respectively.

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Kaohsiung, Taiwan

Chieh-Chen Fu