Other

Taiwan Semiconductor Manufacturing Comp. Ltd.

Mediatek Corporation

Macronix International Co., Ltd.

Micro-star Int'l Co., Limited.

Chia-Hua Lin

Yao-Wen Chang

Yuan-Tai Tseng

Hung Cho Wang

Sheng-Huang Huang

Chung-Chiang Min

Tzu-Chung Tsai

Tsung-Hsueh Yang

Harry-Hak-Lay Chuang

Cheng-Yuan Tsai

Chii-Ming M Wu

Hsun-Chung Kuang

Yu-Hsing Chang

Eugene I-Chun Chen

Chin-Cheng Yang

Ju-Ya Chen

Xiu-Sheng Li

Yen-Chang Chu

Chih-Hao Huang

Guo-Hau Gau

In some embodiments, the present disclosure relates to a display device that includes a reflector electrode coupled to an interconnect structure. An isolation structure is disposed over the reflector electrode, and a transparent electrode is disposed over the isolation structure. Further, an optical emitter structure is disposed over the transparent electrode. A via structure extends from a top surface of the isolation structure to the reflector electrode and comprises an outer portion that directly overlies the top surface of the isolation structure. A hard mask layer is arranged directly between the top surface of the isolation structure and the outer portion of the via structure.

Hard mask layer below via structure in display device

A semiconductor structure includes a bottom electrode, a magnetic tunneling junction stack over the bottom electrode, a top electrode over the magnetic tunneling junction stack, a first dielectric layer under the bottom electrode, a second dielectric layer under the first dielectric layer. The first dielectric layer has a first chemical bond energy and the second dielectric layer has a second chemical bond energy less than the first chemical bond energy.

Semiconductor structure and method of manufacture

Various embodiments of the present disclosure are directed towards an integrated chip comprising a memory cell. The memory cell is disposed within a dielectric structure that overlies a substrate. The memory cell comprises a data storage structure disposed between a bottom electrode and a top electrode. An upper conductive structure is disposed in the dielectric structure and on the top electrode. The upper conductive structure comprises a protrusion disposed below an upper surface of the top electrode. A sidewall spacer structure is disposed around the memory cell. The sidewall spacer structure comprises a first sidewall spacer layer around the data storage structure and a second sidewall spacer layer abutting the first sidewall spacer layer. The protrusion contacts the second sidewall spacer layer.

Sidewall spacer structure for memory cell

Socket for extension cord

Various embodiments of the present disclosure are directed towards a method for forming an integrated chip. The method includes forming a memory cell stack over a substrate. The memory cell stack includes a top electrode. A sidewall spacer structure is formed around the memory cell stack. The sidewall spacer structure includes a first sidewall spacer layer, a second sidewall spacer layer, and a protective sidewall spacer layer sandwiched between the first and second sidewall spacer layers. A dielectric structure is formed over the sidewall spacer structure. A first etch process is performed on the dielectric structure and the second sidewall spacer layer to define an opening above the top electrode. The second sidewall spacer layer and the dielectric structure are etched at a higher rate than the protective sidewall spacer layer during the first etch process. A top electrode via is formed within the opening.

A method for manufacturing reflective structure is provided. The method includes the operations as follows. A metallization structure is received. A plurality of conductive pads are formed over the metallization structure. A plurality of dielectric stacks are formed over the conductive pads, respectively, wherein the thicknesses of the dielectric stacks are different. The dielectric stacks are isolated by forming a plurality of trenches over a plurality of intervals between each two adjacent dielectric stacks.

Method for manufacturing reflective structure

Multi-direction socket

A safety socket is disclosed, comprising a socket body, an outer mold sleeve, a torsion rotating spring and a protective block body, and when any foreign object may be potentially inserted into the socket body, the foreign object will be effectively blocked by the protective block body such that it cannot smoothly enter therein, thus achieving the feature of safety protection.

Safety socket

A semiconductor structure is provided. The semiconductor structure includes metallization structure, a plurality of conductive pads, and a dielectric layer. The plurality of conductive pads is over the metallization structure. The dielectric layer is on the metallization structure and covers the conductive pad. The dielectric layer includes a first dielectric film, a second dielectric film, and a third dielectric film. The first dielectric film is on the conductive pad. The second dielectric film is on the first dielectric film. The third dielectric film is on the second dielectric film. The a refractive index of the first dielectric film is smaller than a refractive index of the second dielectric film, and the refractive index of the second dielectric film is smaller than a refractive index of the third dielectric film.

Semiconductor structure

Growing community of inventors

Taipei, Taiwan

Chia-Hua Lin