Taiwan Semiconductor Manufacturing Comp. Ltd.

Chia-I Shen

Fei-Fan Chen

Joung-Wei Liou

Shih-Wen Huang

Chien Kuo Huang

Keng-Chu Lin

Yu-Yun Peng

Han-Ti Hsiaw

Chun-Hao Hsu

Wei-Fan Liao

Hua-Sheng Chiu

Wen-Sheng Wu

Chih-Yuan Yao

Su-Hwa Wang

Hui-Lung Hon

Cheng-Hsiung Liu

Mu-Chen Chen

Yi-Tse Huang

Jan-Mei Fan

A method of wafer processing includes supporting a wafer in a process chamber. The method further includes introducing a flow of a gaseous material through an inlet of the process chamber to process the wafer. The method further includes generating, between the inlet and the wafer, controllable forces acting in various directions on the gaseous material to spread the gaseous material inside the process chamber.

Wafer processing method

A wafer process chamber includes a wafer support in the wafer process chamber, the wafer support configured to support a wafer. The process chamber includes a gas diffuser unit within the wafer process chamber. The gas diffuser unit includes at least one controllable diffuser configured to generate one or more controllable forces acting in various directions on a gaseous material in a flow of the gaseous material introduced into the process chamber, to spread the gaseous material inside the process chamber. The gas diffuser unit includes a power source coupled to the at least one controllable diffuser, the power source configured to supply power to the at least one controllable diffuser to generate the one or more controllable forces. The gas diffuser unit includes a controller coupled to the power source, the controller configured to control the power supplied by the power source to the at least one controllable diffuser.

Process chamber and wafer processing method

One or more pumping liners are provided for use in chemical vapor deposition (CVD). A pumping liner encircles a deposition chamber within which a wafer is placed and into which a precursor is introduced to form a thin film on a surface of the wafer. The pumping liner regulates a rate and uniformity at which a gas is removed from the deposition chamber, which in turn affects a duration or degree to which different portions of the wafer are exposed to the precursor. Controlling exposure of the wafer to the precursor promotes uniformity of the film formed on the wafer as well an ability to regulate the thickness of the film formed on the wafer. In an embodiment, a pumping liner has at least one of relatively small liner apertures, an increased number of liner apertures or a non-uniform distribution of liner apertures within a body of the pumping liner.

Pumping liner for chemical vapor deposition

A gas diffuser unit for a process chamber includes at least one controllable diffuser, a power source, and a controller. The at least one controllable diffuser is configured to generate controllable forces acting in various directions on a gaseous material in a flow of the gaseous material introduced into the process chamber, to spread the gaseous material inside the process chamber. The power source is coupled to the at least one controllable diffuser, and configured to supply power to the at least one controllable diffuser to generate the controllable forces. The controller is coupled to the power source and configured to control the power supplied by the power source to the at least one controllable diffuser.

Gas diffuser unit, process chamber and wafer processing method

A method for removing photoresist residue includes etching a photoresist layer disposed over a front side of a semiconductor substrate during fabrication of a semiconductor device, and exposing at least one of the front side and the back side of the semiconductor substrate to an atmosphere comprising active oxygen. The method further includes cleaning at least one of the front side and the back side of the semiconductor substrate with a cleaning fluid.

Method and equipment for removing photoresist residue after dry etch

A first embodiment is a method for semiconductor processing. The method comprises forming a component on a wafer in a chamber; determining a non-uniformity of the plasma in the chamber, the determining being based at least in part on the component on the wafer; and providing a material on a surface of the chamber corresponding to the non-uniformity. The forming the component includes using a plasma. The material can have various shapes, compositions, thicknesses, and/or placements on the surface of the chamber. Other embodiments include a chamber having a material on a surface to control a plasma uniformity.

Plasma density control

A self-centering calibration tool for a wafer platform or a heater in a chemical vapor deposition chamber is disclosed. The self-centering calibration tool is constructed of a circular calibration disc that has at least one alignment mark on a top surface for aligning a robot arm, and a centering device mounted juxtaposed to a bottom surface of the disk. The centering device is detachably mounted to the calibration disk by a bolt threadingly engaging a center aperture in a calibration disk and a center aperture in the centering device. The centering device is constructed by at least three links, or legs extending radially outwardly from the center aperture equally spaced circumferentially from each other adapted for engaging an undercut groove provided in a raised edge of the wafer platform to effectuate a self-centering calibration. A method for calibrating the movement of a robot arm for loading a wafer onto a wafer platform or a heater is also disclosed.

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Hsinchu, Taiwan

Chia-I Shen