Honeywell International Inc.

Johnson Matthey Electronics, Inc.

Chi Tse Wu

Janine K Kardokus

Jane E Buehler

Christopher L Parfeniuk

Stephane Ferrasse

Susan D Strothers

Wuwen Yi

Vladimir M Segal

Frank C Alford

Jaeyeon Kim

Ritesh P Shah

William B Willett

Diana L Morales

Werner Hort

Robert Prater

Frank A Alford

Susanne Grabmeier

Andrew Wragg

Jeff A Keller

The invention includes a copper-comprising sputtering target. The target is monolithic or bonded and contains at least 99.99% copper by weight and has an average grain size of from 1 micron to 50 microns. The copper-comprising target has a yield strength of greater than or equal to about 15 ksi and a Brinell hardness (HB) of greater than about 40. The invention includes copper alloy monolithic and bonded sputtering targets consisting essentially of less than or equal to about 99.99% copper by weight and a total amount of alloying element(s) of at least 100 ppm and less than 10% by weight. The targets have an average grain size of from less than 1 micron to 50 microns and have a grain size non-uniformity of less than about 15% standard deviation (1-sigma) throughout the target. The invention additionally includes methods of producing bonded and monolithic copper and copper alloy targets.

Copper sputtering targets and methods of forming copper sputtering targets

The invention includes a target construction having a sputtering region and a flange region laterally outward relative to the sputtering region. The flange region has a front surface disposed on a front face of the construction and a back surface opposing the front surface. An o-ring groove is disposed within the flange region. The o-ring groove has a planar base surface which has a first width and has an orifice disposed along the front surface of the flange. The orifice has a second width as measured parallel relative to the base surface. The second width is greater than the first width. The flange surfaces can additionally be protected from rubbing by a layer of protective material.

Physical vapor deposition target constructions

The invention includes a sputtering target containing copper of a purity of at least about 99.999 wt. %, and at least one component selected from the group consisting of Ag, Sn, Te, In, B, Bi, Sb, and P dispersed within the copper. The total of Ag, Sn, Te, In, B, Bi, Sb, and P within the copper is from at least 0.3 ppm to about 10 ppm. The sputtering target has a substantially uniform grain size of less than or equal to about 50 micrometers throughout the copper and the at least one component.

Copper-containing sputtering targets, and methods of forming copper-containing sputtering targets

The invention includes a method of forming a sputtering target containing copper of a purity of at least about 99.999 wt. %, and at least one component selected from the group consisting of Ag, Sn, Te, In, B, Bi, Sb, and P dispersed within the copper. The total of Ag, Sn, Te, In, B, Bi, Sb, and P within the copper is from at least 0.3 ppm to about 10 ppm. The sputtering target has a substantially uniform grain size of less than or equal to about 50 micrometers throughout the copper and the at least one component.

Methods of forming copper-containing sputtering targets

The invention includes a non-magnetic physical vapor deposition target. The target has at least 30 atom percent total of one or more of Co, Ni, Ta, Ti, Pt, Mo and W, and at least 10 atom percent silicon. The target also has one phase and not more than 1% of any additional phases other than said one phase. In another aspect, the invention includes a non-magnetic physical vapor deposition target consisting essentially of Co and/or Ni, silicon, and one phase.

Physical vapor deposition targets

Described is a sputtering target assembly of high purity copper diffusion bonded to a precipitation hardened aluminum alloy backing plate via an intermediate layer of a CuCr alloy and in which the copper contains a micro alloy addition of at least one of Ag, Su, Te, In, Mg, B, Bi, Sb and/or P. Also disclosed is a method that includes preparation of a master alloy for addition to high purity copper and fabricating, heat treating and diffusion bonding processes to produce a sputtering target assembly with a stable fine-grained target microstructure.

Copper sputtering target assembly and method of making same

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Veradale, WA, United States of America

Chi Tse Wu