Taiwan Semiconductor Manufacturing Comp. Ltd.

Chi-Shen Lo

Pey-Yuan Lee

Yi-Hung Chen

Chih-Heng Shen

Wei-Ming You

Chia-Hsiang Chen

Han-Liang Tseng

Hsien-Wen Chang

Chao-Hsin Chang

Feng-Liang Lai

Wen-Chung Lee

Cheng-Kuo Chu

Hong-Ji Yang

Chen-Ning Fuh

Sian-Ren Horng

Kuan-Chi Huang

A method of manufacturing a microelectronic device, including performing a first inspection of a device feature during an intermediate stage of manufacture, cleaning the device feature after the first inspection, and performing a second inspection of the device feature after cleaning the device feature.

Manufacturing method for microelectronic device

A method for calibrating a linewidth measurement tool and a system for calibrating the linewidth measurement tool each employ a correction of a series of periodic actual measurements of at least one single measurement location of a topographic feature within a linewidth standard with an exponentially weighted moving average of a series of deviations of the series of periodic actual measurements from a corresponding series of regressed data points derived from mathematical regression of the series of periodic actual measurements. Such a correction provides for a more accurate calibration of the linewidth measurement tool and a more accurate measurement of linewidths within microelectronic products while employing the calibrated linewidth measurement tool.

Linewidth measurement tool calibration method employing linewidth standard

A method for measuring a dielectric layer thickness calibration reference standard including providing a substrate having a dielectric layer for calibrating a dielectric layer thickness measuring tool; cleaning the dielectric layer according to a cleaning process including at least one of spraying and scrubbing; and, measuring the thickness of the dielectric layer with the dielectric layer thickness measuring tool including at least one portion of the dielectric layer displaced from the substrate center.

Method for improved dielectric layer metrology calibration

The present invention provides a method for removing a coating layer of SOG or photoresist from a wafer flat side on a wafer by first injecting a flow of a cleaning solution at the bottom surface of the wafer at a location adjacent to the edge of the wafer, and then rotating the wafer at a rotational speed sufficiently high so as to cause the cleaning solution being pulled from the bottom side to the top side of the wafer by flowing around the edge to remove the coating layer covering the unintended area on the top surface of the wafer.

Method for removing coating bead at wafer flat edge

A simple, non critical, low cost process step is added to the manufacture of integrated circuit wafers to remove a ridge of dielectric material remaining at the flat edge of the wafer after an edge rinse has removed the ridge of dielectric from the circular edges of the wafer. A layer of dielectric, such as Spin-On-Glass or the like, is formed on the wafer. An edge rinse is then used to remove the ridge of dielectric formed at the wafer edge, however the edge rinse does not remove the ridge of dielectric at the flat edge of the wafer. A layer of photoresist is formed on the wafer, selectively exposed, and developed to form a photoresist mask. The flat edge of the wafer is then dipped in buffered oxide etch to remove the dielectric material at the flat edge of the wafer. The photoresist mask is then stripped and processing of the wafer is continued. Damage to dielectric material at the flat edge of the wafer, which can cause particles to flake off and become a source of defects in subsequent process steps, in thereby avoided.

Process to avoid dielectric damage at the flat edge of the water

Growing community of inventors

Tainan, Taiwan

Chi-Shen Lo